Mechanism of off-leakage current in InGaZnO thin-film transistors

G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura
{"title":"Mechanism of off-leakage current in InGaZnO thin-film transistors","authors":"G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura","doi":"10.1109/IMFEDK.2014.6867062","DOIUrl":null,"url":null,"abstract":"We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.
InGaZnO薄膜晶体管断漏电流机理研究
我们利用二维器件模拟器研究了InGaZnO薄膜晶体管的关漏电流机制。为了重现实验数据的量级,在IGZO通道中引入了可能源于氧空位的深供体样陷阱态,这显著影响了关漏电流。结果表明,通道电位的钉钉效应导致了离态区Id-Vg特性的平台行为,这取决于深态的数量和深度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信