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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Germanium diode modeling for sound effect circuit design 声效电路设计中的锗二极管建模
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867059
Hirokazu Oda, A. Hiroki, Takaaki Sano, Takaya Oyama
{"title":"Germanium diode modeling for sound effect circuit design","authors":"Hirokazu Oda, A. Hiroki, Takaaki Sano, Takaya Oyama","doi":"10.1109/IMFEDK.2014.6867059","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867059","url":null,"abstract":"This paper describes a germanium diode model for sound effect circuit design. The parameters of the diode model have been investigated by comparing with experimental data. In lower voltage regions, the parameters of the SPICE library have been compared with experimental current voltage characteristics. A diode model with accurate parameters has been proposed. The diode model has been implemented into a circuit simulator. Output waveforms of a distortion circuit have been investigated by comparing with experimental data. It is found that the modeling of the diode in low voltage region is essential in simulating for the distortion circuits.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125078554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Macromodeling of operational amplifiers for sound effect circuit design 运放声效电路设计的宏建模
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867058
Takaya Oyama, A. Hiroki, Takaaki Sano
{"title":"Macromodeling of operational amplifiers for sound effect circuit design","authors":"Takaya Oyama, A. Hiroki, Takaaki Sano","doi":"10.1109/IMFEDK.2014.6867058","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867058","url":null,"abstract":"This paper describes a macromodeling of operational amplifiers for sound effect circuit design. The modular macromodel of operational amplifiers has been investigated for distortion circuits. The macromodel includes the voltage limiting stage with accurate power supply voltages. The macromodel has been implemented in a circuit simulator and the output voltages are compared with experimental data for a distortion circuit. It is found that the modeling of operational amplifiers with accurate power supply voltages is essential in simulating the output wave.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125855999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multiple-input NAND cirucit using polycrystalline silicon thin-film transistors and set-reset flip-flop circuit using the NAND circuits 使用多晶硅薄膜晶体管的多输入NAND电路和使用NAND电路的设置复位触发器电路
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867075
Y. Nagase, T. Matsuda, M. Kimura, Taketoshi Matsumoto, H. Kobayashi
{"title":"Multiple-input NAND cirucit using polycrystalline silicon thin-film transistors and set-reset flip-flop circuit using the NAND circuits","authors":"Y. Nagase, T. Matsuda, M. Kimura, Taketoshi Matsumoto, H. Kobayashi","doi":"10.1109/IMFEDK.2014.6867075","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867075","url":null,"abstract":"We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the output pulse became degraded for the 3-input NAND circuit. Moreover, we have fabricated a set-reset flip-flop (SR-FF) circuit using the 2-input NAND circuits and confirmed that the SR-FF circuit operated correctly.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128244940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Output voltage stability of SPMC Type AC-AC converter for power management in IT system IT系统电源管理用SPMC型交流变换器的输出电压稳定性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867096
Hiroaki Ohtsuka, M. Muraguchi, Yitao Ma, T. Endoh
{"title":"Output voltage stability of SPMC Type AC-AC converter for power management in IT system","authors":"Hiroaki Ohtsuka, M. Muraguchi, Yitao Ma, T. Endoh","doi":"10.1109/IMFEDK.2014.6867096","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867096","url":null,"abstract":"This paper focuses on the analyses of output stability of Single-Phase-Matrix-Converter (SPMC) type AC-AC converter for power management in the IT system. The SPMC employing power MOS devices is studied to contribute to the efficiency improvement and stabilization of AC-DC power supply circuit in IT systems. In detail, the output voltage dependency of SPMC is evaluated with triangular wave control signal with the amplitude range from 5V to 20V and the frequency range from 1kHz to 2MHz.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128484713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Correlation between BTI-induced degradations and process variations by measuring frequency of ROs 通过测量活性氧的频率，bti诱导的降解与过程变化之间的相关性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867095
M. Yabuuchi, Ryo Kishida, Kazutoshi Kobayashi
{"title":"Correlation between BTI-induced degradations and process variations by measuring frequency of ROs","authors":"M. Yabuuchi, Ryo Kishida, Kazutoshi Kobayashi","doi":"10.1109/IMFEDK.2014.6867095","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867095","url":null,"abstract":"We analyze the correlation between BTI (Bias Temperature Instability)-induced degradations and process variations. BTI shows a strong effect on highly scaled LSIs in the same way as the process variations. It is necessary to predict the combinational effects. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure initial frequencies and the aging-degradations of ROs (ring oscillators) of 65-nm process test circuits. The initial frequencies of ROs follow gaussian distributions. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition of the variations has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can reduce the design margin for BTI-induced degradations because the degradation at the “slow” conditon on the variations is smaller than the average.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Maximum and minimum voltage sample and hold circuits employing operational amplifiers composed of polycrystalline silicon thin-film transistors 采用由多晶硅薄膜晶体管组成的运算放大器的最大和最小电压采样和保持电路
