Nanotechnology最新文献_第8页

Isolation by dialysis and characterization of luminescent oxidized carbon nanoparticles from graphene oxide dispersions: a facile novel route towards a more controlled and homogeneous substrate with a wider applicability^. 从氧化石墨烯分散体中通过透析分离和表征发光氧化碳纳米颗粒：一条通向更可控、更均匀、适用性更广的衬底的简单新途径。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-04 DOI: 10.1088/1361-6528/adc608

Francesco Amato, Martina Fazi, Leonardo Giaccari, Sara Colecchia, Giordano Perini, Valentina Palmieri, Massimiliano Papi, Pietro Altimari, Alessandro Motta, Mauro Giustini, Robertino Zanoni, Andrea Giacomo Marrani

{"title":"Isolation by dialysis and characterization of luminescent oxidized carbon nanoparticles from graphene oxide dispersions: a facile novel route towards a more controlled and homogeneous substrate with a wider applicability.","authors":"Francesco Amato, Martina Fazi, Leonardo Giaccari, Sara Colecchia, Giordano Perini, Valentina Palmieri, Massimiliano Papi, Pietro Altimari, Alessandro Motta, Mauro Giustini, Robertino Zanoni, Andrea Giacomo Marrani","doi":"10.1088/1361-6528/adc608","DOIUrl":"10.1088/1361-6528/adc608","url":null,"abstract":"Graphene Oxide (GO) is a two-dimensional (2D) nanomaterial largely exploited in many fields. Its preparation, usually performed from graphite in an oxidant environment, generally affords 2D layers with a broad size distribution, with overoxidation easily occurring. Here, we investigate the formation, along the Hummers synthesis of GO, of carbon nanoparticles (CNPs) isolated from GO and characterized through morphological and spectroscopic techniques. The purification methodology here applied is based on dialysis and results highly advantageous, since it does not involve chemical processes, which may lead to modifications in the composition of GO layers. Using a cross-matched characterization approach among different techniques, such as x-ray photoelectron spectroscopy, cyclic voltammetry and fluorescence spectroscopy, we demonstrate that the isolated CNP are constituted by layers that are highly oxidized at the edges and are stacked due toπ-πinteraction among their aromatic basal planes and H-bonded via their oxidized groups. These results, while representing a step forward in the comprehension of the structure of long-debated carbon debris in GO, strongly point to the introduction of dialysis as an indispensable step toward the preparation of more controlled and homogeneous GO layers and to its use for the valorization of low molecular weight GO species as luminescent CNPs.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143730995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Significantly boosted photocatalytic hydrogen evolution by Pd-TiO₂/ZnIn₂S₄nanowires heterojunction under simulated sunlight. Pd-TiO2/ZnIn2S4纳米线异质结在模拟阳光下显著促进光催化析氢。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-04 DOI: 10.1088/1361-6528/adc554

Mingming Du, Zheng Fang, Hongyue Liu, Qiyun Li, Anxian Peng, Huimei Chen, Yitong Liu, Jinwen Zhan, Rongjun Yan

{"title":"Significantly boosted photocatalytic hydrogen evolution by Pd-TiO2/ZnIn2S4nanowires heterojunction under simulated sunlight.","authors":"Mingming Du, Zheng Fang, Hongyue Liu, Qiyun Li, Anxian Peng, Huimei Chen, Yitong Liu, Jinwen Zhan, Rongjun Yan","doi":"10.1088/1361-6528/adc554","DOIUrl":"10.1088/1361-6528/adc554","url":null,"abstract":"In this work, Pd-TiO2/ZnIn2S4nanowires (Pd-Ti-Nws/ZIS) heterostructures catalysts were prepared and applied to photocatalytic hydrogen evolution under simulated sunlight. The results revealed that the hydrogen production rate of Pd-Ti-Nws-40/ZIS was as high as 66.7 mmol·g-1·h-1, which was 20.5 and 418 times as much as that of pure ZIS and Pd-Ti-Nws, respectively. After 5 cycles, the hydrogen production of the photocatalyst can still reach about 60 mmol within 120 min. According to the results of photochemistry and x-ray photoelectron spectroscopy, Pd-Ti-Nws/ZIS meets the S-scheme heterojunction system, which is beneficial to inhibit the recombination of photogenerated holes and electrons and increase carrier transport rate through the S-scheme heterojunction. Under light radiation, Pd-Ti-Nws is positively charged due to the accumulation of holes, and ZIS is negatively charged due to the accumulation of electrons with higher reducing power. Moreover, Pd nanoparticles obviously improve the response range and intensity of the catalyst to sunlight. Therefore, the photocatalytic hydrogen production rate obviously increased. This work provides a reasonable method for designing efficient catalysts for photocatalytic hydrogen production.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fluorescence dynamics of color centers in diamond needles. 金刚石针颜色中心的荧光动力学。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc4f1

