Nanotechnology最新文献

Characteristics of aluminum-doped SnO₂in various positions using super-cycle ALD.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-02 DOI: 10.1088/1361-6528/adc4ef

Jangho Bae, Hyeongtag Jeon

{"title":"Characteristics of aluminum-doped SnO2in various positions using super-cycle ALD.","authors":"Jangho Bae, Hyeongtag Jeon","doi":"10.1088/1361-6528/adc4ef","DOIUrl":"10.1088/1361-6528/adc4ef","url":null,"abstract":"Metal oxide has attracted increasing interest because of its low resistivity, high transmittance, and flexibility. Among many metal oxide materials, tin dioxide (SnO2), which has a low melting point and wide bandgap (3.6-4.0 eV), has properties suitable for applications such as transparent conductive oxides and thin film transistors. However, SnO2has high oxygen vacancies (Ovac) and conductivity, reducing the on/off current ratio. To address this issue, we proposed an aluminum (Al) doping strategy using a super-cycle atomic layer deposition (ALD) process, which offers precise doping position control and uniform thickness. The effect of Al dopants used as the carrier suppressor in SnO2was studied with different doping positions to investigate their impact on reducing Ovacand improving the off-current characteristics. The film properties were analyzed by AES, XRD, transmission electron microscopy, x-ray photoelectron spectroscopy, and Hall measurement, and the device property was analyzed byI-Vmeasurements. The results revealed that Al doping in the middle region of the SnO2thin film led to the most significant reduction in carrier concentration (1.31 × 1020cm-3) and Ovac(17.2%), thereby enhancing the SnO2film properties and off-current characteristics. These findings demonstrate that precise doping control via super-cycle ALD can effectively modulate the electrical properties of SnO2-based devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143710420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance self-powered broadband photodetector based on Ag_xO_y@n-Si heterojunction.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-01 DOI: 10.1088/1361-6528/adc460

Betül Ceviz Şakar, Fatma Yıldırım, Şakir Aydoğan

{"title":"High-performance self-powered broadband photodetector based on AgxOy@n-Si heterojunction.","authors":"Betül Ceviz Şakar, Fatma Yıldırım, Şakir Aydoğan","doi":"10.1088/1361-6528/adc460","DOIUrl":"10.1088/1361-6528/adc460","url":null,"abstract":"Thin silver oxide AgxOyfilm (p-type) was deposited via DC magnetron sputtering onto n-type silicon substrate and integrated into a pn heterojunction architecture. Structural (XRD, XPS and EDX), optical ultraviolet-visible-near infrared and morphological analysis (SEM) of the AgxOyfilm were investigated in detail. Electrical measurements revealed that the AgxOy/n-Si pn heterojunction as a self-driven photodetector device exhibits a high photoresponse both in visible light and in UV, IR and yellow lights. It was also observed that under visible light the photocurrent increased with increasing light intensity, higher at higher intensities. Furthermore, the photodetector exhibits high sensitivity to the incident light of 365 nm with responsivity as 1061 mA W-1for -1.5 V. The highest specific detectivity value for the conditions illuminated by LED with wavelength of 590 nm is 9.77 × 1012cm·Hz1/2·W-1(Jones) for zero bias. Experimental results show that the AgxOy/n-Si heterojunction has great potential for practical applications as self-driven and high-performance photodetectors.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143701119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic and molecular layer deposition on unconventional substrates: challenges and perspectives from energy applications.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-04-01 DOI: 10.1088/1361-6528/adbd49

