{"title":"Implementation of a W-CDMA direct-conversion IQ modulator module including evaluation of chip-package-board interactions","authors":"F. Han, J. Wu, T. Horng, J. Lin, C.C. Tu","doi":"10.1109/ECTC.2006.1645891","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645891","url":null,"abstract":"This paper presents a W-CDMA direct-conversion IQ modulator MMIC design that employs a new technique to generate the 90deg phase shift with low implementation loss. The package and PCB effects on the implemented IQ modulator MMIC when further developed as a board module are studied. The package and PCB interconnects are analyzed using the 3-D EM simulation tool and transformed into the equivalent-circuit elements for co-simulation with the IQ modulator MMIC. The degradation of error vector magnitude and sideband suppression due to the presence of package and PCB can be well predicted by the co-simulation results and then verified by the final measurement results","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124132508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interfacial strength assessment of Cu-epoxy system by atomic force microscope","authors":"C. Wong, E. V. Kuznetsov, Bing Xu, M. Yuen","doi":"10.1109/ECTC.2006.1645692","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645692","url":null,"abstract":"This paper presents a novel nano-scale interfacial covalent bond measurement method by atomic force microscopy (AFM) with reference to the adhesion of self-assembly monolayer on epoxy/copper systems. Covalent bond strength measurements were conducted using AFM for self assembly monolayer (SAM) coated copper (Cu) tips on epoxy after epoxy has been cured at its curing temperature. In-situ curing of Cu-epoxy force measurement simulates situation of epoxy molding compound (EMC) curing inside conventional transfer molding process. The Cu-SAM-epoxy system testing provides a good testing platform for evaluating the performance of various SAM materials as an adhesion promoter. Adhesion enhancement at the interface has been achieved by surface modification of Cu surface with thiol solution. Normalized adhesion strength was reported as measured adhesion force divided by tip epoxy contact area. It illustrated that with thiol treatment, Cu-epoxy interfacial adhesion strength has been enhanced from 2.83plusmn0.07times 10-5 nN/nm2 and 5.38plusmn2.48times10-5 nN/nm2","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124266292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Synchrotron radiation based X-ray micro-diffraction study on reliability issues of solder joints in electronic packaging technology","authors":"J. Suh, J. Nah, K. Tu, N. Tamura","doi":"10.1109/ECTC.2006.1645924","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645924","url":null,"abstract":"Orientation distribution of Cu<sup>6</sup>Sn<sup>5</sup> and its relationship with orientation of substrate Cu was studied with synchrotron based micro X-ray diffraction. We have obtained Laue spots both from Cu<sup>6</sup>Sn<sup>5</sup> and Cu at the same time. From the Laue pattern, orientation distribution maps of Cu<sup>6</sup>Sn<sup>5 </sup> and Cu were obtained. Orientations Cu<sup>6</sup>Sn<sup>5</sup> scallops had strong dependence to that of Cu. [001] direction of Cu<sup>6</sup>Sn<sup>5</sup> was always parallel to [110] of Cu, to minimize misfit. It was also found that there are loses in its texture as reflow time increases","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123612507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improving mold compound adhesion to Ni/Pd/Au pre-plated lead frames","authors":"G. Kim, James Hurley, A. Dhoble, S. Avdić","doi":"10.1109/ECTC.2006.1645845","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645845","url":null,"abstract":"A unique approach for investigating new epoxy mold compounds with improved adhesion to Ni/Pd/Au leadframes is described. This approach consists of three parts: 1) the calculation of polar gammap and dispersive gammad surface free energy components of various model epoxy mold compounds and Ni/Pd/Au-plated leadframes, respectively, derived from dynamic contact angle measurements at room temperature using water and diiodomethane, 2) interpretation of the results in terms of the geometric mean theory of Owens, Wendt, Rabel and Kaelble, which includes the construction of the wetting envelope for the Ni/Pd/Au leadframe under various environmental conditions, and 3) a measurement technique for the true contact angle thetas and hence the thermodynamic work of adhesion Wa according to the Young-Dupre equation compared to actual adhesion. The calculated thermodynamic work of adhesion was compared to actual adhesion values obtained using a modified die shear adhesion test. Reasonable correlation was obtained between the two tests, allowing the contact angle measurement to be adapted as a rapid screening tool for identifying promising leadframe and EMC material candidates. Actual epoxy molding compounds are formulated based on information from the wetting angle experiments and die-shear adhesion tests of unfilled model compounds. Fully-formulated epoxy molding compounds are characterized using traditional tab-pull adhesion tests (Ju et al., 2004) and thermal cycle reliability tests on actual leaded packages. Further results from the surface energies, the resulting adhesion strengths, and the interfacial shear stresses between the EMC and the leadframe are discussed","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"63 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121953737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Basat, S. Bhattacharya, A. Rida, S. Johnston, L. Yang, M. Tentzeris, J. Laskar
