DNA记忆场效应晶体管传导机制的研究

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867051

Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama

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引用次数: 0

摘要

利用DNA通道/SiO2/Si栅极结构考察了载体在DNA中的行为。制备了缺口为120nm的源极/漏极，并在SOI薄膜上刻蚀，在电极之间固定DNA。dID/dVD在漏极电压为0.3 V时显示最大值。这种现象与DNA中被捕获和被释放的电子有关。电子被鸟嘌呤碱捕获，并被通道内的电场捕获。

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Study of the conduction mechanism of the DNA memory FET

The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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