Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode

Abstract

Low-temperature diffusion (700 - 725/spl deg/C) of platinum from platinum silicide and implanted layer of platinum (1 MeV) at the anode side of power P-i-N silicon diode were used for local lifetime control. PtSi allows Much higher maximal reduction of excess carrier lifetime than that of implanted platinum (due to the defects from platinum implantation), but still much lower than the standard helium irradiation.