Elena Filonenko, Polina Kuzhir, Sergei Malykhin

引用次数: 0

Electrostatic control of transconductance oscillations in MoS₂/WSe₂heterostructure. MoS2/ wse2异质结构中跨导振荡的静电控制。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc4ed

Nhat Anh Nguyen Phan, Inayat Uddin, Hai Yen Le Thi, Nobuyuki Aoki, Hye Jung Kim, Kenji Watanabe, Takashi Taniguchi, Muhammad Atif Khan, Gil-Ho Kim

{"title":"Electrostatic control of transconductance oscillations in MoS2/WSe2heterostructure.","authors":"Nhat Anh Nguyen Phan, Inayat Uddin, Hai Yen Le Thi, Nobuyuki Aoki, Hye Jung Kim, Kenji Watanabe, Takashi Taniguchi, Muhammad Atif Khan, Gil-Ho Kim","doi":"10.1088/1361-6528/adc4ed","DOIUrl":"10.1088/1361-6528/adc4ed","url":null,"abstract":"The progression of quantum phenomena aligns closely with the miniaturization of nano-semiconductor transistors. This necessitates innovative quantum structures beyond traditional transistor types. Investigating electrostatically defined nanoscale devices within two-dimensional (2D) semiconductor heterostructures, particularly van der Waals heterostructures offers advantages like large-scale uniformity and flexibility. Here, we focus on the charge transport of a MoS2/WSe2encapsulated heterostructure controlled by a split-gate configuration, revealing a distinctive step-like current profile at a low temperature of 77 K. The observed distinguishable regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the device is also investigated to understand the role of thermal effects on the observed electrostatic-controlled transconductance oscillations phenomenon. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures in narrow regimes. It holds promise for developing future integrated electronic devices based on 2D semiconducting nanomaterials with tailored confinement and enhanced functionalities.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Direct device integration of single 1D nanoparticle assemblies; a magnetization reversal and magnetotransport study. 一维纳米粒子组件的直接器件集成磁化反转和磁输运研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc1d0

Mehran Sedrpooshan, Claudiu Bulbucan, Damon J Carrad, Thomas S Jespersen, Adam M Burke, Maria E Messing, Rasmus Westerström

{"title":"Direct device integration of single 1D nanoparticle assemblies; a magnetization reversal and magnetotransport study.","authors":"Mehran Sedrpooshan, Claudiu Bulbucan, Damon J Carrad, Thomas S Jespersen, Adam M Burke, Maria E Messing, Rasmus Westerström","doi":"10.1088/1361-6528/adc1d0","DOIUrl":"10.1088/1361-6528/adc1d0","url":null,"abstract":"Nanochains (NCs) made up of a one-dimensional arrangement of magnetic nanoparticles (NPs) exhibit anisotropic properties with potential for various applications. Herein, using a novel self-assembly method we directly integrate single NCs onto desired substrates including devices. We present a nanoscopic analysis of magnetization reversal in 1D linear NP arrays by combining x-ray microscopy, magnetoresistance (MR), and micromagnetic simulations. Imaging the local magnetization along individual NCs by scanning transmission x-ray microscopy and x-ray magnetic circular dichroism under varyingin situmagnetic fields shows that each structure undergoes distinct non-homogeneous magnetization reversal processes. The experimental observations are complemented by micromagnetic simulations, revealing that morphological inhomogeneities critically influence the reversal process where regions with parallel chains or larger multi-domain particles act as nucleation centers for the magnetization switching and smaller particles provide pinning sites for the domain propagation. Magnetotransport through single NCs reveals distinct MR behavior that is correlated with the unique magnetization reversal processes dictated by the morphology of the structures. This study provides new insights into the complex magnetization reversal mechanism inherent to one-dimensional particle assemblies and the effective parameters that govern the process.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143657044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A first-principles study of Hoffmann-type ultra-wide bandgap semiconductor material. 霍夫曼型超宽带隙半导体材料的第一性原理研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc4f0

Jie Liu, Qiangqiang Qiao, Jinsen Zhang, Ziang Ren, Shihui Zou, Yujing Liu, Jianmin Luo, Huadong Yuan, Jianwei Nai, Yao Wang, Xinyong Tao

