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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding 表面活化键合制备和表征Si/ ~ 10-μm表面蚀刻Si结
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867078
K. Takemura, M. Morimoto, S. Nishida, J. Liang, N. Shigekawa
{"title":"Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding","authors":"K. Takemura, M. Morimoto, S. Nishida, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2014.6867078","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867078","url":null,"abstract":"Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of millimeter-wave CMOS transmission-line-to-waveguide transitions 毫米波CMOS传输线到波导转换的设计
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867081
H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"Design of millimeter-wave CMOS transmission-line-to-waveguide transitions","authors":"H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/IMFEDK.2014.6867081","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867081","url":null,"abstract":"A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126380062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristics of a microbridge type MEMS sensor for the thermal conductivity measurement of gases by a steady state method 用稳态法测量气体热导率的微桥式MEMS传感器的特性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867052
K. Fujii, S. Muraoka, S. Omatu, M. Yano
{"title":"Characteristics of a microbridge type MEMS sensor for the thermal conductivity measurement of gases by a steady state method","authors":"K. Fujii, S. Muraoka, S. Omatu, M. Yano","doi":"10.1109/IMFEDK.2014.6867052","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867052","url":null,"abstract":"Thermal conductivity λ of gases was successfully measured by a simple steady state method using a microbridge type MEMS sensor fabricated on a Si substrate. The sensor consisted of a hot wire with two adjacent thermocouples on the surface of a SiO2 microbridge. The temperature increase of the microbridge was measured by supplying step-like electrical power Q to the hot wire. Due to the small heat capacity of the microbridge, the temperature increased to a saturated value ΔT within several tens of millisecond. In moving gas, the difference of the ΔT between upstream and downstream thermocouples gives the flow velocity. In static gas, this difference intrinsically becomes zero, and the heat flow QG from the hot wire to the surrounding gas is calculated using the Q to yield the same ΔT for different gases with known λ. Once QG is obtained, the λ of any unknown gases can be estimated by measuring the Q to yield the same ΔT.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116006358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer 硅氧烷钝化层下栅非晶InGaZnO薄膜晶体管的可靠性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867088
Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka
{"title":"Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer","authors":"Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867088","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867088","url":null,"abstract":"We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127035640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise performance of an implantable self-reset CMOS image sensor 一种可植入自复位CMOS图像传感器的噪声性能
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867073
Takahiro Yamaguchi, Yoshinori Sunaga, M. Haruta, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta
{"title":"Noise performance of an implantable self-reset CMOS image sensor","authors":"Takahiro Yamaguchi, Yoshinori Sunaga, M. Haruta, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta","doi":"10.1109/IMFEDK.2014.6867073","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867073","url":null,"abstract":"We developed and evaluated a miniaturized CMOS image sensor with self-reset function in order to improve signal-to-noise ratio (SNR) of an implantable imaging device. The sensor is capable to image under high intensity illumination where the peak SNR determined by the shot-noise is increased. The pixel size is 15-μm square, which is as small as neural cells and acceptable for implantable image sensor. With illumination of 1.7 × 10-3 W/cm2, and a frame rate of approximately 230 fps, SNR over 60 dB was achieved.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114129746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding carrier transport in the ultimate physical scaling limit of MOSFETs 理解载流子输运在mosfet的最终物理缩放极限
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867045
H. Tsuchiya
{"title":"Understanding carrier transport in the ultimate physical scaling limit of MOSFETs","authors":"H. Tsuchiya","doi":"10.1109/IMFEDK.2014.6867045","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867045","url":null,"abstract":"We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114773130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Original amplifier using only emitter and base of a Si bipolar transistor 原始放大器只使用发射极和硅双极晶体管的基极
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867048
K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori
{"title":"Original amplifier using only emitter and base of a Si bipolar transistor","authors":"K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori","doi":"10.1109/IMFEDK.2014.6867048","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867048","url":null,"abstract":"We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123363587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress 脉冲电压应力下氧化薄膜晶体管加热现象分析
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867089
Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka
{"title":"Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress","authors":"Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867089","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867089","url":null,"abstract":"Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129155040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy 表面重建控制外延生长n+-InSb/p-Si异质结的电学特性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867066
K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, K. Maezawa
{"title":"Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy","authors":"K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2014.6867066","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867066","url":null,"abstract":"This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and capacitance-voltage measurements. The conduction and valence band discontinuities were estimated from these results, and they were discussed compared to those obtained from the electron affinity rule.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"194 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130053199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature 室温下采用导电AZO薄膜制备的全透明ZnO薄膜晶体管
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867064
Y. Sun, T. Maemoto, S. Sasa
{"title":"Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature","authors":"Y. Sun, T. Maemoto, S. Sasa","doi":"10.1109/IMFEDK.2014.6867064","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867064","url":null,"abstract":"We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128557619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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