T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa
{"title":"Heteroepitaxial growth of InSb thin films on a Ge(111) substrate","authors":"T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2014.6867069","DOIUrl":null,"url":null,"abstract":"This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.