锗(111)衬底上InSb薄膜的异质外延生长

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867069

T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa

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摘要

本文讨论了锗衬底上InSb薄膜的特性。为了在Ge衬底上生长出高质量的InSb薄膜，我们尝试优化生长条件。采用两步法在Ge(111)衬底上直接生长InSb薄膜。首先，我们研究了生长温度和第一层厚度的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heteroepitaxial growth of InSb thin films on a Ge(111) substrate

This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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