High power SiC-devices. New result and prospects

A. Lebedev, V. Chelnokov
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Abstract

In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.
大功率sic器件。新成果与展望
本文对电子器件生产中重要的SiC参数进行了理论分析。同时,对不同的碳化硅生长工艺方法进行了比较。对于底物生长,研究了Lely法和改进的Lely法;对n型脱皮生长的升华外延(SE)、无容器液相外延(CFLPE)和化学气相沉积(CVD)进行了比较;对于p-n结的制备,比较了SE、CFLPE、CVD、Al注入(ID)和硼扩散;而对于台面结构的形成,等离子体离子蚀刻进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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