Copper interconnections for high performance and fine pitch flip chip digital applications and ultra-miniaturized RF module applications

R. Tummala, P. Markondeya Raj, A. Aggarwal, G. Mehrotra, S. Koh, S. Bansal, Tan Teck Tiong, C. Ong, J. Chew, K. Vaidyanathan, V. Srinivasa Rao
{"title":"Copper interconnections for high performance and fine pitch flip chip digital applications and ultra-miniaturized RF module applications","authors":"R. Tummala, P. Markondeya Raj, A. Aggarwal, G. Mehrotra, S. Koh, S. Bansal, Tan Teck Tiong, C. Ong, J. Chew, K. Vaidyanathan, V. Srinivasa Rao","doi":"10.1109/ECTC.2006.1645632","DOIUrl":null,"url":null,"abstract":"Copper is an excellent candidate material for next generation of chip-package interconnections because of its high electrical and thermal conductivities, good mechanical properties at assembly and operating temperatures and well-established infrastructure to integrate with back-end processes with electroplating technology downscalable to nanoscale. This technology can also accommodate the increasing I/O density of future microprocessors with the best electrical and mechanical performance. In addition, embedment of active components with chip-last approach being proposed by Georgia Tech PRC can also be realized with the shortest interconnections resulting in performance and miniaturization comparable to chip-first approach. There is an increasing trend to replace solders with copper because of these advantages. In this paper, we describe the current status of copper bumping and copper interconnection and assembly technologies and show our future strategy","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"56th Electronic Components and Technology Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2006.1645632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34

Abstract

Copper is an excellent candidate material for next generation of chip-package interconnections because of its high electrical and thermal conductivities, good mechanical properties at assembly and operating temperatures and well-established infrastructure to integrate with back-end processes with electroplating technology downscalable to nanoscale. This technology can also accommodate the increasing I/O density of future microprocessors with the best electrical and mechanical performance. In addition, embedment of active components with chip-last approach being proposed by Georgia Tech PRC can also be realized with the shortest interconnections resulting in performance and miniaturization comparable to chip-first approach. There is an increasing trend to replace solders with copper because of these advantages. In this paper, we describe the current status of copper bumping and copper interconnection and assembly technologies and show our future strategy
铜互连用于高性能和细间距倒装芯片数字应用和超小型射频模块应用
铜是下一代芯片封装互连的优秀候选材料,因为它具有高导电性和导热性,在组装和操作温度下具有良好的机械性能,并且具有完善的基础设施,可以与后端工艺集成,并可扩展到纳米级的电镀技术。该技术还可以适应未来微处理器不断增加的I/O密度,并具有最佳的电气和机械性能。此外,佐治亚理工学院PRC提出的用芯片最后的方法嵌入有源元件也可以用最短的互连来实现,从而在性能和小型化方面与芯片优先的方法相当。由于这些优点,用铜代替焊料的趋势越来越大。本文介绍了铜碰撞和铜互连与组装技术的现状,并提出了未来的发展策略
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信