In-situ TEM observation of ReRAM switching

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867091

Yasuo Takahashi, M. Arita

引用次数: 0

Abstract

Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.

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ReRAM开关的原位透射电镜观察

利用原位透射电镜(TEM)首次成功观察了电阻式随机存取存储器(ReRAM)在电阻式开关过程中的结构变化。我们成功地对三种不同材料的ReRAM器件进行了观察。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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