用于在n型4H碳化硅中获得高电阻层的氢和氦植入物

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI:10.1109/HTEMDS.1998.730636

R. Nadella, O. W. Holland

{"title":"用于在n型4H碳化硅中获得高电阻层的氢和氦植入物","authors":"R. Nadella, O. W. Holland","doi":"10.1109/HTEMDS.1998.730636","DOIUrl":null,"url":null,"abstract":"The effect of light ion implantation damage on the resistivity of n-type 4H-silicon carbide was investigated using hydrogen and helium. Resistivity variation as a function of post-implant annealing temperature and measurement temperature was studied. Maximum resistivities of the order of 10/sup 7/ and 10/sup 8/ /spl Omega/-cm were observed for hydrogen and helium implanted samples, respectively, at room temperature. With increasing measurement temperature, resistivities decreased with activation energies of 0.36 and 0.16 eV for hydrogen and helium, respectively. Resistivities start to decrease after annealing at /spl ges/600/spl deg/C. Rutherford backscattering measurements show implantation damage in the high-resistivity samples.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide\",\"authors\":\"R. Nadella, O. W. Holland\",\"doi\":\"10.1109/HTEMDS.1998.730636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of light ion implantation damage on the resistivity of n-type 4H-silicon carbide was investigated using hydrogen and helium. Resistivity variation as a function of post-implant annealing temperature and measurement temperature was studied. Maximum resistivities of the order of 10/sup 7/ and 10/sup 8/ /spl Omega/-cm were observed for hydrogen and helium implanted samples, respectively, at room temperature. With increasing measurement temperature, resistivities decreased with activation energies of 0.36 and 0.16 eV for hydrogen and helium, respectively. Resistivities start to decrease after annealing at /spl ges/600/spl deg/C. Rutherford backscattering measurements show implantation damage in the high-resistivity samples.\",\"PeriodicalId\":197749,\"journal\":{\"name\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HTEMDS.1998.730636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用氢气和氦气研究了光离子注入损伤对n型4h碳化硅电阻率的影响。研究了电阻率随植入后退火温度和测量温度的变化规律。在室温下，注入氢气和氦气的样品的最大电阻率分别为10/sup 7/和10/sup 8/ /spl ω /-cm。随着测量温度的升高，氢和氦的电阻率降低，活化能分别为0.36和0.16 eV。在600℃退火后，电阻率开始下降。卢瑟福后向散射测量表明，在高电阻率样品中存在注入损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

The effect of light ion implantation damage on the resistivity of n-type 4H-silicon carbide was investigated using hydrogen and helium. Resistivity variation as a function of post-implant annealing temperature and measurement temperature was studied. Maximum resistivities of the order of 10/sup 7/ and 10/sup 8/ /spl Omega/-cm were observed for hydrogen and helium implanted samples, respectively, at room temperature. With increasing measurement temperature, resistivities decreased with activation energies of 0.36 and 0.16 eV for hydrogen and helium, respectively. Resistivities start to decrease after annealing at /spl ges/600/spl deg/C. Rutherford backscattering measurements show implantation damage in the high-resistivity samples.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)

自引率

0.00%

发文量