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867076
Y. Ohno, Yoshihiro Ito, Y. Nagase, Akito Yoshikawa, T. Matsuda, M. Kimura
{"title":"Maximum and minimum voltage sample and hold circuits employing operational amplifiers composed of polycrystalline silicon thin-film transistors","authors":"Y. Ohno, Yoshihiro Ito, Y. Nagase, Akito Yoshikawa, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2014.6867076","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867076","url":null,"abstract":"We have developed maximum and minimum voltage sample and hold circuits employing operational amplifiers (OPAMPs) composed of polycrystalline silicon (poly-Si) thin-film transistors (TFTs). It was confirmed that the maximum and minimum voltages are successfully sampled and held. It was also confirmed that the restoring ratio has a peak near a certain value of the operation frequency. We would like you to propose novel applications using these circuits.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132882772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Micro systems for sustainable society 可持续社会的微系统
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867043
M. Esashi
{"title":"Micro systems for sustainable society","authors":"M. Esashi","doi":"10.1109/IMFEDK.2014.6867043","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867043","url":null,"abstract":"Wafer level adhesive bonding has been applied for the fabrication of micro systems which have heterogeneous components on LSI. Devices formed on a carrier wafer are transferred on a LSI wafer, which makes versatile heterogeneous integration possible. This has been applied to resonator, piezoelectric switch, tactile sensor, electron source and other value-added devices.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133668928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectroscopic electrical characterization of post-resistive-transition SiO2 films 后电阻跃迁SiO2薄膜的光谱电学特性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867074
R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura
{"title":"Spectroscopic electrical characterization of post-resistive-transition SiO2 films","authors":"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura","doi":"10.1109/IMFEDK.2014.6867074","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867074","url":null,"abstract":"This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116798369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Estimation of threshold voltage from frequency of ring oscillator 从环形振荡器的频率估计阈值电压
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867084
Takuya Matsumoto, H. Makino, T. Yoshimura, S. Iwade, Y. Matsuda
{"title":"Estimation of threshold voltage from frequency of ring oscillator","authors":"Takuya Matsumoto, H. Makino, T. Yoshimura, S. Iwade, Y. Matsuda","doi":"10.1109/IMFEDK.2014.6867084","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867084","url":null,"abstract":"This paper proposes the estimation method of the threshold voltage (Vth) of the transistor from the frequency of the ring oscillator (RO) without analog measurement. Two distributions of delays, in which the contour lines are nearly orthogonal with each other, are derived from the measured frequencies of three kinds of ROs. The Vth can easily be calculated from the two distributions by fitting to the quadratic function and using the `goal-seek' function of Excel. The accuracy of the calculated Vth is evaluated for various conditions. By optimizing the condition and dividing the fitting range, the error decreases down to 5mv which is sufficient for an accurate estimation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124803038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices P离子注入对金属源极/漏极Ge CMOS器件中nge /Ge结肖特基势垒高度的降低
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867050
H. Oka, Y. Minoura, T. Hosoi, T. Shimura, Heiji Watanabe
{"title":"Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices","authors":"H. Oka, Y. Minoura, T. Hosoi, T. Shimura, Heiji Watanabe","doi":"10.1109/IMFEDK.2014.6867050","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867050","url":null,"abstract":"We have demonstrated effective electron Schottky barrier height (eSBH) reduction of NiGe/Ge contacts using phosphorus ion implantation after germanidation. The eSBH was drastically reduced from 0.62 eV to 0.09 eV under optimum implantation and subsequent annealing conditions. Moreover, systematic studies of NiGe/Ge contacts with various P ion profiles indicated the variation in the eSBH at NiGe/Ge interface. This method allows us to design and control junction characteristics for future Ge-based devices.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129317850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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