Nanotechnology最新文献

Structural regulation of VS₄cathodes for enhanced aqueous zinc-ion battery performance. 提高水锌离子电池性能的VS4阴极结构调节。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-29 DOI: 10.1088/1361-6528/addac9

Jintao Liu, Fangfang Wu, Yuxi Wang, Junkang Zhang, Jing Zhao, Wenxian Liu, Wenhui Shi, Xiehong Cao

{"title":"Structural regulation of VS4cathodes for enhanced aqueous zinc-ion battery performance.","authors":"Jintao Liu, Fangfang Wu, Yuxi Wang, Junkang Zhang, Jing Zhao, Wenxian Liu, Wenhui Shi, Xiehong Cao","doi":"10.1088/1361-6528/addac9","DOIUrl":"10.1088/1361-6528/addac9","url":null,"abstract":"VS4has garnered significant attentions in aqueous zinc ion batteries (AZIBs) due to its unique structural features and high theoretical capacity. Unfortunately, the volumetric changes and sluggish kinetics of VS4during the electrochemical process often lead to material degradation and structural collapse, thereby limiting the performance of AZIBs. To address these challenges, we propose a structural engineering strategy for VS4to regulate its microstructure through a simple hydrothermal method. This approach enhances the number of active sites and facilitates the diffusion of Zn2+ions, thereby improving the electrochemical performance of VS4in AZIBs. The AZIBs using VS4flower (F-VS4) as the cathode material exhibit significantly enhanced electrochemical performance. The electrochemical reaction mechanism of F-VS4is further elucidated byex-situx-ray diffraction and x-ray photoelectron spectroscopy measurements. This work represents a significant step forward in the development of vanadium sulfide-based cathodes for AZIBs, offering a promising strategy to enhance their electrochemical performance and stability.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144111454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature. 非对称平面氮化镓基纳米二极管的低温光响应。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-29 DOI: 10.1088/1361-6528/addb53

E Pérez-Martín, T González, H Sánchez-Martín, I Íñiguez-de-la-Torre, J Mateos

引用次数: 0

MOF-derived Pt-ZnO nanotubes: toward advanced chemical sensors with high sensitivity and selectivity. mof衍生的Pt-ZnO纳米管：面向高灵敏度和高选择性的先进化学传感器。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-28 DOI: 10.1088/1361-6528/adddc6

Ning Lian, Jiahang Huo, Wei Liu, Zhiheng Zhang, Xin Chen, Yuqing Du, Xinshou Wang, Jian Song, Gang Cheng

{"title":"MOF-derived Pt-ZnO nanotubes: toward advanced chemical sensors with high sensitivity and selectivity.","authors":"Ning Lian, Jiahang Huo, Wei Liu, Zhiheng Zhang, Xin Chen, Yuqing Du, Xinshou Wang, Jian Song, Gang Cheng","doi":"10.1088/1361-6528/adddc6","DOIUrl":"https://doi.org/10.1088/1361-6528/adddc6","url":null,"abstract":"The detection of volatile organic compounds (VOCs), particularly acetone, is critical for applications in environmental monitoring and medical diagnostics, including diabetes detection. Conventional metal oxide semiconductor (MOS) sensors face challenges such as poor selectivity, high operating temperatures, and limited stability. This study addresses these limitations by developing Pt-doped ZnO nanotubes (Pt-ZnO NTs) using a coaxial electrospinning and in-situ growth method. The process effectively incorporates ZIF-8-derived hollow ZnO structures and uniformly distributed Pt nanoparticles to enhance gas sensing performance. Key findings reveal that the 1% Pt-ZnO NTs sensor exhibits exceptional acetone sensitivity (Ra/Rg = 48.2 for 10 ppm), broad detection range (81.2 ppb-50 ppm), reduced operating temperature (240 °C), and robust selectivity against interfering gases. Advanced characterization and theoretical density functional theory (DFT) analysis show that Pt doping increases oxygen vacancy concentration, enhances electron transport, and reduces the material's band gap, contributing to superior sensing capabilities. Additionally, the sensor demonstrates excellent stability, repeatability, and practical applicability in distinguishing diabetic and healthy exhaled breath samples. This research introduces a novel gas sensing platform that integrates metal-organic framework (MOF)-derived structures and noble metal catalysts, offering significant advancements in sensitivity, selectivity, and reliability for VOC detection.&#xD.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144173988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The optoelectronic synergistic properties based on indium-gallium-zinc oxide neuromorphic transistors. 基于铟镓锌氧化物神经形态晶体管的光电协同性能。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-28 DOI: 10.1088/1361-6528/adda51