Yukio Cho, Giulio D'Acunto, Jagjit Nanda, Stacey F Bent

{"title":"Atomic and molecular layer deposition on unconventional substrates: challenges and perspectives from energy applications.","authors":"Yukio Cho, Giulio D'Acunto, Jagjit Nanda, Stacey F Bent","doi":"10.1088/1361-6528/adbd49","DOIUrl":"10.1088/1361-6528/adbd49","url":null,"abstract":"The use of atomic layer deposition (ALD) and molecular layer deposition (MLD) in energy sectors such as catalysis, batteries, and membranes has emerged as a growing approach to fine-tune surface and interfacial properties at the nanoscale, thereby enhancing performance. However, compared to the microelectronics field where ALD is well established on conventional substrates such as silicon wafers, employing ALD and MLD in energy applications often requires depositing films on unconventional substrates such as nanoparticles, secondary particles, composite electrodes, membranes with a wide pore size distribution, and two-dimensional materials. This review examines the challenges and perspectives associated with implementing ALD and MLD on these unconventional substrates. We discuss how the complex surface chemistries and intricate morphologies of these substrates can lead to non-ideal growth behaviors, resulting in inconsistent film properties compared to those grown on standard wafers, even within the same deposition process. Additionally, the review outlines the strengths and limitations of several characterization techniques when employed for ALD or MLD films grown on unconventional substrates, and it highlights a few example studies in which these growth methods have been applied for energy applications with a focus on energy storage. With ALD and MLD continuing to gain attention, this review aims to deepen the understanding of how to achieve controllable, predictable, and scalable deposition with atomic-scale precision, ultimately advancing the development of more efficient and durable energy devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143573443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Designing Mg-enhanced cobalt silicate @13X core-shell nanostructures via in-situ growth: synergistic PMS activation and anti-leaching for efficient metronidazole mineralization.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-31 DOI: 10.1088/1361-6528/adc741

Qing Sun, Jiao Yan, Jiale Yu, Xiaofang Hu, Jian Zhang, Jiawei Sheng

{"title":"Designing Mg-enhanced cobalt silicate @13X core-shell nanostructures via in-situ growth: synergistic PMS activation and anti-leaching for efficient metronidazole mineralization.","authors":"Qing Sun, Jiao Yan, Jiale Yu, Xiaofang Hu, Jian Zhang, Jiawei Sheng","doi":"10.1088/1361-6528/adc741","DOIUrl":"https://doi.org/10.1088/1361-6528/adc741","url":null,"abstract":"In this study, the core-shell nanostructure of magnesium reinforced cobalt silicate@13X was synthesized by a two-step reaction using zeolite 13X as the initial silicate material and carrier, and the organic pollutant metronidazole was degraded by activating PMS. It was found that 6CoMg-13X had excellent and stable catalytic performance on PMS activation, with a degradation rate of 99.7% in 5 min and a removal rate of more than 99.4% after 5 cycles. Under hydrothermal conditions, 13X gradually dissolved into silicate anion under the action of urea, while Co2+ and Mg2+ reacted on 13X surface to form ultra-thin core-shell nanostructures, the calcination process further improves the stability of the catalyst while reducing cobalt leaching, after calcination, cobalt leaching is only 0.16 mg/L. In addition, the catalyst had high degradation rates for norfloxacin (NFA), 5-fluorouracil (FLU), tetracycline (TC) and Rhodamine B (RhB), which were 90.29%, 97.36%, 96.24% and 99.69%, respectively. EPR and quenching experiments indicated that SO4•- and 1O2 are the main active substances in the 6CoMg-13X-PMS system, and •OH and •O2- also play a certain role in the degradation system. This research provides a feasible solution for developing high performance cobalt-based environmental purification catalysts.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143753686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient hot carrier injection in plasmonic semiconductor heterojunction for artificial photosynthesis of ammonia.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-31 DOI: 10.1088/1361-6528/adc740

