Nanotechnology最新文献_第8页

Ultrafast carrier dynamics of mono- and few-layer WS₂through NaCl assisted chemical vapor deposition growth. 通过NaCl辅助化学气相沉积生长的单层和多层WS2的超快载流子动力学。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-20 DOI: 10.1088/1361-6528/adf8f4

Yagya Bahadur Woli, Himal Pokhrel, Qianshi Fu, Bryson Krause, Shawn David Pollard, Thang Ba Hoang

{"title":"Ultrafast carrier dynamics of mono- and few-layer WS2through NaCl assisted chemical vapor deposition growth.","authors":"Yagya Bahadur Woli, Himal Pokhrel, Qianshi Fu, Bryson Krause, Shawn David Pollard, Thang Ba Hoang","doi":"10.1088/1361-6528/adf8f4","DOIUrl":"10.1088/1361-6528/adf8f4","url":null,"abstract":"NaCl has widely been used as a seeding promoter for chemical vapor deposition of large-scale 2D transition metal dichalcogenides. In this work, we report a study of the influence of NaCl on the growth and optical properties of layered CVD-grown WS2using steady-state and time-resolved Kerr rotation measurements at room temperature. Strong photoluminescence (PL) signals from single flakes grown with a low NaCl content indicates direct band-gap emission, whereas flakes grown with higher amounts of NaCl exhibit red-shifted, weaker PL. Raman measurements from single flakes also indicate that WS2grown with higher NaCl amounts result in multilayered structures, while lower NaCl quantities yield monolayer WS2. Ultrafast carrier decay measurements from single flakes also indicate a NaCl-dependent on the valley exchange interaction component (<10 ps) and slower decay components (>50 ps), attributed to a combination of phenomena, such as the band gap transitioning from direct to indirect and defect-related localized states. Our study provides insight into the influence of seeding promoters in layered CVD-grown WS2in particular and 2D transition metal dichalcogenides in general.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144799732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lithium nucleation modulated by light induced nanowelding to improve lithium metal anode collectors. 光诱导纳米焊接调制锂成核以改善锂金属阳极收集器。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-19 DOI: 10.1088/1361-6528/adf95a

Yuan Liu, Bo Song, Chao Wang, Che Zhang, Peng Dong

引用次数: 0

Deep reinforcement learning for identifying the global minima of platinum nanoclusters. 基于深度强化学习的铂纳米簇全局最小值识别。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf64b

Muhammad Usman, Muhammad Umar Farooq, Fuyi Chen

{"title":"Deep reinforcement learning for identifying the global minima of platinum nanoclusters.","authors":"Muhammad Usman, Muhammad Umar Farooq, Fuyi Chen","doi":"10.1088/1361-6528/adf64b","DOIUrl":"10.1088/1361-6528/adf64b","url":null,"abstract":"Prediction of stable nanocluster structures remains a significant challenge in materials and nanocluster research due to the complex nature of potential energy surfaces (PES). To overcome this complexity, a novel deep reinforcement learning (DRL) framework was employed to efficiently scan the PES and identify the global minimum of the Pt13nanocluster alongside other low-energy configurations. The DRL agent iteratively learns to generate energetically favorable configurations by adjusting atomic positions based on feedback from a reward function designed to promote structural stability and discourage unrealistic geometries, such as overlapping or dissociating atoms. Starting from randomized initial structures, the model successfully identifies the most stable configuration of Pt13with icosahedral (Ih) symmetry, and the framework reveals 25 distinct low-energy isomers. The successful identification of a stable structure verifies the effectiveness of the DRL framework. Additionally, Density Functional Theory calculations confirm the stability of the Pt13nanocluster by finding the cohesive energy. The negative cohesive energy confirms the stability, and thermodynamic stability was also assessed at 300 K. The charge, electron localization function, electron density, d-band center, and total density of states indicate that Pt13nanoclusters exhibit the ideal electronic fingerprint of a highly active nano-catalyst. To further check the DRL framework's adaptability, we performed experiments on Pt10and Pt18. This study highlights the efficacy of DRL in navigating complex energy landscapes, predicting stable nanocluster configurations, and providing a robust methodology for optimizing nanoclusters.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144760577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sb₂Se₃microwires/ZnO nanoparticles heterojunction for high performances self-powered photodetector. 用于高性能自供电光电探测器的sb2se3微线/ZnO纳米颗粒异质结。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf7af

