{"title":"FIESTA-EXTRA: cell-oriented software for the defect/fault analysis in VLSI circuits","authors":"A. Blyzniuk, I. Kazymyra","doi":"10.1109/ICMEL.2004.1314953","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314953","url":null,"abstract":"The main concepts which laid the foundation for the special software development are considered. This software tool is named FIESTA-EXTRA (Faults Identification and EStimation of TestAbility by EXTRAction of faults probabilities, kinds of faults and usefulness of test patterns for faults detection) and is developed for defect/fault analysis in the complex gates from industrial cell library. Specific features of the main three extractors of the developed software are considered. The results of the FIESTA-ExTRA approbation are described.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Shift register based TPG for at-speed interconnect BIST","authors":"A. Jutman","doi":"10.1109/ICMEL.2004.1314941","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314941","url":null,"abstract":"This article describes a novel approach to test pattern generation for at-speed interconnect built-in self-test. The novelty consists in both the original test sequence detecting opens, shorts and delays and the original design of the test pattern generator. The main idea is based on using a circular shift register and its proper initialization. Compared to other known techniques, Current approach provides the minimal hardware cost at the shortest test application time.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"567 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116290515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CMOS analog design for wireless communication","authors":"V. Liberali, G. Trucco","doi":"10.1109/ICMEL.2004.1314882","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314882","url":null,"abstract":"This paper presents an overview of new problems arising from the ever and ever ubiquitous wireless communication systems. Low cost and high flexibility will be required for future generations of portable terminals; for these reasons, the market share of CMOS technology is expected to grow quickly. Typical architectures of integrated portable transceivers are described, and solutions in CMOS technology are illustrated, outlining their advantages and drawbacks.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126250270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Feasibility study of low-swing clocking","authors":"Dejan Markovic, J. Tschanz, Vivek De","doi":"10.1109/ICMEL.2004.1314884","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314884","url":null,"abstract":"This paper evaluates the feasibility of low-swing clocking under no performance degradation constraint. We consider flip-flops, logic and clock distribution network in our analysis. The preferred flip-flop topologies for low-swing clocking (low-V/sub Clk/) are different from those normally used in a full-swing (high-V/sub Clk/) design. Clock buffers are redesigned to accommodate reduced drive current under low-V/sub Clk/. In order to maintain performance, logic and flip-flops must absorb increase in clock skew due to low-V/sub Clk/. In a 64-bit ALU design, the optimal low-V/sub Clk/ design point is at the minimum energy-delay product (EDP) point of the high-V/sub Clk/ design, with no delay or energy penalty in the ALU itself. A 43% energy reduction achieved in the clock distribution network results in a 13% overall energy savings due to low-V/sub Clk/, assuming that the clocking energy is 40% of the total energy tinder high-V/sub Clk/. For performance targets of at least one FO4 inverter delay better than the min-EDP point, low-swing clocking becomes ineffective because of a high energy cost in logic that is spent to absorb increase in flip-flop delay and clock skew. Finally, low-V/sub Clk/ cannot achieve the peak performance of the high-V/sub Clk/ design due to slower flip-flops and higher clock uncertainty at low-V/sub Clk/.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127608413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Radioactive resistance of some commercial memory components","authors":"B. Loncar, S. Stankovic, P. Osmokrović","doi":"10.1109/ICMEL.2004.1314928","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314928","url":null,"abstract":"The goal of this paper is to examine and investigate comparative analysis the resistance of some commercial EPROM and EEPROM components under the influence of gamma radiation. Experimental results show that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM changes are reversible and after erasing process and reprogramming all EPROM components are functional. On the other hand EEPROM changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. These results are considered relevant for the use of these components in both military industry and space technology. The obtained results are analyzed and explained theoretically.