D.D. Avrov, A. Bakin, S. I. Dorozhkin, V.P. Rastegaev, Yu.M. Tairov, B. Bilalov, G. Safaraliev, S. A. Shabanov, A. Lebedev
{"title":"SiC-AlN、SiC-BeO、Al/sub 2/O/sub 3/陶瓷在300- 1800k温度范围内的电导率","authors":"D.D. Avrov, A. Bakin, S. I. Dorozhkin, V.P. Rastegaev, Yu.M. Tairov, B. Bilalov, G. Safaraliev, S. A. Shabanov, A. Lebedev","doi":"10.1109/HTEMDS.1998.730697","DOIUrl":null,"url":null,"abstract":"The electrophysical properties of SiC-AlN, SiC-BeO, and Al/sub 2/O/sub 3/ ceramics at high temperatures were investigated. Samples of ceramics were obtained by the hot-pressure method. The investigation shows that specific resistance at 300 K is: 10/sup 12/ /spl Omega/.cm, 10/sup 9/ /spl Omega/.cm, and 10/sup 7/ /spl Omega/.cm for SiC-BeO ceramics containing 0.5%, 1.0%, and 2.0% BeO respectively; 10/sup 12/ /spl Omega/.cm, 10/sup 8/ /spl Omega/.cm, and 10/sup 6/ /spl Omega/.cm for SiC-AlN ceramics containing /spl ges/50%, 20% and 10% AlN respectively; and 10/sup 1/2 /spl Omega/.cm for Al/sub 2/O/sub 3/. The specific resistance of all of these ceramics at 1500 K is about 10 /spl Omega/.cm.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K\",\"authors\":\"D.D. Avrov, A. Bakin, S. I. Dorozhkin, V.P. Rastegaev, Yu.M. Tairov, B. Bilalov, G. Safaraliev, S. A. Shabanov, A. Lebedev\",\"doi\":\"10.1109/HTEMDS.1998.730697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrophysical properties of SiC-AlN, SiC-BeO, and Al/sub 2/O/sub 3/ ceramics at high temperatures were investigated. Samples of ceramics were obtained by the hot-pressure method. The investigation shows that specific resistance at 300 K is: 10/sup 12/ /spl Omega/.cm, 10/sup 9/ /spl Omega/.cm, and 10/sup 7/ /spl Omega/.cm for SiC-BeO ceramics containing 0.5%, 1.0%, and 2.0% BeO respectively; 10/sup 12/ /spl Omega/.cm, 10/sup 8/ /spl Omega/.cm, and 10/sup 6/ /spl Omega/.cm for SiC-AlN ceramics containing /spl ges/50%, 20% and 10% AlN respectively; and 10/sup 1/2 /spl Omega/.cm for Al/sub 2/O/sub 3/. The specific resistance of all of these ceramics at 1500 K is about 10 /spl Omega/.cm.\",\"PeriodicalId\":197749,\"journal\":{\"name\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HTEMDS.1998.730697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K
The electrophysical properties of SiC-AlN, SiC-BeO, and Al/sub 2/O/sub 3/ ceramics at high temperatures were investigated. Samples of ceramics were obtained by the hot-pressure method. The investigation shows that specific resistance at 300 K is: 10/sup 12/ /spl Omega/.cm, 10/sup 9/ /spl Omega/.cm, and 10/sup 7/ /spl Omega/.cm for SiC-BeO ceramics containing 0.5%, 1.0%, and 2.0% BeO respectively; 10/sup 12/ /spl Omega/.cm, 10/sup 8/ /spl Omega/.cm, and 10/sup 6/ /spl Omega/.cm for SiC-AlN ceramics containing /spl ges/50%, 20% and 10% AlN respectively; and 10/sup 1/2 /spl Omega/.cm for Al/sub 2/O/sub 3/. The specific resistance of all of these ceramics at 1500 K is about 10 /spl Omega/.cm.
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