Zhengtao Lu, Zhiyong Gao, Lin Sun, Pingping Yu

{"title":"Sb2Se3microwires/ZnO nanoparticles heterojunction for high performances self-powered photodetector.","authors":"Zhengtao Lu, Zhiyong Gao, Lin Sun, Pingping Yu","doi":"10.1088/1361-6528/adf7af","DOIUrl":"10.1088/1361-6528/adf7af","url":null,"abstract":"Self-powered photodetectors play a crucial role in technology, garnering attention for their diverse applications. However, most current models face challenges such as reliance on external power, complex fabrication, and inconvenient usability. Sb2Se3presents a promising solution for p-type semiconductors in photovoltaic cells, owing to ideal bandgap and excellent light absorption. In this study, Sb2Se3microwires (MWs) synthesized by hydrothermal method was modified with zinc oxide (ZnO) nanoparticles (NP) to create the Sb2Se3-MW/ZnO NP heterostructure, designed to build a highly efficient photodetector featuring interdigitated electrodes. The Sb2Se3-MW/ZnO NP device exhibits self-powered characteristics and strong photoresponse from 350 to 1000 nm, achieving a photoresponsivity of 120 mA W-1at 368 nm (1.21 mW cm-2), an on/off ratio of 257, and a peak detection rate of 8.93 × 1011Jones. This innovative heterostructure significantly broadens the light response range, proving that the Sb2Se3-MW/ZnO-NP heterojunction is a major step toward high-performance, self-powered optoelectronic devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144789615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Cleaning Endpoint Evaluation Sensor to reliably monitor plasma chamber cleaning. 开发一种清洁终点评估传感器，以可靠地监测等离子室的清洁情况。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf8f6

Suyoung Jang, Dohyeon Kim, Taehyung Kim, Jihyun Kim, Hakmin Kim, Kyongnam Kim

{"title":"Development of a Cleaning Endpoint Evaluation Sensor to reliably monitor plasma chamber cleaning.","authors":"Suyoung Jang, Dohyeon Kim, Taehyung Kim, Jihyun Kim, Hakmin Kim, Kyongnam Kim","doi":"10.1088/1361-6528/adf8f6","DOIUrl":"10.1088/1361-6528/adf8f6","url":null,"abstract":"In this study, a Cleaning Endpoint Evaluation Sensor (CEES) was developed and applied to improve the monitoring accuracy and uniformity control in the cleaning processes for NF3-based remote plasma sources in semiconductor equipment. Although an increase in the chamber pressure increased the density of fluorine radicals and improved the overall etch reactivity, significant cleaning nonuniformity was observed in structurally limited regions, such as the substrate bottom, where the reactive species failed to reach sufficiently. Conventional diagnostic methods such as optical emission spectroscopy (OES) are limited in their ability to assess cleaning completion in such dead volume regions. In contrast, the proposed CEES directly measured the removal status of thin films mimicking actual process residues, providing real-time and spatially resolved endpoint evaluations. The CEES showed a strong correlation with the actual etch behavior and successfully identified regions where cleaning was incomplete, despite OES-based endpoint detection. The results revealed that the CEES can serve as an effective tool for monitoring the cleaning uniformity and determining the true endpoint of plasma-cleaning processes. This approach has the potential for integration into advanced diagnostic platforms to enhance the reliability and efficiency of semiconductor manufacturing.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144799730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of x-ray irradiation on the magnetic and structural properties of gadolinium silicide nanoparticles. x射线辐照对硅化钆纳米颗粒磁性和结构性能的影响。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf7ae

Samantha E Smith, Santiago Bermudez, Pavan Chaitanya, Zoe Boekelheide, Jessika Rojas Marin, Ravi L Hadimani

{"title":"Influence of x-ray irradiation on the magnetic and structural properties of gadolinium silicide nanoparticles.","authors":"Samantha E Smith, Santiago Bermudez, Pavan Chaitanya, Zoe Boekelheide, Jessika Rojas Marin, Ravi L Hadimani","doi":"10.1088/1361-6528/adf7ae","DOIUrl":"10.1088/1361-6528/adf7ae","url":null,"abstract":"Magnetic hyperthermia treatment (MHT) utilizes heat generated from magnetic nanoparticles under an alternating magnetic field for therapeutic applications. Gadolinium silicide (Gd5Si4) has emerged as a promising MHT candidate. However, the impact of high-dose x-ray irradiation on its magnetic behavior remains uncertain. This study examines Gd5Si4nanoparticles exposed to 36 and 72 kGy x-ray irradiation at a high-dose rate (120 Gy min-1). While x-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy confirm no structural or compositional changes, transmission electron microscopy reveals localized lattice distortions, along with observable changes in magnetic properties, as evidenced in magnetization vs. temperature and hysteresis measurements. Despite this, magnetocaloric properties and specific loss power remain unaffected. Our findings confirm the stability of Gd5Si4under high-dose x-ray irradiation, supporting its potential for radiotherapy and magnetocaloric cooling in deep-space applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144789614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring YIG-induced magnetic proximity effect on the evolution of spin-polarized trion state in MoS₂monolayer. 探索yig诱导的磁邻近效应对二硫化钼单层中自旋极化trion态演化的影响。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf7b0