Keming Wu, Qiang Li, Shuai Yue, Xiaoxia Bai, Xinfeng Liu, Zhenhuan Zhao

{"title":"Efficient hot carrier injection in plasmonic semiconductor heterojunction for artificial photosynthesis of ammonia.","authors":"Keming Wu, Qiang Li, Shuai Yue, Xiaoxia Bai, Xinfeng Liu, Zhenhuan Zhao","doi":"10.1088/1361-6528/adc740","DOIUrl":"https://doi.org/10.1088/1361-6528/adc740","url":null,"abstract":"Plasmonic semiconductors are arising as potential photocatalysts for the artificial synthesis of green ammonia. However, plasmon excitation-generated hot carriers on a single nanoparticle are easily recombined, leading to low photoconversion efficiency, and energetic defects make plasmonic semiconductors subject to unexpected changes, limiting post-engineering. Here, we developed a plasmonic semiconductor p-n junction by in situ growing p-type Cu3BiS3 in n-type Bi2S3 nanorods by an ion exchange method. The formation of plasmonic semiconductor heterojunctions was verified through high-resolution transmission electron microscopy, Mott-Schottky tests, valence band spectroscopy, and X-ray diffraction (XRD). Additionally, the rapid transfer of hot carriers between the heterojunctions was investigated using transient absorption spectroscopy. The plasmonic p-n junction shows strong localized surface plasmon resonance absorption in the near-infrared range and delivers a 61 times enhancement of the ammonia production rate under full spectrum irradiation in pure water. It can achieve an apparent quantum efficiency of 0.45% at 400 nm and 0.16% at 1000 nm. In situ Fourier-transform infrared (FTIR) reveal that the plasmonic semiconductor heterojunction promotes the nitrogen chemisorption and activation. Using ultrafast transient absorption spectroscopy, we found that localized surface plasmon resonance (LSPR) induced hot carriers can be efficiently injected from plasmonic Cu3BiS3 to non-plasmonic Bi2S3, with sufficient energy to drive water oxidation. We further confirmed that photothermal effects have little contribution to the photocatalytic performance in the water-particle suspension system. The present study shows a potential strategy utilizing plasmonic semiconductors made of earth-abundant elements for green ammonia synthesis.&#xD.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143753688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advances in 0D quantum dots and hybrid nanoarchitectures for high-performance gas sensing devices. 用于高性能气体传感设备的 0D 量子点和混合纳米架构的进展。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-31 DOI: 10.1088/1361-6528/adc310

Utkarsh Kumar, Zu-Yin Deng, Bal Chandra Yadav, M W Lee, Chiu-Hsien Wu

{"title":"Advances in 0D quantum dots and hybrid nanoarchitectures for high-performance gas sensing devices.","authors":"Utkarsh Kumar, Zu-Yin Deng, Bal Chandra Yadav, M W Lee, Chiu-Hsien Wu","doi":"10.1088/1361-6528/adc310","DOIUrl":"10.1088/1361-6528/adc310","url":null,"abstract":"Zero-dimensional quantum dots (QDs) and their hybrid structures having been rapidly developed are reshaping the design and performance of next generation ultrafast electronic and optoelectronic devices. The high-performance metrics achievable in photodetectors, solar cells, transistors, and other application areas can be realized through the use of QDs with their tunable electronic and optical properties. Recent advances in the synthesis of QD hybrid structures, where QDs are incorporated within other nanostructure dimensions (1D nanowires, 2D materials), have dramatically increased charge carrier mobility, lowered recombination rates, and resulted in highly controlled interfacial properties. Synergistic effects between these hybrid configurations are exploited, including improved charge separation and enhanced exciton dissociation, which are very important for having ultrafast response times and greater sensitivity. Advanced fabrication techniques such as chemical vapor deposition and solution based self-assembly, QD hybrids can be fabricated with highly controlled interfaces and optimal energy band alignments. Further, computational simulations such as density functional theory (DFT) and time dependent DFT have provided further insights into the charge dynamics and electronic interactions in these hybrid systems for guidance on their design and application. The potential of QD-based hybrid architectures in addressing future information processing demands is demonstrated in this work, setting the stage for the development of high-speed, low-power devices in communications, sensing, and renewable energy technologies.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143669803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A perspective on plasmonic metasurfaces: unlocking new horizons for sensing applications.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-28 DOI: 10.1088/1361-6528/adc30f

