{"title":"用于高温应用的低功耗ASIC","authors":"O. Vermesan, T. Rispal, L. Soulier","doi":"10.1109/HTEMDS.1998.730655","DOIUrl":null,"url":null,"abstract":"This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low power ASIC for high temperature applications\",\"authors\":\"O. Vermesan, T. Rispal, L. Soulier\",\"doi\":\"10.1109/HTEMDS.1998.730655\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.\",\"PeriodicalId\":197749,\"journal\":{\"name\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HTEMDS.1998.730655\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200/spl deg/C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 /spl mu/m BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm/sup 2/. The ASIC is packaged in a ceramic 28 pin SOIC package.