InGaZnO薄膜晶体管断漏电流机理研究

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867062

G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura

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引用次数: 2

摘要

我们利用二维器件模拟器研究了InGaZnO薄膜晶体管的关漏电流机制。为了重现实验数据的量级，在IGZO通道中引入了可能源于氧空位的深供体样陷阱态，这显著影响了关漏电流。结果表明，通道电位的钉钉效应导致了离态区Id-Vg特性的平台行为，这取决于深态的数量和深度。

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Mechanism of off-leakage current in InGaZnO thin-film transistors

We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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