TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)最新文献_第5页

Analysis of piezoresistance in n-type 6H SiC for high-temperature mechanical sensors 高温机械传感器用n型6H SiC压阻分析

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1215584

T. Toriyama, S. Sugiyama

引用次数: 6

Fabrication of high aspect ratio through-wafer vias in CMOS wafers for 3-D packaging applications 用于三维封装应用的高纵横比CMOS晶圆通孔的制造

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1217101

F. E. Rasmussen, J. Frech, M. Heschel, O. Hansen

引用次数: 6

Simulating nonlinear dynamics and chaos in a MEMS cantilever using poincare mapping 用庞加莱映射模拟MEMS悬臂梁的非线性动力学和混沌

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1216959

S. Liu, A. Davidson, Q. Lin

引用次数: 22

Metal to glass anodic bonding for microsystems packaging 微系统封装用金属与玻璃阳极键合

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1217142

D. Briand, P. Weber, N. D. de Rooij

引用次数: 8

Nanopore transducers: prospects for single molecule electrophoresis 纳米孔传感器:单分子电泳的前景

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1215290

D. Branton

引用次数: 1

Integrated optical diffractive micrograting-based injection force sensor 基于集成光学衍射微光栅的注入力传感器

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1216949

X.J. Zhang, S. Zappe, R. W. Bernstein, O. Sahin, C.C. Chen, M. Fish, M. Scott, O. Solgaard

引用次数: 20

Piezoactuator-integrated monolithic microstage with six degrees of freedom 压电致动器集成的六自由度单片微台

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1217066

Deyuan Zhang, T. Ono, M. Esashi

{"title":"Piezoactuator-integrated monolithic microstage with six degrees of freedom","authors":"Deyuan Zhang, T. Ono, M. Esashi","doi":"10.1109/SENSOR.2003.1217066","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1217066","url":null,"abstract":"In comparison with miniature XY-stage in terms of driving methods: electrostatic, electromagnetic and piezoelectric actuators, the piezoelectric actuators have high area efficiency but no machinability by conventional microfabrication techniques. In this paper we have proposed the novel fabrication method of a double-layered piezo-stack actuator made from a monolithic PZT plate based on a planer fabrication method, and integrated the actuators into a XYZ-stage with six degrees of freedom, i.e., X, Y, X, /spl theta//sub x/, /spl theta//sub y/ and /spl theta//sub z/ directions. The stacked piezoactuators were formed on the both side of the PZT plate. The double stacked-piezoactuators, which are arranged around the stage, can stretch in plane or bend to Z-direction. The fabrication method includes dicing, electroplating, and laser machining. After making grooves by dicing, metal electroplating was performed and buried Ni into the grooves, which was done on both side of the PZT plate. After polishing the surface, metal electrodes were formed on an insulating photosensitive polyimide layer. Finally, the complete structure was defined by laser machining. The test results show that the X direction displacement of the actuation arms was about 2 /spl mu/m when 40 V was applied to both of double-layered piezo-stacked actuators. The Z direction displacement of the actuation beam was about 2 /spl mu/m when 40 V was only applied to one stacked actuator. These results show the possibility of the microstage with six degrees of freedom.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117048054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

Diamond AFM probe with piezoelectric sensor and actuator 带有压电传感器和驱动器的金刚石AFM探针

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1215363

T. Shibata, K. Unno, E. Makino

{"title":"Diamond AFM probe with piezoelectric sensor and actuator","authors":"T. Shibata, K. Unno, E. Makino","doi":"10.1109/SENSOR.2003.1215363","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1215363","url":null,"abstract":"In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Finite element analysis of the thermal characteristics of MEMS switches MEMS开关热特性的有限元分析

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1215341

Xinxin Yan, N. McGruer, G. G. Adams, S. Majumder

引用次数: 16

Integrated RF-MEMS switch based on a combination of thermal and electrostatic actuation 基于热和静电驱动相结合的集成RF-MEMS开关

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI: 10.1109/SENSOR.2003.1217115

Philippe Robert, Daniel Saias, C. Billard, S. Boret, N. Sillon, Catherine Maeder-Pachurka, P. L. Charvet, Guillaume Bouche, Pascal Ancey, P. Berruyer

{"title":"Integrated RF-MEMS switch based on a combination of thermal and electrostatic actuation","authors":"Philippe Robert, Daniel Saias, C. Billard, S. Boret, N. Sillon, Catherine Maeder-Pachurka, P. L. Charvet, Guillaume Bouche, Pascal Ancey, P. Berruyer","doi":"10.1109/SENSOR.2003.1217115","DOIUrl":"https://doi.org/10.1109/SENSOR.2003.1217115","url":null,"abstract":"We have demonstrated the feasibility of a fully integrated RF microswitch. It is based on a combination of thermal actuation and electrostatic latching hold. This method enables to combine the advantages of both actuation modes : the low voltage power supply and high reliability of the thermal actuation, and the low power consumption of the electrostatic latching. An analytical model was developed in order to predict the shape of the beam versus the temperature. An algorithm was also developed in order to evaluate the damping behavior of the switch taking the beam shape deflection into account. A design composed of a 400/spl times/50 /spl mu/m silicon nitride clamped beam was selected. The beam includes titanium nitride heating resistors, and aluminum blocks for bimorph actuation. The RF lines and the contacts are made of a 1 /spl mu/m thick gold layer. The 3 /spl mu/m air gap is fabricated using a polymer sacrificial layer. The driver of the switch, for the thermal actuation and the electrostatic latching, was manufactured in a 0.25 /spl mu/m BiCMOS technology. For each activation, the switch requires a 20 mA current under 2 V during /spl sim/200 /spl mu/s. For the electrostatic hold, the MEMS was designed for less than 10 volts. Due to residual stress in the beam material, a 5 V shift of the hold voltage has been experimentally observed on first prototypes. Reliability of thermal actuation has been tested with more than 10/sup 9/ cycles without any failure or contact degradation. Very interesting RF performances were measured, even with standard wafer (15/spl Omega/.cm) : -57 dB isolation and 0.18 dB insertion loss at 2 GHz.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123213154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 62