发布求助
文献互助 智能选刊 最新文献

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

筛选
英文 中文
Study of thin film solar cell with metal-Insulator-semiconductor diode to control carrier recombination 金属-绝缘体-半导体二极管控制载流子复合的薄膜太阳能电池研究
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867055
Shota Wakamiya, N. Matsuo, Takahiro Kobayashi, A. Heya
{"title":"Study of thin film solar cell with metal-Insulator-semiconductor diode to control carrier recombination","authors":"Shota Wakamiya, N. Matsuo, Takahiro Kobayashi, A. Heya","doi":"10.1109/IMFEDK.2014.6867055","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867055","url":null,"abstract":"We presented the novel structure of the solar cell that has the metal-Insulator-semiconductor (MIS) diode at the side wall of the electricity generation layer. It is found that the gate voltage is effective to improve the conversion efficiency of the solar cell with large surface recombination velocities.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128812604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Postgrowth annealing effects on structural, optical, and electrical properties of β-MoO3 films grown by molecular beam epitaxy 生长后退火对分子束外延生长β-MoO3薄膜结构、光学和电学性能的影响
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867068
S. Yagi, Masayuki Matsuo, K. Koike, Y. Harada, S. Sasa, M. Yano
{"title":"Postgrowth annealing effects on structural, optical, and electrical properties of β-MoO3 films grown by molecular beam epitaxy","authors":"S. Yagi, Masayuki Matsuo, K. Koike, Y. Harada, S. Sasa, M. Yano","doi":"10.1109/IMFEDK.2014.6867068","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867068","url":null,"abstract":"We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO3 film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO3-x domains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126585820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of the conduction mechanism of the DNA memory FET DNA记忆场效应晶体管传导机制的研究
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867051
Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama
{"title":"Study of the conduction mechanism of the DNA memory FET","authors":"Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama","doi":"10.1109/IMFEDK.2014.6867051","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867051","url":null,"abstract":"The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122002624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Body channel digital pulse transmission for biometric measurement by fully implantable CMOS image sensor 身体通道数字脉冲传输的生物特征测量全植入式CMOS图像传感器
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867046
H. Hayami, Y. Ishii, K. Sasagawa, T. Noda, T. Tokuda, J. Ohta
{"title":"Body channel digital pulse transmission for biometric measurement by fully implantable CMOS image sensor","authors":"H. Hayami, Y. Ishii, K. Sasagawa, T. Noda, T. Tokuda, J. Ohta","doi":"10.1109/IMFEDK.2014.6867046","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867046","url":null,"abstract":"We have developed a prototype of battery-powered implantable image sensor unit and successfully demonstrated its operation in phosphate buffered saline (PBS) solution as simulant body solution. We have also proposed its equivalent circuit model for circuit simulation. The transmitted signal waveforms are in good agreement with the simulation result by using the model. The images taken by the implantable image sensor has been recovered from the signal received outside PBS solution.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131343843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment 自组装单层修饰的ga掺杂ZnO电极聚合物光电探测器的特性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867080
Yi-Wei Liao, Yusuke Sato, H. Kajii, Y. Ohmori
{"title":"Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment","authors":"Yi-Wei Liao, Yusuke Sato, H. Kajii, Y. Ohmori","doi":"10.1109/IMFEDK.2014.6867080","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867080","url":null,"abstract":"The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"526 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131360846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells 退火对混合串联太阳能电池GaAs/Si键合界面的影响
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867079
L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa
{"title":"Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells","authors":"L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa","doi":"10.1109/IMFEDK.2014.6867079","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867079","url":null,"abstract":"Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400°C. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114944689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method MOD法制备BaTiO3铁电薄膜的电阻滞后
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867072
S. Hashimoto, Shinpei Fuchida, Syu Ou, K. Yamashita, M. Noda
{"title":"Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method","authors":"S. Hashimoto, Shinpei Fuchida, Syu Ou, K. Yamashita, M. Noda","doi":"10.1109/IMFEDK.2014.6867072","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867072","url":null,"abstract":"An MOD-made BaTiO3 (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134452162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of off-leakage current in InGaZnO thin-film transistors InGaZnO薄膜晶体管断漏电流机理研究
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867062
G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura
{"title":"Mechanism of off-leakage current in InGaZnO thin-film transistors","authors":"G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura","doi":"10.1109/IMFEDK.2014.6867062","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867062","url":null,"abstract":"We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133872808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing 用退火方法改善sb基n+-Si/n- 4h - sic结的电学性能
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867070
T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai
{"title":"Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing","authors":"T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai","doi":"10.1109/IMFEDK.2014.6867070","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867070","url":null,"abstract":"The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122091415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conduction-type dependence of thermal oxidation rate on SiC(0001) 热氧化速率对SiC的传导型依赖性(0001)
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867060
Takuma Kobayashi, J. Suda, T. Kimoto
{"title":"Conduction-type dependence of thermal oxidation rate on SiC(0001)","authors":"Takuma Kobayashi, J. Suda, T. Kimoto","doi":"10.1109/IMFEDK.2014.6867060","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867060","url":null,"abstract":"The conduction-type dependent thermal oxidation rate in SiC was discovered. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2.0×10<sup>16</sup> cm<sup>-3</sup> to 1.0×10<sup>19</sup> cm<sup>-3</sup>, and aluminum doping (p-type) in the range from 2.0×10<sup>15</sup> cm<sup>-3</sup> to 1.0×10<sup>19</sup> cm<sup>-3</sup>, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC. The authors speculate the difference originates from the difference in carrier (electron/hole) density during the oxidation, which can reasonably explain the difference in the oxidation rate between Si and SiC.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130420680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信