1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)最新文献_第4页

Investigation of the intrinsic SiO/sub 2/ area dependence using TDDB testing 利用TDDB测试研究SiO/sub / area的内在依赖关系

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660275

J. Prendergast, N. Finucane, J. Suehle

{"title":"Investigation of the intrinsic SiO/sub 2/ area dependence using TDDB testing","authors":"J. Prendergast, N. Finucane, J. Suehle","doi":"10.1109/IRWS.1997.660275","DOIUrl":"https://doi.org/10.1109/IRWS.1997.660275","url":null,"abstract":"To date, there has been very little comprehensive work done on the area dependence of MOS capacitors using time dependent dielectric breakdown testing. The area dependence was investigated by Sune et al. (Thin Solid Films vol. 185, pp. 347-362, 1990) and it indicated that it existed for Q/sub bd/ and potentially for TDDB. Recent work at IRPS'97 tutorials also indicated the same TDDB dependence but these investigations were limited by either the range of areas investigated or the range of test conditions used. This paper provides a thorough investigation into oxide area dependence over 5 orders of magnitude using multiple temperatures and electric fields in order to understand the breakdown mechanism, failure statistics, and model the area dependency. The paper outlines the structures tested, and the thermal and field acceleration factors generated for different area sizes. It also outlines the reason for the area dependence and indicates how existing models must be modified to account for this dependency when predicting product reliability. The area analysis was conducted on flat P-type capacitors and on some NMOS structures to increase the area spread being investigated. The capacitors and transistors were fabricated on a 0.6 /spl mu/m dual poly dual metal CMOS process with a target deposited oxide thickness of 125 /spl Aring/. The process had been extensively characterized and monitored since release and all monitored lots showed only an intrinsic distribution.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117289412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Isothermal versus standard wafer electromigration test for the characterization of metal systems 金属体系表征的等温与标准晶圆片电迁移试验

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660308

D. Brisbin, T. Turner

{"title":"Isothermal versus standard wafer electromigration test for the characterization of metal systems","authors":"D. Brisbin, T. Turner","doi":"10.1109/IRWS.1997.660308","DOIUrl":"https://doi.org/10.1109/IRWS.1997.660308","url":null,"abstract":"The isothermal electromigration test has recently been introduced as a potential alternative to the SWEAT technique. In the isothermal test, the stress current is adjusted in a feedback loop so that a constant metal line temperature is maintained. This differs from the SWEAT test, where the mean time to failure (MTF) as predicted by Black's equation is the control parameter. Once at the control temperature, the isothermal test can utilize three alternative stress modes: constant power, constant current or constant resistance (temperature). The isothermal test has several important advantages, including: (1) simplicity of implementation; (2) line temperature is directly controlled, so it is easier to avoid the bulk diffusion region; (3) algorithm does not require empirical adjustment of acceleration factors; (4) alternative stress modes are available to optimize performance. The purpose of this paper is to compare the isothermal and SWEAT tests experimentally in terms of MTF and standard deviation, and to evaluate the three different isothermal test modes of constant power, constant current or constant resistance.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127642751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Charge pumping for DRAM retention diagnostic 用于DRAM保留诊断的电荷泵送

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660295

J. Adkisson, R. Divakaruni, J. Slinkman

引用次数: 0

HCI lifetime enhancement by double implanted S/D (DISD) of Nch MOSFET in 0.25 /spl mu/m CMOS technology 在0.25 /spl μ m CMOS技术下，Nch MOSFET双植入S/D (DISD)提高HCI寿命

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660280

D. Wu, S. Luning, D. Ju, N. Kepler

引用次数: 0

Acceleration factors of PMOS hot carrier degradation PMOS热载流子降解的加速因子

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660274

H. Katto

引用次数: 0

Effect of electronic corrections on the thickness dependence of thin oxide reliability 电子校正对薄氧化物可靠性厚度依赖性的影响

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660281

G. Alers, A. Oates, D. Monroe, K. Krisch, B. Weir

{"title":"Effect of electronic corrections on the thickness dependence of thin oxide reliability","authors":"G. Alers, A. Oates, D. Monroe, K. Krisch, B. Weir","doi":"10.1109/IRWS.1997.660281","DOIUrl":"https://doi.org/10.1109/IRWS.1997.660281","url":null,"abstract":"The thickness dependence of constant voltage lifetime tests for thin oxides in the range of 50-125 /spl Aring/ show an apparent factor of 100 enhancement in the lifetime of 50 /spl Aring/ oxides relative to the 125 /spl Aring/ oxides at a fixed electric field. However, when corrections are made for the distribution of electrons at the silicon interface, including depletion in the silicon and quantum-mechanical screening effects, then this apparent enhancement is reduced and all oxides have similar lifetimes at a fixed field. This rescaling of oxide reliability demonstrates the importance of accurate determination of the electric field and oxide voltage in thin oxides, and that oxide reliability is not significantly affected by thickness down to 50 /spl Aring/, depending only on field. We compare different techniques for determining the effective thickness using current-voltage or capacitance-voltage curves. We show that accurate estimates of the electric field can be obtained from integration of the capacitance-voltage relation of the capacitor. When electric fields are calculated using C-V curves, a consistent set of extrapolation parameters can be obtained for all thicknesses.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"364 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132791846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A new technique to extract TDDB acceleration parameters from fast Q/sub bd/ tests 一种从快速Q/sub /测试中提取TDDB加速度参数的新技术

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660287

Y. Chen, J. Suehle, B. Shen, J. Bernstein, C. Messick, P. Chaparala

引用次数: 0

The non-uniqueness of breakdown distributions in silicon oxides 硅氧化物中击穿分布的非唯一性

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.661871

J. C. Jackson, O. Oralkan, T. Robinson, D. Dumin, G. Brown

引用次数: 6

Confirmation of a predictive process dependent model of oxide charging 氧化物充注的预测过程依赖模型的确认

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI: 10.1109/IRWS.1997.660309

J. F. Conley

引用次数: 1