GaN/SiC混合大功率二极管的高温性能

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI:10.1109/HTEMDS.1998.730660

M. Trivedi, K. Shenai

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引用次数: 3

摘要

宽带隙半导体正在探索用于高功率、高温应用。很难找到一种能满足所有要求的材料。由GaN和SiC外延层组成的新型混合器件可以提高高功率整流应用的性能。本文对该装置的电气特性进行了仿真研究。该器件利用GaN和SiC二极管的优势，实现了更好的导通状态和开关特性，并具有更好的热处理能力。

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High temperature performance of hybrid GaN/SiC high power diodes

Wide bandgap semiconductors are being explored for use in high power, high temperature applications. It is difficult to find a single material that meets all requirements. Improved performance in high power rectification applications can be achieved by a novel hybrid device consisting of GaN and SiC epitaxial layers. This paper presents a simulation study of the electrical characteristics of such a device. The device exploits advantages of GaN and SiC diodes to achieve improved on-state and switching characteristics with better thermal handling capability.

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来源期刊

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)

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