{"title":"Fabrication and assembly of a novel high-efficiency UHF RFID tag on flexible LCP substrate","authors":"S. Basat, S. Bhattacharya, A. Rida, S. Johnston, L. Yang, M. Tentzeris, J. Laskar","doi":"10.1109/ECTC.2006.1645832","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645832","url":null,"abstract":"In this paper, design, fabrication, assembly and testing of unique high read-range high-efficiency (95%) radio frequency identification (RFID) antenna for the 915 MHZ UHF band are discussed. The exceptional characteristics of the RFID are investigated in terms of antenna-IC matching and radiation efficiency. The 915 MHz passive tag is a 3\" times 3\" omnidirectional tag and yielded a read range of 31 feet compared to a 4\" times 4\" leading commercial design of 26 feet tested range in lab. This tag also possesses higher read power range (-7dBm to 30 dBm) than the leading commercial design (-5dBm to 30 dBm). The proposed RFID antenna was fabricated on 50 micron thick liquid crystal polymer (LCP) substrate and the read range of the proposed RFID tags was experimentally verified. A large format LCP sheet (300 mm times 300 mm) was used for antenna fabrication and the assembly of the IC was done using low temperature lead free solder alloys that are compatible with the heat distortion temperature of the LCP","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122533431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li Li, J. Xue, M. Ahmad, M. Brillhart, Min Ding, G. Lu, P. Ho
{"title":"Materials effects on reliability of FC-PBGA packages for Cu/low-k chips","authors":"Li Li, J. Xue, M. Ahmad, M. Brillhart, Min Ding, G. Lu, P. Ho","doi":"10.1109/ECTC.2006.1645869","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645869","url":null,"abstract":"Reliability of the flip-chip plastic ball grid array (FC-PBGA) packages is highly dependent on the properties of the constituent components and the interface formed between them. The relative mechanical compliances and thermal mismatch between the silicon chip, the underfill material and the organic laminate substrate are particularly important to the design and performance the package. Strong coupling between the chip and the substrate can cause chip cracking, delamination of interlayer dielectrics (ILD), delamination of underfill and problems associated with BGA interconnection when the package is assembled to a printed circuit board (PCB). The problem became more severe as we migrate to the 90nm and 65nm silicon technology nodes where low-k ILD is widely used. Combined experimental and modeling methods were used to investigate the thermo-mechanical behavior and failure mechanisms controlling FC-PBGA package reliability. Materials effect of new generation of underfill materials was first studied for minimizing the chip-substrate thermo-mechanical coupling. Fully assembled FC-PBGA packages with various underfill materials were evaluated following a carefully designed analysis and screening flow. Thermo-mechanical response of the package was measured and analyzed using high resolution moire interferometry and numerical modeling techniques. Four-point bending test was also used to characterize interfacial fracture energy for the critical interface between die passivation and underfill material. The experiments and modeling were correlated with the JEDEC standard component-level reliability testing results. The combined experimental and numerical analysis confirmed our selection of the substrate, underfill and other package materials and demonstrated that significantly improved reliability of the flip-chip PBGA packages can be achieved by controlling thermo-mechanical coupling of the silicon die and the package, and by controlling various important interfaces within the package","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121684552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Tummala, P. Markondeya Raj, A. Aggarwal, G. Mehrotra, S. Koh, S. Bansal, Tan Teck Tiong, C. Ong, J. Chew, K. Vaidyanathan, V. Srinivasa Rao
{"title":"Copper interconnections for high performance and fine pitch flip chip digital applications and ultra-miniaturized RF module applications","authors":"R. Tummala, P. Markondeya Raj, A. Aggarwal, G. Mehrotra, S. Koh, S. Bansal, Tan Teck Tiong, C. Ong, J. Chew, K. Vaidyanathan, V. Srinivasa Rao","doi":"10.1109/ECTC.2006.1645632","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645632","url":null,"abstract":"Copper is an excellent candidate material for next generation of chip-package interconnections because of its high electrical and thermal conductivities, good mechanical properties at assembly and operating temperatures and well-established infrastructure to integrate with back-end processes with electroplating technology downscalable to nanoscale. This technology can also accommodate the increasing I/O density of future microprocessors with the best electrical and mechanical performance. In addition, embedment of active components with chip-last approach being proposed by Georgia Tech PRC can also be realized with the shortest interconnections resulting in performance and miniaturization comparable to chip-first approach. There is an increasing trend to replace solders with copper because of these advantages. In this paper, we describe the current status of copper bumping and copper interconnection and assembly technologies and show our future strategy","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124753492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Lacsamana, M. Mena, R. Navarro, N. Kuan, T. R. Spooner