{"title":"A first-principles study of Hoffmann-type ultra-wide bandgap semiconductor material.","authors":"Jie Liu, Qiangqiang Qiao, Jinsen Zhang, Ziang Ren, Shihui Zou, Yujing Liu, Jianmin Luo, Huadong Yuan, Jianwei Nai, Yao Wang, Xinyong Tao","doi":"10.1088/1361-6528/adc4f0","DOIUrl":"10.1088/1361-6528/adc4f0","url":null,"abstract":"A novel Hoffmann-type metal-organic framework ultra-wide bandgap semiconductor material, {Ni(DMA)2[Ni(CN)4]}(DMA denotes dimethylamine), has been predicted. The material has been named Ni-DMA-Ni, and its structure, stability, electronic, mechanical, optical, and transport properties have been investigated by first-principles simulations. The calculation results demonstrate that Ni-DMA-Ni exhibits excellent thermal and dynamics stability at room temperature, with a bandgap value as high as 4.89 eV and the light absorption capacity reaches 105cm-1level in the deep ultraviolet region. The Young's modulus is 27.94 GPa, and the shear modulus is 10.82 GPa, indicating mechanical anisotropy. In addition, the construction of a two-probe device utilizing Ni-DMA-Ni to evaluate its transport properties revealed a negative differential resistance effect in itsI-Vcharacteristic curve. These unique properties highlight the potential application of the Ni-DMA-Ni material in the deep ultraviolet optoelectronic field. This study provides novel concepts and contributes significant insights to the research of Hoffmann-type semiconductor materials in the field of optoelectronic devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of calcined nanomagnesia on the structure and dielectric properties of polypropylene/ethylene-octene copolymer blend. 煅烧纳米镁对聚丙烯/乙烯-辛烯共聚物共混物结构和介电性能的影响。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc582

Siti Noorhazirah Kamarudin, Kwan Yiew Lau, Noor Azlinda Ahmad, Nur Azalia Azrin, Chee Wei Tan, Nor Hidayah Rahim, Kuan Yong Ching, Ahmad Basri Abdul Ghani, Nur Amira Nor Arifin

{"title":"Influence of calcined nanomagnesia on the structure and dielectric properties of polypropylene/ethylene-octene copolymer blend.","authors":"Siti Noorhazirah Kamarudin, Kwan Yiew Lau, Noor Azlinda Ahmad, Nur Azalia Azrin, Chee Wei Tan, Nor Hidayah Rahim, Kuan Yong Ching, Ahmad Basri Abdul Ghani, Nur Amira Nor Arifin","doi":"10.1088/1361-6528/adc582","DOIUrl":"10.1088/1361-6528/adc582","url":null,"abstract":"Polymer blends have attracted significant research interest due to their potential use as power cable insulating materials. Specifically, polypropylene (PP) blends offer improved dielectric properties over conventional crosslinked polyethylene insulating materials attributable to PP's high melting temperatures, hence high rated voltages. Despite numerous promising findings have been reported regarding the potential application of PP blends as power cable insulating materials, there have been relatively less investigations into the dielectric effects of incorporating nanofillers into PP blends. The current work therefore explores the influence of calcined magnesia (MgO) nanofiller on the structure and dielectric properties of PP blended with ethylene-octene copolymer (EOC). Nanofiller-wise, calcination of MgO does not significantly affect the structure of MgO, albeit that water-related molecules are removed from MgO. Upon adding the calcined MgO to the PP/EOC blend, the breakdown performance of the PP/EOC/MgO blend nanocomposites becomes jeopardized, especially under the direct current field. This is primarily attributed to the presence of residue water molecules within the PP/EOC/MgO blend nanocomposites, even after MgO calcination. Although the addition of the calcined MgO to the PP blend does not result in favorable dielectric properties, the findings suggest that nanostructuration of PP blends could be further explored to pave the way for the development of nanostructured PP blends for use in advanced power cable insulation applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143730990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of shallow EUV gratings on silicon by irradiation with helium ions. 用氦离子辐照在硅上制备浅极紫外光栅。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-03 DOI: 10.1088/1361-6528/adc4ec

J Kaufmann, R Ciesielski, K Freiberg, M Walther, A Fernández Herrero, S Lippmann, V Soltwisch, T Siefke, U Zeitner

