{"title":"带有压电传感器和驱动器的金刚石AFM探针","authors":"T. Shibata, K. Unno, E. Makino","doi":"10.1109/SENSOR.2003.1215363","DOIUrl":null,"url":null,"abstract":"In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Diamond AFM probe with piezoelectric sensor and actuator\",\"authors\":\"T. Shibata, K. Unno, E. Makino\",\"doi\":\"10.1109/SENSOR.2003.1215363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.\",\"PeriodicalId\":196104,\"journal\":{\"name\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2003.1215363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2003.1215363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Diamond AFM probe with piezoelectric sensor and actuator
In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.