1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)最新文献

Long term behavior of passive components for high temperature applications-an update 用于高温应用的无源元件的长期行为-更新

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-06-14 DOI: 10.1109/HTEMDS.1998.730694

R. Grzybowski

引用次数: 9

Recent advances in high-voltage SiC power devices 高压SiC功率器件的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730653

T. Chow, N. Ramungul, M. Ghezzo

引用次数: 10

Effects of HCl-H/sub 2/ pre-growth etching on quality of 6H-SiC epitaxial layers HCl-H/sub - 2/预生长蚀刻对6H-SiC外延层质量的影响

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730641

R. Asai

引用次数: 0

Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K SiC-AlN、SiC-BeO、Al/sub 2/O/sub 3/陶瓷在300- 1800k温度范围内的电导率

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730697

D.D. Avrov, A. Bakin, S. I. Dorozhkin, V.P. Rastegaev, Yu.M. Tairov, B. Bilalov, G. Safaraliev, S. A. Shabanov, A. Lebedev

引用次数: 3

High-temperature contact metallization to semiconductors 半导体的高温接触金属化

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730690

S. Gasser

引用次数: 3

Low power ASIC for high temperature applications 用于高温应用的低功耗ASIC

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730655

O. Vermesan, T. Rispal, L. Soulier

引用次数: 8

Diffusion barriers on titanium-based ohmic contact structures on SiC SiC上钛基欧姆接触结构的扩散势垒

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730692

R. Wenzel, F. Goesmann, R. Schmid-Fetzer

引用次数: 1

Materials selection issues for high operating temperature (HOT) electronic packaging 高温(HOT)电子封装材料选择问题

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730695

C. Gallagher, B. Shearer, G. Matijasevic

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引用次数: 7

Recent advances in SOI materials and device technologies for high temperature 高温SOI材料及器件技术的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730656

S. Cristoloveanu, G. Reichert

引用次数: 10

Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide 用于在n型4H碳化硅中获得高电阻层的氢和氦植入物

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730636

R. Nadella, O. W. Holland

引用次数: 1