Magnetic field sensitivity of poly-Si Hall device improved by high voltage application

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867077

Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo

引用次数: 3

Abstract

We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.

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高压应用提高了多晶硅霍尔器件的磁场灵敏度

我们通过施加高压提高了多晶硅霍尔器件的磁场灵敏度。通过施加580 V的磁场，我们获得了5.13 V/T的磁场灵敏度。该值比以前的磁场灵敏度高1000倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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