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129168042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A case study of SPC in circuit board assembly: statistical mounting process control","authors":"T. Liukkonen, A. Tuominen","doi":"10.1109/ICMEL.2004.1314857","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314857","url":null,"abstract":"A system was developed to continuously monitor the cycle times of successive placement machines in a long high-speed surface mount line. Statistical process control software was created to generate predefined out-of-control alarms when an unexpected change is monitored in the cycle times. The developed Statistical Mounting Process Control application was divided into three monitoring levels: line performance view, machine performance view, and pickup performance view (i.e, component feeders and nozzles). Most of the problems causing unexpected increase in placement cycle time are directly related to bad performing feeders or nozzles. The data transfer between the machines and host computer system is described. Out-of-control criterias selected for this statistical process control application are discussed in detail. One typical out-of-control situation is described for fast action and response to get the placement - process back to right track again. Promising results were observed after several weeks of evaluation of the system in two production lines: component pickup errors were decreased about 50%. In the future this is expected to have a direct positive impact on the output of the factory as well as on the total material cost and unexpected shortages, because component waste is simultaneously decreased. A theory is also discussed about poor pick-up performance having possible negative effect on the placement accuracy.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117033539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Bojanic, G. Caffarena, C. Pedreira, O. Nieto-Taladriz
{"title":"High speed circuits for genetics applications","authors":"S. Bojanic, G. Caffarena, C. Pedreira, O. Nieto-Taladriz","doi":"10.1109/ICMEL.2004.1314878","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314878","url":null,"abstract":"The amount of biological information is exponentially increasing, and is exceeding the rate at which computer software can facilitate making sense of the data. Our intention is to enable the use of sensitive algorithms in computational biology exploiting in hardware the inherent parallelism that dynamic programming offers. In this work besides the general research methodology and the objectives related to this task, we present our architecture for particular problem of DNA and protein sequence alignment The results clearly outperform those published in the literature.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128318155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Hatzopoulos, C. Dimitriadis, G. Pananakakis, G. Ghibaudo, G. Kamarinos
{"title":"Hot-carrier induced degradation of offset gated polysilicon TFTs","authors":"A. Hatzopoulos, C. Dimitriadis, G. Pananakakis, G. Ghibaudo, G. Kamarinos","doi":"10.1109/ICMEL.2004.1314925","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314925","url":null,"abstract":"Hot-carrier effects are investigated in offset gated polysilicon thin-film transistors of channel length L = 10 /spl mu/m and offset length /spl Delta/L = 0.5 and 1 /spl mu/m, and compared with those of self-aligned devices. The gate and drain bias conditions for maximum device degradation were determined from substrate current measurements. In offset gated devices, the experimental data show that the threshold voltage and the on-state current degrade exhibiting a \"staircase-like\" behavior with stress time. The results are explained in terms of grain boundary trap filling, with electrons generated by impact ionization in successive small offset regions from the drain end.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128608343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Rijks, J. V. van Beek, P. Steeneken, M. Ulenaers, P. van Eerd, J. den Toonder, A. van Dijken, J. de Coster, R. Puers, J. Weekamp, J. Scheer, A. Jourdain, H. Tilmans
{"title":"MEMS tunable capacitors and switches for RF applications","authors":"T. Rijks, J. V. van Beek, P. Steeneken, M. Ulenaers, P. van Eerd, J. den Toonder, A. van Dijken, J. de Coster, R. Puers, J. Weekamp, J. Scheer, A. Jourdain, H. Tilmans","doi":"10.1109/ICMEL.2004.1314557","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314557","url":null,"abstract":"RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132261313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Saha, S. Chattopadhyay, G. Dalapati, S. Nandi, C. K. Maiti
{"title":"Electrical characterization of Ni/sub y/(Si/sub 1-x/Ge/sub x/)/sub 1-y//Si/sub 1-x/Ge/sub x/ and NiSi/Si Schottky diodes","authors":"A. Saha, S. Chattopadhyay, G. Dalapati, S. Nandi, C. K. Maiti","doi":"10.1109/ICMEL.2004.1314651","DOIUrl":"https://doi.org/10.1109/ICMEL.2004.1314651","url":null,"abstract":"A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si/sub 1-x/Ge/sub x/ buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134122136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}