1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)最新文献_第2页

High power SiC-devices. New result and prospects 大功率sic器件。新成果与展望

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730639

A. Lebedev, V. Chelnokov

引用次数: 0

Recent advances in SiC materials and device technologies in Sweden 瑞典SiC材料和器件技术的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730642

M. Ostling

引用次数: 1

Diamond based metal-semiconductor contacts for elevated temperatures 高温用金刚石基金属半导体触点

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730693

H. Fecht, C. Ettl, M. Werner

引用次数: 0

Advances in InGaN technology for light-emitting diodes and semiconductor lasers 用于发光二极管和半导体激光器的InGaN技术进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730679

S. Rudaz, R. Fletcher

{"title":"Advances in InGaN technology for light-emitting diodes and semiconductor lasers","authors":"S. Rudaz, R. Fletcher","doi":"10.1109/HTEMDS.1998.730679","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730679","url":null,"abstract":"The past ten years have seen a virtual revolution for the optoelectronics industry dealing with LEDs. With the development of new III-V materials, such as AlGaAs, AlInGaP, and InGaN, and epitaxial structures capable of very efficient visible light generation, a vast new field of applications for LEDs has opened. The most recent development has been the introduction of bright blue and green LEDs based on InGaN. This now makes coverage of the entire color spectrum possible, from red to violet at brightness and efficiency levels exceeding conventional filament light sources. Full-color large screen video displays with excellent color rendition and brightness and even white light LEDs are being produced. Semiconductor lasers have also benefitted from progress with InGaN technology, and have been demonstrated with emission wavelengths around 400 nm. The primary importance of these devices is in the area of CD data storage, where the short wavelength increases storage density by approximately a factor of four over current systems using a red AlInGaP or infrared AlGaAs laser. Despite these advances, we have barely begun to see the possibilities for LEDs. Continuing improvements in materials and device efficiency and light extraction techniques are set to raise performance limits by at least a factor of two for InGaN and AlInGaP devices over the next few years. This presentation focuses on the advances that have been achieved with InGaN materials technology and the types of devices that have been created. Current applications and possible future use for high performance blue LEDs and lasers are also discussed.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128920070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advances in electronic packaging technologies to temperatures as high as 500/spl deg/C 电子封装技术进步到温度高达500/spl℃

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730699

R. Grzybowski

{"title":"Advances in electronic packaging technologies to temperatures as high as 500/spl deg/C","authors":"R. Grzybowski","doi":"10.1109/HTEMDS.1998.730699","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730699","url":null,"abstract":"Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Recent advances in GaAs devices for use at high temperatures 高温用砷化镓器件的最新进展

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730659

J. Wurfl

引用次数: 8

High-temperature amorphous-like semiconductors 高温非晶状半导体

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730689

O. A. Golikova, M. Kazanin

引用次数: 0

High temperature stable metallization schemes for SiC-technology operating in air 空气中sic工艺的高温稳定金属化方案

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730691

K. Gottfried, J. Kříž, J. Leibelt, C. Kaufmann, T. Gessner

引用次数: 5

High temperature performance of LDMOSFETs used in RFIC applications 用于RFIC应用的ldmosfet的高温性能

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730658

P. Perugupalli, M. Trivedi, K. Shenai, S. K. Leong

引用次数: 3

Reliability concerns in high temperature electronic systems 高温电子系统的可靠性问题

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI: 10.1109/HTEMDS.1998.730698

P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri

{"title":"Reliability concerns in high temperature electronic systems","authors":"P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri","doi":"10.1109/HTEMDS.1998.730698","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730698","url":null,"abstract":"Small signal commercial electronics have traditionally been designed to operate at temperatures below 125/spl deg/C. This has become a severe constraint in the development of next generation smart power electronic systems, such as remote actuators, point-of-use power supplies, and distributed high power control systems. These systems dissipate considerable heat and can operate in environments where the local ambient temperatures reach 200/spl deg/C. The ability to operate these systems without the need for active cooling is seen as a critical technology for the 21st century. The issues involved in designing silicon-based electronic systems for use at temperatures as high as 200/spl deg/C are presented in this work. The critical limiting components and packaging materials have been identified through design analyses conducted on commercially available aeronautic and automotive control modules. It is found that most standard components and packaging elements can be used up to 200/spl deg/C. However, capacitors, wire bonds, eutectic tin-lead solder joints, and FR-4 boards seriously degrade at temperatures around 200/spl deg/C. For these elements, alternative choices are recommended.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122950844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13