高温SOI材料及器件技术的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI:10.1109/HTEMDS.1998.730656

S. Cristoloveanu, G. Reichert

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引用次数: 10

摘要

本文综述了绝缘体上硅(SOI)技术、结构和器件的现状，旨在说明CMOS绝缘体上硅(SOI)在高温应用中的吸引力。MOSFET的基本参数(泄漏电流、阈值电压、载流子迁移率和亚阈值摆幅)被描述为温度高达300/spl℃的函数。本文还讨论了由浮体、界面耦合和寄生双极晶体管引起的更具体的SOI机制的温度行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent advances in SOI materials and device technologies for high temperature

The present status of silicon-on-insulator (SOI) technologies, structures and devices is reviewed with the aim of demonstrating the attractiveness of CMOS SOI for high-temperature applications. The basic MOSFET parameters (leakage current, threshold voltage, carrier mobility and subthreshold swing) are described as a function of temperature up to 300/spl deg/C. The temperature behaviour of more specific SOI mechanisms, induced by the floating body, interface coupling and parasitic bipolar transistor, is also discussed.

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1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)

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