High temperature growth of SiC and group III nitride structures in production reactors

Abstract

We describe the use of a family of high temperature MOVPE reactors to grow SiC and III-V nitrides such as GaN. The load capacity ranges from single wafer machines to multiple wafer mass production reactors. All of these reactors have a two flow injection system, allowing separated inlet of the various reactants. To achieve maximum growth uniformity, the Gas Foil Rotation/sup R/ principle is applied. The multiwafer reactors are planetary reactors with a double rotation of substrates. Extensive modeling has been used in order to find the optimum reactor geometries. An optimization of uniformity and efficiency and a minimization of undesired parasitic reactions has thus been obtained.