{"title":"High power SiC-devices. New result and prospects","authors":"A. Lebedev, V. Chelnokov","doi":"10.1109/HTEMDS.1998.730639","DOIUrl":null,"url":null,"abstract":"In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.