Nanotechnology最新文献_第10页

Electron microscopy study of the shell geometry in bent and twisted GaAs-InP core-shell nanowires. 弯曲和扭曲GaAs-InP核壳纳米线壳几何结构的电镜研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-12 DOI: 10.1088/1361-6528/add26e

Spencer McDermott, Trevor R Smith, Ryan B Lewis

引用次数: 0

Improved energy storage performance of BOPP sandwich structured films by modulating the topological structure. 通过调制拓扑结构，提高了BOPP夹层结构薄膜的储能性能。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-12 DOI: 10.1088/1361-6528/add01d

Yi Gong, Xin Wei, Liangbao Liu, Haozhe Jia, Ruijiao Liu

引用次数: 0

Bright quantum dot light sources using monolithic microlenses on gold back-reflectors. 明亮的量子点光源使用单片微透镜在黄金背反射器上。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-12 DOI: 10.1088/1361-6528/add350

Moritz Langer, Sai A Dhurjati, Yared G Zena, Ahmad Rahimi, Mandira Pal, Liesa Raith, Sandra Nestler, Riccardo Bassoli, Frank H P Fitzek, Oliver G Schmidt, Caspar Hopfmann

{"title":"Bright quantum dot light sources using monolithic microlenses on gold back-reflectors.","authors":"Moritz Langer, Sai A Dhurjati, Yared G Zena, Ahmad Rahimi, Mandira Pal, Liesa Raith, Sandra Nestler, Riccardo Bassoli, Frank H P Fitzek, Oliver G Schmidt, Caspar Hopfmann","doi":"10.1088/1361-6528/add350","DOIUrl":"https://doi.org/10.1088/1361-6528/add350","url":null,"abstract":"We demonstrate a scalable method for fabricating bright GaAs quantum dot (QD) photon sources by embedding them into broadband monolithic AlGaAs microlens arrays on gold-coated GaAs substrates. Cylindrical photoresist templates (2-5 µm diameter) are thermally reflowed and transferred into AlGaAs thin films using an optimized 3D reactive ion etching process. This yields large-area (2 mm × 4 mm), high-density (∼40×103 mm-2) microlens arrays of uniform shape. The brightest QD emissions are found in lenses with 2.7 µm diameter and 1.35 µm height. Finite-difference time-domain simulations of lens geometries reveal optimization potentials, including anti-reflection coatings. It is found that free-space and fiber-coupled extraction efficiencies can reach up to 62% and 37%, respectively. A statistical fabrication model, validated through photoluminescence spectroscopy, shows intensity enhancements up to × 200 in ca. 1 out of 200 lenses, aligning well with theoretical predictions. This approach highlights the promise of compact, efficient photon sources for future large-scale quantum network applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 22","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144029712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The convergence of nanomanufacturing and artificial intelligence: trends and future directions. 纳米制造与人工智能的融合：趋势与未来方向。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-12 DOI: 10.1088/1361-6528/add304

Vamsi K Yadavalli

{"title":"The convergence of nanomanufacturing and artificial intelligence: trends and future directions.","authors":"Vamsi K Yadavalli","doi":"10.1088/1361-6528/add304","DOIUrl":"https://doi.org/10.1088/1361-6528/add304","url":null,"abstract":"The integration of nanoscale production processes with Artificial intelligence (AI) algorithms has the potential to open new frontiers in nanomanufacturing by accelerating development timelines, optimizing production, reducing costs, enhancing quality control, and improving sustainability. Such changes are already underway with digital and cyber-physical technologies becoming increasingly intertwined with 'smart' manufacturing and industrial processes today. With the nanomanufacturing sector focused on the scalable production of complex (nano)materials, (nano)devices, and biologics, AI and its sub-fields, including machine learning (ML), are positioned to be key enablers of efficiency and innovation. In this topical review, we briefly explore the current state-of-the-art of how AI and ML techniques can be employed within nanomanufacturing. We discuss from a birds-eye perspective, the impact of AI/ML on various stages of the production lifecycle, and examine future opportunities and challenges. Key areas include computational design and discovery, process optimization, predictive maintenance, and quality assurance/defect detection. Further, challenges in implementation, process complexity, and ethical and regulatory considerations are explored in light of the increasing reliance on data-driven approaches for manufacturing.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 22","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144004682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation study of biosensor based on germanium-based dual-source dopingless line-tunneling FET. 基于锗基双源无掺杂线隧穿场效应晶体管的生物传感器仿真研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-12 DOI: 10.1088/1361-6528/add303

