{"title":"用于CD和DVD应用的标准CMOS技术集成光电二极管","authors":"S. Radovanovic, A. Anuema, B. Nauta","doi":"10.1109/ICMEL.2004.1314632","DOIUrl":null,"url":null,"abstract":"The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Integrated photodiodes in standard CMOS technology for CD and DVD applications\",\"authors\":\"S. Radovanovic, A. Anuema, B. Nauta\",\"doi\":\"10.1109/ICMEL.2004.1314632\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.\",\"PeriodicalId\":202761,\"journal\":{\"name\":\"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2004.1314632\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2004.1314632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated photodiodes in standard CMOS technology for CD and DVD applications
The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for /spl lambda/=780 nm and /spl lambda/=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.
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