{"title":"Fabrication of shallow EUV gratings on silicon by irradiation with helium ions.","authors":"J Kaufmann, R Ciesielski, K Freiberg, M Walther, A Fernández Herrero, S Lippmann, V Soltwisch, T Siefke, U Zeitner","doi":"10.1088/1361-6528/adc4ec","DOIUrl":"10.1088/1361-6528/adc4ec","url":null,"abstract":"To accurately achieve structure height differences in the range of single digit nanometres is of great importance for the fabrication of diffraction gratings for the extreme ultraviolet range (EUV). Here, structuring of silicon irradiated through a mask by a broad beam of helium ions with an energy of 30 keV was investigated as an alternative to conventional etching, which offers only limited controllability for shallow structures due to the higher rate of material removal. Utilising a broad ion beam allows for quick and cost effective fabrication. Ion fluence of the irradiations was varied in the range of 1016 ... 1017 ions · cm-2. This enabled a fine tuning of structure height in the range of 1.00 ± 0.05 to 20 ± 1 nm, which is suitable for shallow gratings used in EUV applications. According to transmission electron microscopy investigations the observed structure shape is attributed to the formation of point defects and bubbles/cavities within the silicon. Diffraction capabilities of fabricated elements are experimentally shown at the SX700 beamline of BESSY II. Rigorous Maxwell solver simulation based on the finite-element method and rigorous coupled wave analysis are utilised to describe the experimental obtained diffraction pattern.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristics of aluminum-doped SnO₂in various positions using super-cycle ALD. 利用超循环ALD研究不同位置掺铝sno2的特性。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-02 DOI: 10.1088/1361-6528/adc4ef

Jangho Bae, Hyeongtag Jeon

{"title":"Characteristics of aluminum-doped SnO2in various positions using super-cycle ALD.","authors":"Jangho Bae, Hyeongtag Jeon","doi":"10.1088/1361-6528/adc4ef","DOIUrl":"10.1088/1361-6528/adc4ef","url":null,"abstract":"Metal oxide has attracted increasing interest because of its low resistivity, high transmittance, and flexibility. Among many metal oxide materials, tin dioxide (SnO2), which has a low melting point and wide bandgap (3.6-4.0 eV), has properties suitable for applications such as transparent conductive oxides and thin film transistors. However, SnO2has high oxygen vacancies (Ovac) and conductivity, reducing the on/off current ratio. To address this issue, we proposed an aluminum (Al) doping strategy using a super-cycle atomic layer deposition (ALD) process, which offers precise doping position control and uniform thickness. The effect of Al dopants used as the carrier suppressor in SnO2was studied with different doping positions to investigate their impact on reducing Ovacand improving the off-current characteristics. The film properties were analyzed by AES, XRD, transmission electron microscopy, x-ray photoelectron spectroscopy, and Hall measurement, and the device property was analyzed byI-Vmeasurements. The results revealed that Al doping in the middle region of the SnO2thin film led to the most significant reduction in carrier concentration (1.31 × 1020cm-3) and Ovac(17.2%), thereby enhancing the SnO2film properties and off-current characteristics. These findings demonstrate that precise doping control via super-cycle ALD can effectively modulate the electrical properties of SnO2-based devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance self-powered broadband photodetector based on Ag_xO_y@n-Si heterojunction. 基于AgxOy@n-Si异质结的高性能自供电宽带光电探测器。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-01 DOI: 10.1088/1361-6528/adc460

Betül Ceviz Şakar, Fatma Yıldırım, Şakir Aydoğan

{"title":"High-performance self-powered broadband photodetector based on AgxOy@n-Si heterojunction.","authors":"Betül Ceviz Şakar, Fatma Yıldırım, Şakir Aydoğan","doi":"10.1088/1361-6528/adc460","DOIUrl":"10.1088/1361-6528/adc460","url":null,"abstract":"Thin silver oxide AgxOyfilm (p-type) was deposited via DC magnetron sputtering onto n-type silicon substrate and integrated into a pn heterojunction architecture. Structural (XRD, XPS and EDX), optical ultraviolet-visible-near infrared and morphological analysis (SEM) of the AgxOyfilm were investigated in detail. Electrical measurements revealed that the AgxOy/n-Si pn heterojunction as a self-driven photodetector device exhibits a high photoresponse both in visible light and in UV, IR and yellow lights. It was also observed that under visible light the photocurrent increased with increasing light intensity, higher at higher intensities. Furthermore, the photodetector exhibits high sensitivity to the incident light of 365 nm with responsivity as 1061 mA W-1for -1.5 V. The highest specific detectivity value for the conditions illuminated by LED with wavelength of 590 nm is 9.77 × 1012cm·Hz1/2·W-1(Jones) for zero bias. Experimental results show that the AgxOy/n-Si heterojunction has great potential for practical applications as self-driven and high-performance photodetectors.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143701119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0