Junjie Huang, Hongxia Liu, Shupeng Chen, Shulong Wang, Chen Chong, Zhanpeng Yan, Xilong Zhou, Chang Liu

引用次数: 0

Composition-dependent properties of ultra-thin MoSi_xbased extreme ultraviolet pellicle. 超薄钼基极紫外光膜的成分依赖性质。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-09 DOI: 10.1088/1361-6528/add305

Munsu Choi, Juhee Hong

{"title":"Composition-dependent properties of ultra-thin MoSixbased extreme ultraviolet pellicle.","authors":"Munsu Choi, Juhee Hong","doi":"10.1088/1361-6528/add305","DOIUrl":"https://doi.org/10.1088/1361-6528/add305","url":null,"abstract":"Extreme ultraviolet (EUV) pellicle is essential for protecting photomask from external contamination in EUV lithography (EUVL), a critical technology for nanometer-scale photolithography. However, achieving high optical transmittance, thermal stability, and mechanical robustness in pellicle for high-power EUVL processes remains challenging. This study fabricated EUV pellicles using multilayer MoSixthin films with varying Mo-to-Si ratios and protective capping layers. As Mo content increased, mechanical and thermal properties improved, while optical transmittance decreased. MoSi2(x= 2) exhibited the highest tensile strength and >90% fabrication yield. In contrast, MoSi3.4(x= 3.4) showed enhanced optical properties, and MoSi2.3(x= 2.3) offered superior thermal performance. These results highlight the composition-dependent trade-offs in optimizing pellicle performance for EUVL applications. In contrast to previous studies, which investigated a single MoSi2composition, this study systematically explores a broad compositional range of MoSix(x= 1.6-3.4). A distinct contribution of this work is the quantitative linkage established between mechanical performance, particularly ultimate tensile strength, and fabrication yield. The results reveal that no single composition optimizes all critical properties simultaneously, highlighting the necessity of trade-off-based material selection for application-specific requirements in EUVL. This study offers a guideline for optimizing EUV pellicle design, contributing to higher wafer throughput, improved equipment utilization, and reduced operational costs in high-volume lithography.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 22","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143972683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic mechanism behind the influence of intercalated heteroatom Sn on the slip energy barrier in layered WS₂. 杂原子Sn对层状WS2中滑移能垒影响的电子机制。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-08 DOI: 10.1088/1361-6528/add166

Dulin Huang, Gonglei Shao, Xu Zhang, Zhen Zhou

{"title":"Electronic mechanism behind the influence of intercalated heteroatom Sn on the slip energy barrier in layered WS2.","authors":"Dulin Huang, Gonglei Shao, Xu Zhang, Zhen Zhou","doi":"10.1088/1361-6528/add166","DOIUrl":"https://doi.org/10.1088/1361-6528/add166","url":null,"abstract":"Frictional losses often result in substantial economic costs, and the application of lubricants can markedly mitigate these losses. Recently, layered materials have garnered extensive research interest due to their exceptional lubricating properties. However, the exploration of sliding mechanisms associated with intercalated heteroatoms in layered materials remains a subject of considerable uncertainty. In this work, we employ density functional theory to unravel the friction modulation mechanism of Sn atoms intercalated in layered WS2. Our findings demonstrate that Sn intercalation significantly reduces the sliding energy barrier (down to 0.96 meV atom-1), while the friction force and shear strength are minimized to 0.0011 nN atom-1and 0.0008 GPa, respectively, outperforming conventional two-dimensional materials such as MoS2and graphene. Furthermore, Sn intercalation enhances interlayer electrostatic repulsion and suppresses dynamic charge density fluctuations. To quantitatively elucidate the energy barrier variation, we propose a novel metric-total charge density difference evolution (Δρ2). This discovery provides theoretical guidance for designing ultra-low-friction lubricants and is expected to advance energy efficiency in industrial machinery.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 22","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144037199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CVD-grown SnS₂active layers on AlGaN/GaN HEMT for arsenic (III) ions detection. cvd生长的sns2活性层在AlGaN/GaN HEMT上检测砷（III）离子。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-06 DOI: 10.1088/1361-6528/adcc37