Muhammad Ali Butt

{"title":"A perspective on plasmonic metasurfaces: unlocking new horizons for sensing applications.","authors":"Muhammad Ali Butt","doi":"10.1088/1361-6528/adc30f","DOIUrl":"10.1088/1361-6528/adc30f","url":null,"abstract":"Metasurfaces (MSs), two-dimensional arrays of engineered nanostructures, have revolutionized optics by enabling precise manipulation of electromagnetic waves at subwavelength scales. These platforms offer unparalleled control over amplitude, phase, and polarization, unlocking advanced applications in imaging, communication, and sensing. Among them, plasmonic MSs stand out for their ability to exploit surface plasmon resonances (SPRs)-collective electron oscillations at metal-dielectric interfaces. This phenomenon enables extreme light confinement and field enhancement, leading to highly efficient light-matter interactions. The remarkable sensitivity of SPR to refractive index variations makes plasmonic MSs ideal for detecting minute biochemical and environmental changes with exceptional precision. Additionally, their tunable SPR characteristics enhance multifunctionality, enabling adaptive and real-time sensing. By leveraging these advantages, plasmonic MSs address critical challenges in modern sensing, driving breakthroughs in biomedical diagnostics, environmental monitoring, and chemical detection. This perspective explores recent advancements in plasmonic MSs, emphasizing flexible, multifunctional designs and the transformative role of artificial intelligence in optimizing performance and enabling real-time data analysis.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143670542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Regulating transient optical responses in twisted bilayer WS₂.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-28 DOI: 10.1088/1361-6528/adc311

Zhiwen Tian, Dawei He, Mohan Huang, Wenwen Wu, Yinglin Zhang, Xiaojing Liu, Fangying Ren, Jiarong Wang, Guili Li, Kun Zhao, Yongsheng Wang, Xiaoxian Zhang

{"title":"Regulating transient optical responses in twisted bilayer WS2.","authors":"Zhiwen Tian, Dawei He, Mohan Huang, Wenwen Wu, Yinglin Zhang, Xiaojing Liu, Fangying Ren, Jiarong Wang, Guili Li, Kun Zhao, Yongsheng Wang, Xiaoxian Zhang","doi":"10.1088/1361-6528/adc311","DOIUrl":"https://doi.org/10.1088/1361-6528/adc311","url":null,"abstract":"The optical response manipulation of two-dimensional materials is crucial for designing and optimizing high-performance optoelectronic devices. Previously, optical modulation in two-dimensional semiconductors primarily relied on adjusting carrier density through optical excitation or charge injection using the energy band-filling effect. Recently, twist angle has been found to tune the optical and optoelectronic properties of van der Waals structure, but its impact on the transient optical response remains unexplored. Herein, we demonstrate that twist angle can effectively regulate carrier behaviors by tracing the evolution of optical responses in twisted bilayer WS2from 0° to 60°. Both Raman and PL spectra consistently show that the optical responses of WS2bilayers are highly dependent on the twist angle. Exciton behavior and phonon modes exhibit similarity at twist angles near 0° and 60°, but significantly change as the angle approaches 30°. Moreover, the impact of the twist angle on the transient optical responses was carefully investigated using a femtosecond pump-probe technique. The results reveal a significant decrease in carrier thermalization/relaxation time and exciton formation/recombination time at the WS2bilayers with twist angle of ∼31.0°, as compared to twist angles of ∼2.9° and ∼58.9°, which can be attributed to the accumulation of intralayer carriers due to weakened interlayer coupling. These results demonstrate that twist angle can effectively modulate the optical response of twisted 2D materials. Our study elucidates the dynamic carrier behavior in twisted bilayer WS2and provides new insights for designing future optoelectronic and photonic devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 18","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143731003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NW-based sample preparation for ultrahigh vacuum STM imaging.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-28 DOI: 10.1088/1361-6528/adc698

