退火对混合串联太阳能电池GaAs/Si键合界面的影响

L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa
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引用次数: 0

摘要

研究了退火对III-V-on-Si杂化串联太阳能电池GaAs/Si键合界面的影响。利用透射电子显微镜观察了表面活性键合法制备的GaAs/Si结界面上的非晶态层。在400℃退火后,非晶态层消失。我们还研究了退火对n+-GaAs/n++-Si和p+-GaAs/n++-Si结电流-电压特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400°C. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.
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