1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)最新文献_第3页

High temperature performance of hybrid GaN/SiC high power diodes GaN/SiC混合大功率二极管的高温性能

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730660

M. Trivedi, K. Shenai

引用次数: 3

Study on Si integrated circuits operating up to 462/spl deg/C 工作温度高达462/spl度/C的Si集成电路的研究

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730654

M. Migitaka

{"title":"Study on Si integrated circuits operating up to 462/spl deg/C","authors":"M. Migitaka","doi":"10.1109/HTEMDS.1998.730654","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730654","url":null,"abstract":"In order to develop a silicon IC operating up to and above 450/spl deg/C, integrated injection logic (IIL) was chosen for its peculiar characteristics to high temperature operation. New structures for the IIL were designed through the experimental and theoretical studies of p-n junctions, transistors, and IILs at high temperature. We made Si ICs consisting of nine-stage ILL ring-oscillators by fabrication processes developed by Toyota, where the low temperature epitaxial growth and ion implantation processes were alternately repeated. The first generation IC oscillator made by a 10 /spl mu/m design rule operated from room temperature up to 370/spl deg/C in 1990, the second made by a self-aligned technology increased the maximum operating temperature to 415/spl deg/C in 1991, and the third made by a 5 /spl mu/m design rule increased this temperature to 454/spl deg/C in 1992. New ideas were introduced to the IIL design concept, and the IC fabrication processes were redesigned. In 1994, we succeeded in creating a new IIL structure by this fabrication process, with steps reduced from 52 to 39. The newly developed IC oscillator operated up to a temperature of 462/spl deg/C. Two-bit microcomputers were designed and fabricated using 852 IILs and operated at temperatures from 24 to 265/spl deg/C with a clock frequency of 100 kHz. No failure occurred in more than 1000 hours of operation at a temperature of 250/spl deg/C.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124349501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

State-of-the-art in defect control of bulk SiC 块状碳化硅缺陷控制的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730635

A. Bakin, S. I. Dorozhkin

引用次数: 1

Properties of high thermal conductivity carbon-carbon composites for thermal management applications 用于热管理应用的高导热碳-碳复合材料的性能

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730696

I. Golecki, L. Xue, R. Leung, T. Walker, A. Anderson, D. Dewar, C. Duncan, J. Van Horik

引用次数: 22

Recent advances in high temperature, high frequency SiC devices 高温、高频SiC器件的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730637

R. C. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk

{"title":"Recent advances in high temperature, high frequency SiC devices","authors":"R. C. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk","doi":"10.1109/HTEMDS.1998.730637","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730637","url":null,"abstract":"Silicon carbide (SiC) is an emerging semiconductor which has proven to be well suited to high temperature power switching and high-frequency power generation. This paper examines recent advances in materials development and device performance. In boule growth, we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed: (1) undoped semi-insulating for MESFETs, and (2) nitrogen doped highly conducting boules for SITs and power switches. Very uniform planetary multiwafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5 /spl mu/m/hr, exhibiting unintentional n-type doping of /spl sim/1/spl times/10/sup 15/ cm/sup -3/, and associated room temperature Hall mobilities of /spl sim/1000 cm/sup 2//Vs. Controlled n-type doping between /spl sim/5/spl times/10/sup 15/ cm/sup -3/ and >1/spl times/10/sup 18/ cm/sup -3/ has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS turn-off thyristors (MTO/sup TM/) are being investigated as power switches because they offer ease of turn-off, 500/spl deg/C operation and reduced cooling requirements. In the fabrication of high power, high frequency transistors at UHF, L-band, S-band and X-band, SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistors have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-band.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132107017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

High temperature growth of SiC and group III nitride structures in production reactors SiC和III族氮化物结构在生产反应器中的高温生长

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1900-01-01 DOI: 10.1109/HTEMDS.1998.730688

D. Schmitz, R. Beccard, E. Woelk, G. Strauch, H. Juergensen

引用次数: 0

Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures 高温下薄膜SOI n-MOSFET低频噪声测量

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1900-01-01 DOI: 10.1109/HTEMDS.1998.730657

V. Dessard, J. Eggermont, D. Flandre

引用次数: 8