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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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A dual channel switched RF beamformer for LTE small cell base station receiver 一种用于LTE小型蜂窝基站接收机的双通道开关射频波束形成器
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867097
Y. Chiang, Jeng-Rern Yang
{"title":"A dual channel switched RF beamformer for LTE small cell base station receiver","authors":"Y. Chiang, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2014.6867097","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867097","url":null,"abstract":"This paper presents a dual channel switched RF-front-end beamformer to solve the severe interference problem that affects the LTE small-cell base stations. The beamformer system uses new type of hybrid phase shifter that situated at a later stage of the low-noise amplifier. The proposed system has four cases, and each can generate two opposite, non-overlapping coverage radio beams. Thus, the system can receive signals through two independent channels, either at the same frequency or at different frequencies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121509811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Orientation-controlled dielectrophoretic alignment of silicon microrod on a substrate with high positional accuracy 定位精度高的衬底上硅微棒的定向控制介电泳对准
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867093
A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani
{"title":"Orientation-controlled dielectrophoretic alignment of silicon microrod on a substrate with high positional accuracy","authors":"A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani","doi":"10.1109/IMFEDK.2014.6867093","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867093","url":null,"abstract":"We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of passivation films on DC characteristics of AlGaN/GaN HEMT 钝化膜对AlGaN/GaN HEMT直流特性的影响
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867065
S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara
{"title":"Effect of passivation films on DC characteristics of AlGaN/GaN HEMT","authors":"S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867065","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867065","url":null,"abstract":"This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121812505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Power electronics innovation by Silicon Carbide power semiconductor devices 碳化硅功率半导体器件的电力电子创新
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867086
H. Okumura
{"title":"Power electronics innovation by Silicon Carbide power semiconductor devices","authors":"H. Okumura","doi":"10.1109/IMFEDK.2014.6867086","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867086","url":null,"abstract":"The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115841823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx 溅射沉积SiO2和SiNx钝化AlGaN/GaN HEMTs的电流崩塌研究
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867061
T. Kakegami, S. Ohi, K. P. Sengendo, H. Tokuda, M. Kuzuhara
{"title":"Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx","authors":"T. Kakegami, S. Ohi, K. P. Sengendo, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867061","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867061","url":null,"abstract":"This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNx dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114894064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heteroepitaxial growth of InSb thin films on a Ge(111) substrate 锗(111)衬底上InSb薄膜的异质外延生长
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867069
T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa
{"title":"Heteroepitaxial growth of InSb thin films on a Ge(111) substrate","authors":"T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2014.6867069","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867069","url":null,"abstract":"This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122623896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of CMOS resonating push-push frequency doubler CMOS谐振推推式倍频器的设计
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867082
Hiroshi Adachi, M. Motoyoshi, K. Takano, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"Design of CMOS resonating push-push frequency doubler","authors":"Hiroshi Adachi, M. Motoyoshi, K. Takano, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/IMFEDK.2014.6867082","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867082","url":null,"abstract":"This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123955356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator 以ZrO2/Al2O3层压薄膜作为栅绝缘体的n-GaN MIS二极管的界面特性
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867063
S. Kodama, H. Tokuda, M. Kuzuhara
{"title":"Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator","authors":"S. Kodama, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867063","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867063","url":null,"abstract":"Interface properties have been investigated for n-GaN MIS diodes. ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al<sub>2</sub>O<sub>3</sub>, and the energy level of the interface state became shallow with increasing the annealing temperature.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123430835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic field sensitivity of poly-Si Hall device improved by high voltage application 高压应用提高了多晶硅霍尔器件的磁场灵敏度
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867077
Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo
{"title":"Magnetic field sensitivity of poly-Si Hall device improved by high voltage application","authors":"Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo","doi":"10.1109/IMFEDK.2014.6867077","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867077","url":null,"abstract":"We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
In-situ TEM observation of ReRAM switching ReRAM开关的原位透射电镜观察
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI: 10.1109/IMFEDK.2014.6867091
Yasuo Takahashi, M. Arita
{"title":"In-situ TEM observation of ReRAM switching","authors":"Yasuo Takahashi, M. Arita","doi":"10.1109/IMFEDK.2014.6867091","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867091","url":null,"abstract":"Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115716868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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