Fang-Mei Chan, Chia-Yun Hsieh, Wun-Jhen Yu, Chun-Wen Chan, Shih-Chu Lin, Wei-Chen Tseng, Yu-Chun Wang, Ssu-Yen Huang, Wen-Hao Chang, Chao-Yao Yang

{"title":"Exploring YIG-induced magnetic proximity effect on the evolution of spin-polarized trion state in MoS2monolayer.","authors":"Fang-Mei Chan, Chia-Yun Hsieh, Wun-Jhen Yu, Chun-Wen Chan, Shih-Chu Lin, Wei-Chen Tseng, Yu-Chun Wang, Ssu-Yen Huang, Wen-Hao Chang, Chao-Yao Yang","doi":"10.1088/1361-6528/adf7b0","DOIUrl":"10.1088/1361-6528/adf7b0","url":null,"abstract":"This study investigates the valley spin-polarization mechanisms in MoS2monolayers interfacing with a sputtered yttrium iron garnet (YIG) film. Structural and spectroscopic characterizations confirm successful MoS2monolayers transfer onto YIG with minimal strain issues but significant electron-doping effect, altering the exciton-trion population in MoS2. Temperature-dependent spin-resolved photoluminescence (SR-PL) measurements reveal both spin accumulation and Zeeman splitting contribute to valley spin-polarization below 50 K, as evidenced by intensity asymmetry and peak splitting in SR-PL spectra. However, as temperature increases to 50 K, peak splitting vanishes, suggesting that spin accumulation starts to dominate valley spin-polarization alone. A detailed temperature-dependent analysis further demonstrates that Zeeman splitting disappears above 40 K, while valley spin-polarization persists up to ∼200 K, confirming that the magnetic proximity effect (MPE) induced spin accumulation at the trion state is the primary mechanism at elevated temperatures. The findings suggest that the MPE may play a crucial role in mediating the different trion configurations together with their symmetry-breaking. This work highlights the intricate interplay among spin accumulation, Zeeman splitting, and observed valley spin-polarization, opening an avenue toward future investigations utilizing gating techniques to control valley spin-polarization in two-dimensional materials.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144789613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacial engineering of Mg₃O(CO₃)₂-bound cobalt nanosheets via one-pot synthesis for PMS-driven water decontamination. mg30 (CO3)2结合钴纳米片的界面工程：pms驱动的水净化。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf85a

Qing Sun, Yongnan Jiang, Jiale Yu, Jiawei Sheng

{"title":"Interfacial engineering of Mg3O(CO3)2-bound cobalt nanosheets via one-pot synthesis for PMS-driven water decontamination.","authors":"Qing Sun, Yongnan Jiang, Jiale Yu, Jiawei Sheng","doi":"10.1088/1361-6528/adf85a","DOIUrl":"10.1088/1361-6528/adf85a","url":null,"abstract":"Antibiotic contamination threatens global water security and public health. Peroxymonosulfate (PMS) activation provides an environmentally sustainable approach for water remediation, but conventional cobalt-based catalysts face low atomic utilization and metal leaching issues. Herein, we developed a novel a CoMg/HMTA composite through a one-step hydrothermal method using hexamethylenetetramine (HMTA) and magnesium salts enable the dispersion of cobalt nanosheets on Mg3O(CO3)2substrates. The alkaline carrier Mg3O(CO3)2not only stabilizes Co sites but also minimizes Co leaching (0.18 mg l-1). The optimized system achieved 99.6% metronidazole (MNZ) degradation in 30 min and maintained >99% efficiency over six cycles, demonstrating superior catalytic performance. This strategy was generalized to Cu and Ni systems, confirming the universal stabilizing role of Mg-based carriers. Mechanistic studies using EPR spectroscopy and quenching tests revealed a multi-level degradation mechanism involving radicals (SO4•-, O2•-) and non-radicals (1O2), showing robust performance in various water matrices. This work provides a scalable platform for designing stable persulfate activators against emerging contaminants.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144794921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Artificial diamond as a next generation material for gas sensors. 人造金刚石作为下一代气体传感器材料。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-14 DOI: 10.1088/1361-6528/adf449

