CMOS谐振推推式倍频器的设计

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867082

Hiroshi Adachi, M. Motoyoshi, K. Takano, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima

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引用次数: 5

摘要

本文讨论了将一对差分驱动mosfet的漏极捆绑在一起的CMOS推推倍频器的转换增益最大化问题。我们建议在mosfet的漏极之间插入传输线，作为基频谐振器。在对所提出电路的仿真中，在0 dBm的输入功率下实现了2.2 dB的输出功率提升。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of CMOS resonating push-push frequency doubler

This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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