{"title":"Wafer thinning solution for wafer-level-capped MEMS devices","authors":"E. Lacsamana, M. Mena, R. Navarro, N. Kuan, T. R. Spooner","doi":"10.1109/ECTC.2006.1645793","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645793","url":null,"abstract":"A wafer backgrinding solution is demonstrated to successfully thin wafer-level-capped MEMS accelerometers down to 250mum thickness. Capped MEMS wafers are prepared for manufacturing by using wafer protective tapes. Holes are punched on layers of tape, matching the thickness of the caps, that serve as gap fills in-between caps and through the wafer edge. The capped wafers are fully supported while processing using standard backgrinding machines. Manufacturing issues and corresponding fixes to attain satisfactory result are also discussed. The thinned capped accelerometer device is packaged in a 4times4mm leadframe chip scale package (LFCSP) to check its performance","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125049355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fluxless bondings of silicon to alumina substrate using electroplated eutectic Au-Sn solder","authors":"J.S. Kim, W. Choi, A. Shkel, C.C. Lee","doi":"10.1109/ECTC.2006.1645913","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645913","url":null,"abstract":"Large 6 mm times 9 mm silicon dice have been successfully bonded on alumina substrate with electroplated Au80Sn20 eutectic alloy. Eutectic AuSn is one of the best known hard solders having excellent fatigue-resistance and mechanical properties. A fluxless bonding process in 50 militorrs of vacuum environment is presented. Vacuum environment is employed to prevent tin oxidation during the process. The oxygen content is expected to be reduced by a factor of 15,200, comparing to bonding in air. One of the challenges in silicon-to-alumina bonding is the large mismatch in thermal expansion between silicon of 2.7 times 10-6 ppm/degC and alumina of 7 times 10 -6 ppm/degC. Electroplating method is used to build multi-layer solder. It is an economical alternative to vacuum deposition method and can produce thick solders. Joints fabricated are examined using scanning electron microscope (SEM), and energy dispersive X-ray spectroscopy (EDX). It is found that proper bonding condition is needed to turn the stacked layers into a uniform AuSn eutectic alloy. Nearly void-free joints are achieved and confirmed by a scanning acoustic microscope (SAM). To evaluate the reliability of the solder joint and the bonded structure, samples go through thermal cycling test to determine failure modes. Microstructure changes of the solder joints during thermal cycling test are also investigated","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122165291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Liu, D. Desbiens, S. Irving, T. Luk, C. Lolar, Yumin Liu, Qiuxiao Qian
{"title":"Systematic evaluation of die thinning application in a power SIPs by simulation","authors":"Y. Liu, D. Desbiens, S. Irving, T. Luk, C. Lolar, Yumin Liu, Qiuxiao Qian","doi":"10.1109/ECTC.2006.1645773","DOIUrl":"https://doi.org/10.1109/ECTC.2006.1645773","url":null,"abstract":"In this paper, a lead frame based system in package (SIP) for power management is examined. This package is built using multiple die types including power IGBTs, diodes, and IC controllers. To maximize product performance the power components use an ultra thin back grind. Thin dies minimize RDS(on), maximize thermal performance, and minimize the board standoff height by allowing the package to be thinner. However, the ultra thin die could be a potential risk for die cracking if it is done without careful evaluation, especially for die thickness as thin as 90 mum and 50 mum. So it is critical to understand the impact of thinning dies on the reliability of the product in assembly manufacture and vary reliability tests. Modeling and simulation with a smaller amount of empirical testing is a good way to evaluate this thin die application quickly and at a lower cost. Therefore, the objective of this paper is to fully investigate the thin die application in a power SIP with systematic simulation and analysis before real application. A large complicated and advanced 3D FEA model framework is developed for the SIP. The major modeling and evaluation work is categorized into two areas: One is to check the impact of the thin die on different assembly processes. The other is to simulate the major reliability tests such as temperature cycle (TMCL) and component-level reflow process. Comprehensive evaluation and analysis of the modeling and simulation results for the thin die application to a Fairchild power SIP are presented","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131368896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}