Nipun Sharma, Alexey Kucherik, Dmitriy Buharov, Vlad Samyshkin, Anton Osipov, Bordanov Ilya, Sergey Shchanikov, Mahesh Kumar

{"title":"Artificial diamond as a next generation material for gas sensors.","authors":"Nipun Sharma, Alexey Kucherik, Dmitriy Buharov, Vlad Samyshkin, Anton Osipov, Bordanov Ilya, Sergey Shchanikov, Mahesh Kumar","doi":"10.1088/1361-6528/adf449","DOIUrl":"10.1088/1361-6528/adf449","url":null,"abstract":"Diamond-based gas sensors have drawn a lot of interest because of their remarkable resilience, stability, and sensitivity in harsh conditions. Artificial diamonds have emerged as a cornerstone material in advanced technology due to their exceptional physical, chemical, and optical properties. The wide bandgap, chemical inertness, and superior thermal conductivity of diamonds are utilized by these sensors to provide excellent resistance to extreme temperatures and severe environments. The sensitivity of the sensor to various gases is enhanced by hydrogen-terminated diamond surfaces, which enable p-type surface conductivity through charge transfer interactions. Advances in chemical vapor deposition techniques have increased the availability of high-quality diamond films for microfabricated sensor systems. Applications of diamond in environmental monitoring and industrial safety, with a focus on detecting dangerous gases including CO, NOx, and volatile organic compounds, have been the main focus of the review. This review provides a comprehensive recent report on diamond based gas sensors, emphasizing the comparative analysis of the different diamond structures, challenges associated with them, as well as possible directions for the future. This review is really helpful for researchers looking to employ artificial diamonds in extreme conditions for the detection of gases to develop solutions in an emerging technological context.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144718221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Individual contact resistance in random network carbon nanotube thin-film transistors considering asymmetric properties. 考虑非对称特性的随机网络碳纳米管薄膜晶体管的个体接触电阻。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2025-08-13 DOI: 10.1088/1361-6528/adf752

Hanbin Lee, So-Jeong Park, Jeong Yeon Im, Dae Hwan Kim, Dong Myong Kim, Min-Ho Kang, Sung-Jin Choi

{"title":"Individual contact resistance in random network carbon nanotube thin-film transistors considering asymmetric properties.","authors":"Hanbin Lee, So-Jeong Park, Jeong Yeon Im, Dae Hwan Kim, Dong Myong Kim, Min-Ho Kang, Sung-Jin Choi","doi":"10.1088/1361-6528/adf752","DOIUrl":"10.1088/1361-6528/adf752","url":null,"abstract":"Owing to their excellent electrical and mechanical properties, carbon nanotube thin-film transistors (CNT-TFTs) have emerged as promising candidates for high-performance TFTs. In particular, the long mean free path and quasi-ballistic transport characteristics of charge carriers in CNT make the contact properties a critical factor in device performance. As a result, significant research has been conducted on extracting the contact resistance in CNT-TFTs. However, previous studies have not sufficiently accounted for the asymmetric characteristics of CNT-TFTs. Since CNT-TFTs fabricated using solution-based processes inherently exhibit asymmetric properties, considering the effective gate bias, which reflects the voltage drop across individual contact resistances, is important when analyzing the device characteristics. In this work, we propose a method for accurately extracting individual contact resistances that accounts for these effects in CNT-TFTs. This approach is independent of the contact resistance method (CRM), applicable to large-area devices, and enables accurate threshold voltage extraction under asymmetric contact conditions. We also compare the resistances extracted using the proposed method with those obtained via a method that does not consider the voltage drop across individual contact resistances to analyze the impact of the voltage drop. Finally, using the extracted individual contact resistances, we eliminate the mobility degradation effects caused by the contact resistances and extract the intrinsic mobility. We expect that the proposed technique will serve as a robust approach for accurate characterization, modeling, and simulation of CNT-TFTs and their associated circuits, as it reliably extracts individual contact resistances across various semiconducting CNT purities.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144784864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0