电子封装技术进步到温度高达500/spl℃

R. Grzybowski
{"title":"电子封装技术进步到温度高达500/spl℃","authors":"R. Grzybowski","doi":"10.1109/HTEMDS.1998.730699","DOIUrl":null,"url":null,"abstract":"Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Advances in electronic packaging technologies to temperatures as high as 500/spl deg/C\",\"authors\":\"R. Grzybowski\",\"doi\":\"10.1109/HTEMDS.1998.730699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.\",\"PeriodicalId\":197749,\"journal\":{\"name\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HTEMDS.1998.730699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

摘要

SOI集成电路技术的进步和宽带隙半导体(如SiC)的发展使高温电子器件的实际部署成为可能。虽然集成电路是实现完整的高温电子系统的关键,但也需要无源元件,包括电阻,电容器,磁性和晶体。所有这些类别的电子元件存在不同程度的温度高达500/spl度/C。然而,使单个组件更可靠的最大障碍之一是它们的封装。同样,将单个组件集成到一个系统中的最大障碍之一是对恶劣环境包装技术和材料选择的理解。本文讨论了电子封装在恶劣环境下的应用,适用于各种包装水平。我们首先看看与IC芯片级封装微电路相关的常见故障机制,以及单个无源元件的封装方法。随着这些失效机制的确定,我们考虑替代材料的选择和制造方法,使电子系统能够在比传统方法更高的温度操作环境中进行封装。我们还研究了PWB级别的封装选项,包括高温衬底材料,互连金属化,焊料和钎焊材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advances in electronic packaging technologies to temperatures as high as 500/spl deg/C
Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信