硅氧烷钝化层下栅非晶InGaZnO薄膜晶体管的可靠性

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867088

Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka

{"title":"硅氧烷钝化层下栅非晶InGaZnO薄膜晶体管的可靠性","authors":"Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867088","DOIUrl":null,"url":null,"abstract":"We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer\",\"authors\":\"Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka\",\"doi\":\"10.1109/IMFEDK.2014.6867088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

研究了聚合物钝化对非晶铟镓锌氧化物(a-IGZO) TFT可靠性的影响。在以SiO2/Si为衬底的下栅型a-IGZO TFTs上制备了光敏硅氧烷钝化层。对于光敏材料，采用UV光刻技术可以形成接触孔，而无需等离子体蚀刻工艺，导致通道层严重损坏。对有钝化层和没有钝化层的样品在正偏置应力(PBS;利用光敏硅氧烷钝化层提高了a-IGZO tft的稳定性。

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Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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