Nikita A Solomonov, Denis V Lebedev, Alexandr V Arkhipov, Vladimir V Fedorov, Alexander A Vorobyev, Vladislav A Sharov, Alexey M Mozharov, Sergey V Lebedev, Alexander O Golubok, Ivan S Mukhin

{"title":"NW-based sample preparation for ultrahigh vacuum STM imaging.","authors":"Nikita A Solomonov, Denis V Lebedev, Alexandr V Arkhipov, Vladimir V Fedorov, Alexander A Vorobyev, Vladislav A Sharov, Alexey M Mozharov, Sergey V Lebedev, Alexander O Golubok, Ivan S Mukhin","doi":"10.1088/1361-6528/adc698","DOIUrl":"https://doi.org/10.1088/1361-6528/adc698","url":null,"abstract":"Nanowires (NWs) of III-V semiconductors provide a promising platform for the development of electronic and photonic components of integrated circuits. For the development of complex NW-based devices, it is crucial to precisely study structural, electronic, and optical properties at the nanoscale. Scanning tunneling microscopy (STM) is commonly used to achieve such precision. In this work we optimize the tunneling contact parameters in an ultrahigh vacuum STM (at room temperature) for reproducible high-quality topographic imaging of conductive GaP NWs, especially promising for photonic integrated circuits. Two methods were employed for transferring NWs onto auxiliary conducting substrates: ultrasonication in liquid (deionized water or isopropyl alcohol) followed by drop casting and mechanical scratching. Five substrate materials were tested: highly oriented pyrolytic graphite, single crystal silicon wafers, thin films of nickel, indium tin oxide and gold. The experimental results showed that the tunneling contact parameters, substrate material, and transfer method significantly affect the quality of STM images. It was found that bias voltages of 7-10 V, tunneling current up to 400 pA, and image recording rates in the range of 500-1500 nm/s were optimal, with nickel-coated substrates providing the best stability and image quality. Potentially harmful procedures for NW and substrate surfaces, such as ion treatment and high-temperature annealing, were avoided during the sample preparation. The results expand the understanding of STM studies of NWs and their applications in electronic and photonic devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143743214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Variability Induced by Random Discrete Dopants in Source and Drain Extensions of Gate-all-around Nanosheet FETs: A Quantum Transport Simulation Study.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-03-27 DOI: 10.1088/1361-6528/adc606

Jaehyun Lee, Tapas Dutta, Vihar Georgiev, Asen Asenov

{"title":"Variability Induced by Random Discrete Dopants in Source and Drain Extensions of Gate-all-around Nanosheet FETs: A Quantum Transport Simulation Study.","authors":"Jaehyun Lee, Tapas Dutta, Vihar Georgiev, Asen Asenov","doi":"10.1088/1361-6528/adc606","DOIUrl":"https://doi.org/10.1088/1361-6528/adc606","url":null,"abstract":"Gate-all-around (GAA) nanosheet field-effect transistors (FETs) have significantly advanced nanoscale device technology by mitigating short-channel effects. These GAA structures are becoming essential in sub-3nm technology and are evolving into complementary FETs. Despite the reduction in variability achieved by multi-gate structures, random discrete dopants (RDDs) in source and drain regions continue to pose challenges. This study addresses the local variability induced by RDDs, particularly in the source and drain extensions in GAA nanosheet FETs. Through statistical quantum transport simulations under a ballistic approximation, we investigate parameters such as spacer length, channel width, and channel thickness. The results show that RDDs in the source and drain extensions cause not only threshold voltage variation but also increase resistance and reduce ON-state current. GAA nanosheet FETs with a 3 nm×10 nm cross-sectional channel and 5 nm spacer length exhibit 10% reduction in ON-state current compared to the ideal device, along with a standard deviation (variability) of 0.35 µA. Mitigation of these effects requires the use of thin, wide, and large cross-section nanosheets and short spacer lengths.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143730998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0