A poly-Si thermoelectric cooling device fabricated by surface micromachining technology

Abstract

In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about /spl sim/40/spl times/40 (/spl mu/m/sup 2/) and there are about /spl sim/62,500 elements in 1 (cm/sup 2/) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15/spl deg/C reduction from the surrounding environment under 80 mA current drive.