TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)最新文献

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Design and fabrication of an electrostatically actuated MEMS probe card 静电驱动MEMS探针卡的设计与制造
K. Shingo, K. Kataoka, T. Itoh, T. Suga
{"title":"Design and fabrication of an electrostatically actuated MEMS probe card","authors":"K. Shingo, K. Kataoka, T. Itoh, T. Suga","doi":"10.1109/SENSOR.2003.1217067","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1217067","url":null,"abstract":"We have designed and fabricated a new type of MEMS probe card consisting of electrostatically-driven microprobes, which can be used for a next generation wafer probe card with the fritting-contact method. MEMS probe cards are requisite to higher pad-density and smaller pad-pitch chips, and are effective in high frequency testing. If a probe card consists of an array of actuator-integrated microprobes, it has some further advantages. Since the deflection of each probe can individually be controlled, probe-pad contact force can be uniform by compensating the probe-pad distance deviation with probe deflection. Furthermore, since contacts can directly be switched on and off, it could be suitable for a wafer-level test/burn-in probe card. To obtain a design guideline of actuator-integrated probes, we investigated the characteristics of fritting contact between electroplated Ni probes and Al electrodes. As a result, it has been found that both the contact and disconnection forces of Ni probes in fritting contact process could be as small as 10 /spl mu/N. We proposed a MEMS probe card that is composed of an array of Ni microcantilevers with a rolling-contact touch-mode electrostatic actuator and developed a micromachining process which includes electroplating deposition of two layers having different internal stress and etching of Cu sacrifice layer.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123681508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Thermally driven microactuator containing thermal isolation structure with polyimide and its application to microvalve 聚酰亚胺隔热结构热驱动微执行器及其在微阀上的应用
H. Kawada, H. Yoshida, M. Kamakura, K. Yoshida, M. Saitou, K. Kawahito, S. Tomonari
{"title":"Thermally driven microactuator containing thermal isolation structure with polyimide and its application to microvalve","authors":"H. Kawada, H. Yoshida, M. Kamakura, K. Yoshida, M. Saitou, K. Kawahito, S. Tomonari","doi":"10.1109/SENSOR.2003.1217171","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1217171","url":null,"abstract":"We have developed a thermally /spl middot/ isolated bimorph structure based on a silicon (Si) /nickel (Ni) pair. A 2.5-mm-long beam of the bimorph was thermally isolated by a polyimide comb from the rest of the Si structure. The Si and Ni layers of the bimorph were 30 /spl mu/m and 25 /spl mu/m thick, respectively. This geometry enabled us to generate the bending displacement (the stroke) of the free end of the bimorph up to 100 /spl mu/m at about 100 /spl deg/C with a generated force of about 15 mN. A low-voltage actuation (<3V) and low-energy consumption (<0.2W) were achieved. Besides, the miniaturized Si/Ni bimorph actuator was incorporated into the valve structure. The actual size of the fabricated valve is 7.3/spl times/5.8/spl times/1.2 mm/sup 3/. The flow rate from 0 to 500 ml/min at the air pressure of 47 kPa with low leakage rate of 0.03 ml/min and good linearity of the air pressure control were achieved.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125807635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A single crystal SiC plug-and-play high temperature drag force transducer 单晶SiC即插即用高温阻力传感器
R. Okojie, G. Fralick, G. Saad, C. Blaha, J. Adamczyk, J. Feiereisen
{"title":"A single crystal SiC plug-and-play high temperature drag force transducer","authors":"R. Okojie, G. Fralick, G. Saad, C. Blaha, J. Adamczyk, J. Feiereisen","doi":"10.1109/SENSOR.2003.1215338","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215338","url":null,"abstract":"A novel fully packaged single crystal piezoresistive 6H-silicon carbide (6H-SiC) drag force transducer based on cantilever beam deflection was demonstrated for the first time in a hot (/spl sim/600/spl deg/C) section of a gas turbine engine to study turbulence. The beam deflection was directly proportional to the force induced by the flow stream. The induced strain was transferred to the piezoresistors etched into the 6H-SiC epilayer, which changes in resistance and read out externally as the output of the Wheatstone bridge circuit. The transducer natural frequency was measured to be 35 kHz and was in good agreement with the calculated value of 35.7 kHz. The presumed turbulence was extracted by subtracting the ensemble mean waveform signal and averaging the results. The post engine test at lower temperature and up to Mach 0.8 indicated the typical second order, /spl nu//sup 2/, where /spl nu/ is the average flow velocity. This result confirmed that the transducer survived the high temperature test. The result provided further confirmation of the potential application of semiconductor SiC as a piezoresistive sensor in temperatures that are beyond the functional capability of conventional silicon based sensors.