K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori
{"title":"原始放大器只使用发射极和硅双极晶体管的基极","authors":"K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori","doi":"10.1109/IMFEDK.2014.6867048","DOIUrl":null,"url":null,"abstract":"We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Original amplifier using only emitter and base of a Si bipolar transistor\",\"authors\":\"K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori\",\"doi\":\"10.1109/IMFEDK.2014.6867048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Original amplifier using only emitter and base of a Si bipolar transistor
We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.