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引用次数: 1
摘要
碳化硅是一种非常有前途的高温半导体材料，它也有望成为功率半导体器件的首选材料。工作半导体器件的要求之一是具有低电阻和热稳定的欧姆接触。研究了钛基接触材料(Ti/sub 3/SiC/sub 2/、TiSi/sub 2/、TiC)、扩散势垒(Pd、Ti、TiC、TiCN、W)和顶部金属化(Al、Au、Pd)在n-6H-SiC表面的接触体系。使用SiC- ti /sub - 3/SiC/sub - 2/-Pd-Au接触层结构获得了最好的结果，该结构在600/spl度/C下具有形貌和电稳定性长达90小时，并且具有良好的欧姆行为。
Diffusion barriers on titanium-based ohmic contact structures on SiC
Silicon carbide is a very promising semiconductor material for high temperature applications and it can also be expected to become the material of choice for power semiconductor devices. One of the requirements for a working semiconductor device is the availability of a low resistance and thermally stable ohmic contact. Contact systems on n-6H-SiC using titanium-based contact materials (Ti/sub 3/SiC/sub 2/, TiSi/sub 2/, TiC), diffusion barriers (Pd, Ti, TiC, TiCN, W) and top metallizations (Al, Au, Pd) were investigated. Best results were obtained using the SiC-Ti/sub 3/SiC/sub 2/-Pd-Au contact layer structure, which is morphologically and electrically stable for up to 90 hours at 600/spl deg/C and exhibits good ohmic behaviour.
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