Nipun Sharma, Adarsh Nigam, Jai Mishra, Ashok Kumar, Srinjoy Mitra, Ankur Gupta, Sudhiranjan Tripathy, Mahesh Kumar

{"title":"CVD-grown SnS2active layers on AlGaN/GaN HEMT for arsenic (III) ions detection.","authors":"Nipun Sharma, Adarsh Nigam, Jai Mishra, Ashok Kumar, Srinjoy Mitra, Ankur Gupta, Sudhiranjan Tripathy, Mahesh Kumar","doi":"10.1088/1361-6528/adcc37","DOIUrl":"https://doi.org/10.1088/1361-6528/adcc37","url":null,"abstract":"The pervasive contamination of water sources by the toxic heavy metal arsenic presents a serious threat to human health and ecological systems. This raises the critical need for innovative detection platforms that can detect such contamination at low cost and as part of an onsite, distributed sensor network. In this context, we report an Arsenic (As3+) ion detection system that was fabricated using 2D SnS2functionalized AlGaN/GaN high electron mobility transistor (HEMT). SnS2layers were grown on the HEMT surface by chemical vapor deposition (CVD) which depicts hexagonal oriented nanosheets with crystal edges. The source and drain tri-metal contacts of Au/Cr/Al were fabricated by thermal evaporation using shadow mask. The sensor response was analyzed by measuring the variation in drain to source current of the device after introducing varied concentrations of As3+ions, ranging from 1 ppb to 10 ppm. The observed sensitivity of the device is 0.42μA ppb-1, with a detection limit of 0.90 ppb, and a response time of 3.2 s. Further, real-time data analysis was performed by the integration of the developed sensor with a customized printed circuit board connected with an Arduino Nano 33 Bluetooth Low Energy (BLE) module for data transmission. The concept of growing the SnS2layer as a functionalizing layer by CVD results in quick response, good repeatability, and selectivity thereby eliminating the need for any additional reference electrode. Integration of the developed AlGaN/GaN HEMT sensor with Arduino Nano 33 BLE makes it an ideal candidate for portable heavy metal ion sensing device for onsite detection.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 20","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144019343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical synthesis and supercapacitor performance of manganese and cerium oxide-doped polyaniline composites. 锰铈掺杂聚苯胺复合材料的电化学合成及其超级电容器性能。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-06 DOI: 10.1088/1361-6528/add01e

Hilal Yildirim Kalyon, Yakup Fatih Karasan, Metin Gencten

引用次数: 0

Bulk synthesis of mixed transition metal dichalcogenide and performance as working electrode in Li, Na, and K-ion half cells. 混合过渡金属二硫化物的体合成及其在Li， Na和k离子半电池中作为工作电极的性能。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-30 DOI: 10.1088/1361-6528/adcf30

Arijit Roy, Gurpreet Singh

{"title":"Bulk synthesis of mixed transition metal dichalcogenide and performance as working electrode in Li, Na, and K-ion half cells.","authors":"Arijit Roy, Gurpreet Singh","doi":"10.1088/1361-6528/adcf30","DOIUrl":"https://doi.org/10.1088/1361-6528/adcf30","url":null,"abstract":"Nanosheets of mixed or cation-substituted Transition metal dichalcogenide (TMD) are promising materials for a range of applications, including electrodes for electrochemical energy storage devices. Yet such materials are expensive to produce in large quantities (gram levels or higher). Here, we report on a two-step process, which involves precursor pyrolysis and sulfur annealing for the preparation of bulk powders of MoxW1-xS2. The structural and morphological properties of the synthesized cation-substituted TMD alloy are compared with high-purity commercially sourced MoWS2and MoS2/WS2hybrid specimens. Notably, the electrochemical characteristics of synthesized MoxW1-xS2exhibit exceptional first-cycle specific charge capacities for lithium-ion (638 mAh g-1), sodium-ion (423 mAh g-1), and potassium-ion (328 mAh g-1) half-cells. All the cells showed capacity decay in longer-term cycling tests, arising from volume changes in TMD conversion-type electrodes. To mitigate the capacity decay, a voltage cut-off method is implemented, which minimizes irreversibility and structural distortion of TMD during cycling, even at higher cycling currents with nearly 100% average cycling efficiency. The findings of this study demonstrate a proficient and scalable synthesis methodology poised to be utilized across an array of layered TMD materials, with benefits to both industry and fundamental research into alkali-metal-ion energy storage.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 21","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144003343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0