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125953179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Silicon MEMS micro-switch with charge-induced retention 带有电荷诱导保留的硅MEMS微开关
K. Suzuki, Y. Neav
{"title":"Silicon MEMS micro-switch with charge-induced retention","authors":"K. Suzuki, Y. Neav","doi":"10.1109/SENSOR.2003.1217116","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1217116","url":null,"abstract":"We report for the first time that a silicon MEMS micro-switch has successfully been operated in a manner of having a retention function, which is induced by a flow of stored charges. Depending on the maximum applied voltage, the micro-switches change the state of no bias voltage between 'Switch-on' and 'Switch-off' states. This change is reversible and repeatable. The retention function will enable a new type of MEMS micro-switch for mobile wireless terminals, offering low power consumption, simple circuit configuration, and long stability.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126157273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as NO gas sensors in high temperature 具有溅射和激光烧蚀薄铂栅极的碳化硅肖特基二极管作为高温NO气体传感器
S. A. Khan, G. Wei, E. A. de Vasconcelos, H. Uchida, T. Katsube
{"title":"Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as NO gas sensors in high temperature","authors":"S. A. Khan, G. Wei, E. A. de Vasconcelos, H. Uchida, T. Katsube","doi":"10.1109/SENSOR.2003.1215370","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215370","url":null,"abstract":"We fabricated thin catalytic metal gate Schottky diodes prepared with Pt gates deposited by sputter and laser ablation method on SiC substrates responding to NO gas at high temperature. Schottky barrier height, ideality factor and series resistance were evaluated from linear G/I/spl times/G plots. Upon exposure to NO gas, the barrier height decreased, ideality factor increased and series resistance decreased and as a whole effect, forward current of the devices was increased. Change of barrier height was larger for 4H-SiC Schottky diodes than 6H-SiC Schottky diodes. The devices were tested for NO gas concentrations from 5 ppm to 50 ppm and showed reversible and stable response at temperatures up to 450/spl deg/C.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124753681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezolectric 2D micro scanner for minimally invasive therapy fabricated using femtosecond laser ablation 用飞秒激光消融制造的用于微创治疗的压电二维微扫描仪
N. Kikuchi, Y. Haga, M. Maeda, W. Makishi, M. Esashi
{"title":"Piezolectric 2D micro scanner for minimally invasive therapy fabricated using femtosecond laser ablation","authors":"N. Kikuchi, Y. Haga, M. Maeda, W. Makishi, M. Esashi","doi":"10.1109/SENSOR.2003.1215545","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215545","url":null,"abstract":"Piezoelectric two dimensional (2D) micro scanner was developed for medical laser scanning micro tool that is inserted in the human body and observes tissue microstructures optically and scans laser for treatment. The structure of developed micro scanner consists of three piezoelectric unimorph cantilevers, a mirror, three flexible joints and a pivot. The joints link the end of the unimorph cantilevers with the mirror. The size of the micro scanner part is 1.6 mm/spl times/5.0 mm, and the thickness is 100 /spl mu/m. The mirror tilted in two dimensions and maximum tilting angle was 2.23 degree when 60 V was applied. The 2D scanner and optical system will be packaged in a tube of 2 mm diameter which can be inserted in a working channel of a conventional endscope.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129779562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Surface magnetic flux imager using CMOS three-phase lock-in camera 表面磁通成像仪采用CMOS三相锁相相机
S. Ando