Zhida Hu, Shun Hu, Minghao Zhang, Wenshuo Wu, Shuangqing Fan, Jie Su

{"title":"The optoelectronic synergistic properties based on indium-gallium-zinc oxide neuromorphic transistors.","authors":"Zhida Hu, Shun Hu, Minghao Zhang, Wenshuo Wu, Shuangqing Fan, Jie Su","doi":"10.1088/1361-6528/adda51","DOIUrl":"10.1088/1361-6528/adda51","url":null,"abstract":"Inspired by the human visual perception system, optoelectronic devices have attracted growing interest in advanced machine vision systems. Despite significant advancements in optical sensors, the synergy between optoelectronics remains underdeveloped. In this study, we propose a transistor fabricated via magnetron sputtering of indium-gallium-zinc oxide (In: Ga: Zn = 1:1:1 mol%) that serves as an inhibitory device, simulating key biological synaptic functions through its electrical properties, including excitatory postsynaptic currents and paired-pulse facilitation. Furthermore, by exploiting the intrinsic photoresponse characteristics of IGZO and the short-term and long-term memory behaviors induced by optical stimulation, we simulate synapses modulated by light of varying wavelengths. As a phototransistor, this device successfully simulates complex synaptic behaviors, including Morse code. It also simulates the Mach bands, a phenomenon of lateral inhibition observed in biology. Additionally, the optoelectronic effect of the phototransistor is applied in neural network recognition, achieving a recognition rate of 85.8%.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144102271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoscale spectroscopic investigation of impact of strain on field-effect mobility of WS₂. 应变对WS2场效应迁移率影响的纳米光谱研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-28 DOI: 10.1088/1361-6528/addacc

Fateme Yekefalah, Thomas Nuytten, Kaustuv Banerjee, Pawan Kumar, Benjamin Groven, Claudia Fleischmann, Ingrid De Wolf

引用次数: 0

A low-cost broadband photodetector based on CsPbBr₃quantum dots/transfer-free eco-friendly graphene heterostructures for fast photoresponse. 基于cspbbr3量子点/无转移环保石墨烯异质结构的低成本宽带光电探测器，用于快速光响应。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-28 DOI: 10.1088/1361-6528/add899

Yi-Chia Cheng, Chih-Yu Lin, Chia-Hsuan Tseng, Meng-Lin Tsai, Sheng-Kuei Chiu, Ji-Lin Shen, Shih-Lun Chen, Chiashain Chuang, Dung-Sheng Tsai

{"title":"A low-cost broadband photodetector based on CsPbBr3quantum dots/transfer-free eco-friendly graphene heterostructures for fast photoresponse.","authors":"Yi-Chia Cheng, Chih-Yu Lin, Chia-Hsuan Tseng, Meng-Lin Tsai, Sheng-Kuei Chiu, Ji-Lin Shen, Shih-Lun Chen, Chiashain Chuang, Dung-Sheng Tsai","doi":"10.1088/1361-6528/add899","DOIUrl":"10.1088/1361-6528/add899","url":null,"abstract":"We have successfully demonstrated CsPbBr3perovskite quantum dots (QDs)/transfer-free eco-friendly (TFEF) graphene heterostructures with broadband and fast photoresponse. At first, the TFEF graphene is grown directly on the SiO2/Si substrates in an atmospheric pressure chemical vapor deposition (APCVD) system with the copper-foil wrapping methods and camphor precursors. Raman mapping image (15 × 15μm2) showed TFEF graphene with high coverage across the surface (∼65% single-layer graphene, ∼15% bilayer graphene, and ∼20% multilayer graphene). After that, CsPbBr3QDs were synthesized and then spin-coated on the TFEF graphene surface to form heterostructures. Compared to pure CsPbBr3QD-based photodetectors (PDs), CsPbBr3QDs/TFEF graphene-based PDs show a higher photo-to-dark current ratio of ∼7.2 at 2 V white light illumination (112 mW cm-2). Furthermore, the CsPbBr3QDs/TFEF graphene-based PDs show a broadband photoresponse range from ultraviolet to near-infrared with a peak responsivity reaching up to 32 mA W-1, a high detectivity (2.2 × 1010cm·Hz1/2/W) and fast operation speed (rise/fall time: ∼7/∼ 14 ms). This study opens avenues to develop low-cost and rapid fabrication processes of perovskite/2D nanomaterial-based PDs for fast optical communication, image capture, and flame detection applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144079160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasmonic catalysis with bi-resonant noble metal-CuFeS₂chalcopyrite hybrid structures. 双共振贵金属- cufes2黄铜矿杂化结构的等离子体催化。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-27 DOI: 10.1088/1361-6528/add93f

