Study of the conduction mechanism of the DNA memory FET

Abstract

The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.