Recent advances in SOI materials and device technologies for high temperature

Abstract

The present status of silicon-on-insulator (SOI) technologies, structures and devices is reviewed with the aim of demonstrating the attractiveness of CMOS SOI for high-temperature applications. The basic MOSFET parameters (leakage current, threshold voltage, carrier mobility and subthreshold swing) are described as a function of temperature up to 300/spl deg/C. The temperature behaviour of more specific SOI mechanisms, induced by the floating body, interface coupling and parasitic bipolar transistor, is also discussed.