毫米波CMOS传输线到波导转换的设计

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867081

H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima

{"title":"毫米波CMOS传输线到波导转换的设计","authors":"H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/IMFEDK.2014.6867081","DOIUrl":null,"url":null,"abstract":"A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of millimeter-wave CMOS transmission-line-to-waveguide transitions\",\"authors\":\"H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima\",\"doi\":\"10.1109/IMFEDK.2014.6867081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用电磁场模拟器设计了一种带贴片天线的WR3波导(220 ~ 325 GHz) CMOS传输线波导转换电路。优化了天线插入波导的位置和天线的尺寸，实现了低插入损耗和宽带宽。因此，实现了0.9 dB的插入损耗和120GHz的3db带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of millimeter-wave CMOS transmission-line-to-waveguide transitions

A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量