脉冲电压应力下氧化薄膜晶体管加热现象分析

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867089

Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka

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引用次数: 0

摘要

薄膜晶体管的焦耳加热退化是实现下一代显示器的重要问题之一。利用红外成像系统研究了透明非晶氧化物半导体TFT在脉冲操作下通道区域的热分布。讨论了自热温度与降解的关系。

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Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress

Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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