MOD法制备BaTiO3铁电薄膜的电阻滞后

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867072

S. Hashimoto, Shinpei Fuchida, Syu Ou, K. Yamashita, M. Noda

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引用次数: 0

摘要

制备了一种mod法制备的BaTiO3 (BT)薄膜，研究了其铁电性能与电阻滞后的关系。对于厚度为110 nm的铁电BT薄膜，观察到其顽固性场与电阻迟滞特性有定量关系，其中电流通/关比为1-2个数量级。我们认为薄膜中的铁电性在电阻迟滞中产生了不同类型的行为，对改善这种行为是有效的。

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Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method

An MOD-made BaTiO3 (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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