用于高温应用的低功耗ASIC

O. Vermesan, T. Rispal, L. Soulier
{"title":"用于高温应用的低功耗ASIC","authors":"O. Vermesan, T. Rispal, L. Soulier","doi":"10.1109/HTEMDS.1998.730655","DOIUrl":null,"url":null,"abstract":"This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low power ASIC for high temperature applications\",\"authors\":\"O. Vermesan, T. Rispal, L. Soulier\",\"doi\":\"10.1109/HTEMDS.1998.730655\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.\",\"PeriodicalId\":197749,\"journal\":{\"name\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HTEMDS.1998.730655\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

本文介绍了一种工作温度可达200℃的低功耗/低电压混合信号BiCMOS ASIC的设计与实现。ASIC集成在井下压力和温度测量仪表中。它包含四个测量通道(clk1时钟1,clk2时钟2,p -压力,t -温度),四个高精度X-tal皮尔斯振荡器和每个通道的信号处理路径。CLK1通道的输出频率用作压力和温度通道的精度参考,并用作外部时钟。ASIC专为高压传感器设计,并集成到井下存储器和电缆石英表中。ASIC采用1.2 /spl mu/m BiCMOS双聚双金属工艺制作。电压供应范围为5v至3.3 V,电路占用15mm /sup /的硅面积。ASIC封装在陶瓷28针SOIC封装中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power ASIC for high temperature applications
This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.
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