一种表面微加工技术制备的多晶硅热电冷却装置

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI:10.1109/SENSOR.2003.1216957

J. Lin, H.J.H. Chen, I. Huang, S.R.S. Huang

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引用次数: 3

摘要

本文首次提出了一种采用表面微加工技术制作的新型片上集成多晶硅热电冷却装置。桥式Peltier元件的面积约为/spl sim/40/spl倍/40 (/spl mu/m/sup 2/)， 1 (cm/sup 2/)芯片面积约有/spl sim/62,500个元件。采用牺牲氧化物释放桥式珀尔帖元件，可以最大限度地降低寄生热传导效应。冷却模式TE器件在80ma电流驱动下可实现与周围环境的5-15/spl度/C降低。

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A poly-Si thermoelectric cooling device fabricated by surface micromachining technology

In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about /spl sim/40/spl times/40 (/spl mu/m/sup 2/) and there are about /spl sim/62,500 elements in 1 (cm/sup 2/) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15/spl deg/C reduction from the surrounding environment under 80 mA current drive.

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TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)

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