{"title":"Surface magnetic flux imager using CMOS three-phase lock-in camera","authors":"S. Ando","doi":"10.1109/SENSOR.2003.1215314","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215314","url":null,"abstract":"This paper proposes a new method of magneto-optical imaging which can observe the distribution of both amplitude and phase of AC magnetic field using the lock-in detection by means of a three-phase correlation image sensor (3PCIS). We successfully developed 64/spl times/64 and 100/spl times/100 devices using a multi-user CMOS process. We applied the imaging system to the leakage flux inspection of steel plates. It could observe amplitude and phase (direction and delay) of vertical flux components. The imager was also shown to provide rich clues for the horizontal flux components through observing fine movements of domain wall.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127434143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si-based micro probe card with sharp knife-edged tips combined metal deposition 硅基微探针卡与锋利的刀尖结合金属沉积
Younghak Cho, T. Kuki, Y. Fukuta, H. Fujita, B. Kim
{"title":"Si-based micro probe card with sharp knife-edged tips combined metal deposition","authors":"Younghak Cho, T. Kuki, Y. Fukuta, H. Fujita, B. Kim","doi":"10.1109/SENSOR.2003.1215588","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215588","url":null,"abstract":"This paper presents the micro-machined cantilever type MEMS probe card with a special shape of tips in single crystal silicon. The probe cantilevers including the sharp tip are formed with anisotropic KOH etching and LOCOS, and the tips are deposited with Cr, Au, and W. This probe can endure enough force because both of tip and cantilever are entirely fabricated by single crystal silicon, and the specific shape of sharp probe tip was fabricated to break the oxidized surface of the IC chip. This probe is also expected to have a long life-time and enough tip hardness since the end of tip is coated with hard metal of tungsten (W). A novel process for the micro machined probe card with a sharp tip formation is developed and the micro probe arrays with 40 /spl mu/m in pitch are also realized.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127160576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A poly-Si thermoelectric cooling device fabricated by surface micromachining technology 一种表面微加工技术制备的多晶硅热电冷却装置
J. Lin, H.J.H. Chen, I. Huang, S.R.S. Huang
{"title":"A poly-Si thermoelectric cooling device fabricated by surface micromachining technology","authors":"J. Lin, H.J.H. Chen, I. Huang, S.R.S. Huang","doi":"10.1109/SENSOR.2003.1216957","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1216957","url":null,"abstract":"In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about /spl sim/40/spl times/40 (/spl mu/m/sup 2/) and there are about /spl sim/62,500 elements in 1 (cm/sup 2/) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15/spl deg/C reduction from the surrounding environment under 80 mA current drive.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126938578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental investigation of electrokinetically generated in-plane vorticity in a microchannel 微通道内电动涡量的实验研究
W. Hau, L. Lee, Y.-K. Lee, M. Wong, Y. Zohar
{"title":"Experimental investigation of electrokinetically generated in-plane vorticity in a microchannel","authors":"W. Hau, L. Lee, Y.-K. Lee, M. Wong, Y. Zohar","doi":"10.1109/SENSOR.2003.1215557","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215557","url":null,"abstract":"Electrokinetic generation of micro-flow patterns has advanced in recent years and received significant attention due to promising applications in biotechnology. Basic flow fields like bi-directional shear and out-of-plane vortices have been generated electrokinetically in microchannel liquid flow using various surface-charge patterns. In-plane vortex flows present a higher challenge since positive and negative charge regions on the same surface are required. Utilizing a newly-developed polymer-coating technology, the fabrication and characterization of microchannel devices with a variety of charge patterns are reported. Pairs of in-plane counter-rotating vortices or serpentine-like vortical motion have been observed depending on the absence or presence of a mean flow. The experimental results have been found to be consistent with CFD computations using a commercial code.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"1802 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127963768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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