Koustav Kundu, Tianhong Ouyang, Björn M Reinhard

{"title":"Plasmonic catalysis with bi-resonant noble metal-CuFeS2chalcopyrite hybrid structures.","authors":"Koustav Kundu, Tianhong Ouyang, Björn M Reinhard","doi":"10.1088/1361-6528/add93f","DOIUrl":"10.1088/1361-6528/add93f","url":null,"abstract":"Both noble metal nanoparticles (NPs) and chalcopyrite (CuFeS2) nanocrystals (NCs) provide resonant absorption in the visible, albeit through different mechanisms. Coherent oscillations of free conduction band electrons give rise to localized plasmons in noble metal NPs, whereas collective oscillations of bound electrons are responsible for quasistatic resonances in CuFeS2NCs. This manuscript reviews the photophysical and photocatalytic properties of both noble metal and chalcopyrite nanostructures as well as direct and indirect charge and energy transfer processes in hybrid structures containing noble metal NPs and either semiconductor NCs or molecular photosensitizers or photocatalysts. CuFeS2NCs share structural similarities with conventional semiconductor NCs, but the availability of collective charge oscillations in the visible facilitates a resonant coupling to localized plasmons in NPs. Hybrid nanostructures containing both metal and chalcopyrite building blocks are examined as a platform for wavelength-dependent charge and energy transfer and bifunctional reactivity for enhanced plasmonic photocatalysis.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144079171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wafer-scale synthesis of transition metal dichalcogenides and van der Waals heterojunctions. 过渡金属二硫族化合物和范德华异质结的晶片尺度合成。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-27 DOI: 10.1088/1361-6528/add9a9

Shiwei Zhang, Yulong Hao, Shijie Hao, Xuemei Lu, Jie Zhou, Chen Fan, Jun Liu, Guolin Hao

{"title":"Wafer-scale synthesis of transition metal dichalcogenides and van der Waals heterojunctions.","authors":"Shiwei Zhang, Yulong Hao, Shijie Hao, Xuemei Lu, Jie Zhou, Chen Fan, Jun Liu, Guolin Hao","doi":"10.1088/1361-6528/add9a9","DOIUrl":"10.1088/1361-6528/add9a9","url":null,"abstract":"Two-dimensional materials, as a promising class of emerging materials, are expected to overcome the technical bottlenecks of silicon-based device miniaturization and enable the continuation of 'Moore's Law' due to their unique physical and chemical properties. Notably, transition metal dichalcogenides (TMDs) and heterojunctions have demonstrated unprecedented potential applications in novel electronic and optoelectronic devices. In recent years, breakthroughs have been continuously made in the preparation techniques and growth strategies of wafer-scale TMDs and heterostructures. Therefore, it is essential to systematically and comprehensively summarize the latest progress in wafer-scale synthesis. In this article, the preparation techniques and strategies of wafer-scale TMDs and heterojunctions are classified and summarized. Firstly, various wafer-scale synthesis techniques are described and the advantages and disadvantages of each technique in wafer-level preparation are compared. On this basis, the synthesis strategies derived from chemical vapor deposition are introduced and discussed comprehensively. Finally, we discuss the challenges and prospects associated with the preparation of wafer-scale materials and propose some feasible solutions.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144086463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft-hard magnetic phase tuning of FeCo nanowire arrays by electrodeposition current density. 电沉积电流密度对FeCo纳米线阵列的软硬磁相位调谐。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-27 DOI: 10.1088/1361-6528/add940

Seyed Javad Hosseini, Mohammad Almasi Kashi, Amir H Montazer

{"title":"Soft-hard magnetic phase tuning of FeCo nanowire arrays by electrodeposition current density.","authors":"Seyed Javad Hosseini, Mohammad Almasi Kashi, Amir H Montazer","doi":"10.1088/1361-6528/add940","DOIUrl":"10.1088/1361-6528/add940","url":null,"abstract":"A better understanding of magnetic phases and interactions in nanomaterials can provide new pathways for the development of tunable magnetic storage media, facilitating their design and integration in nanodevices. Here, we use a pulse electrochemical method, and change the electrodeposition current density (Jed) in the range of 12.50-37.50 mA cm-2in order to fabricate FeCo nanowire arrays (NWAs) in mild-anodized aluminum oxide membranes. While the length and composition of the NWs are not considerably affected with increasingJed, we observe obvious changes in the shape of magnetic hysteresis curves, arising from the coupling of soft-hard phases. By investigating the crystalline properties of the NWAs, the hard phase is attributed to almost Fe50Co50alloy structure, whereas the soft phase is due to the presence of magnetic oxides, including CoO and FeO. We obtain first-order reversal diagrams to study the two phases in more detail, indicating the involvement of interference and complex features. The increasing trends observed in hysteresis curve coercivity and squareness from 416 to 1752 Oe and 0.12-0.80 with increasingJedfrom 12.50 to 37.50 mA cm-2, respectively, are accompanied with significant reductions in soft phase intensity and interphase magnetic interactions. Our results indicate the possibility of tuning soft-hard magnetic phases in FeCo NWAs through controllingJedduring the electrodeposition process in the membranes.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144079186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances in nanomaterials for wearable devices: classification, synthesis, and applications. 可穿戴设备纳米材料的最新进展：分类、合成和应用。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-05-27 DOI: 10.1088/1361-6528/add9a8

Tongju Zhang, Lulu Li, Xidi Sun, Yi Shi, Wen Cheng, Lijia Pan

引用次数: 0