Nanotechnology最新文献

{"title":"Thermally driven oxidation and conductive-to-insulating transition of liquid-metal-printed gallium films for 2D electronics.","authors":"Wuqing Fang, Yun Li, Jun Mo, Haoran Mu, Yuanyuan Shi, Shenghuang Lin","doi":"10.1088/1361-6528/aeb6f6","DOIUrl":"10.1088/1361-6528/aeb6f6","url":null,"abstract":"<p><p>Liquid-metal-derived oxide nanofilms have emerged as promising candidates for scalable electronic materials, yet the oxidation pathway governing their electrical functionality remains poorly understood. Here, we report a systematic study on the thermally driven oxidation behavior of liquid-metal-printed gallium films and its decisive role in inducing a conductive-to-insulating transition for two-dimensional (2D) electronics. Ultrathin gallium-based films were prepared through a dewetting-enabled printing process under ambient conditions, yielding smooth and transferable films with single-layer thicknesses of ∼4.5 nm. The as-printed films exhibit partial surface oxidation while retaining residual metallic gallium, resulting in conductive vertical transport. Pure oxygen exposure at room temperature leads mainly to surface adsorption of oxygen species and fails to achieve complete oxidation. In contrast, thermal annealing in oxygen-containing atmosphere progressively converts metallic Ga into gallium oxide, as evidenced by x-ray photoelectron spectroscopy. High-temperature treatment further induces crystallization into polycrystalline<i>β</i>-Ga₂O₃, confirmed by x-ray diffraction and Raman spectroscopy. Consequently, the printed films undergo a pronounced conductive-to-insulating transition, exhibiting pA-level leakage current, and a dielectric constant of ∼4.2. When integrated as gate dielectrics in back-gated MoS₂field-effect transistors, the devices deliver an on/off ratio of ∼10⁶and a minimum subthreshold swing of 74 mV dec^-1. This work clarifies the thermal oxidation mechanism of liquid-metal-printed gallium films and establishes a scalable route toward functional dielectric layers for next-generation 2D electronics.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149238932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MeO-2PACz-mediated interfacial engineering for strain regulation in efficient narrow-bandgap Sn-Pb perovskite solar cells.","authors":"Baichuan Tian, Dazheng Chen, Lisong Ding, Tianjiao Han, Fengqing He, Yan Gao, Li Geng, Yanshang Ba, Zeyulin Zhang, Weidong Zhu, He Xi, Yue Hao, Chunfu Zhang","doi":"10.1088/1361-6528/aebb16","DOIUrl":"10.1088/1361-6528/aebb16","url":null,"abstract":"<p><p>Compositional engineered narrow-bandgap (NBG) Sn-Pb perovskites with an intrinsic bandgap of 1.2-1.3 eV have emerged as promising photovoltaic materials, holding tremendous application prospects in tandem solar cells, near-infrared photodetection and imaging, as well as building-integrated photovoltaics. However, their practical applications are severely hampered by severe Sn²⁺oxidation, mismatched crystallization and large interfacial compressive strain between perovskite and hole transport layer. Herein, we adopt co-additives to fundamentally suppress Sn²⁺oxidation, and further construct a MeO-2PACz self-assembled monolayer (SAM) buried interface to relieve bottom interfacial compressive strain of perovskite films. The SAM buffer layer mitigates lattice and thermal expansion mismatch-induced strain, reduces lattice distortion and interfacial defects, and optimizes interfacial energy level alignment simultaneously. Benefiting from the above interfacial engineering, the oxidation of Sn²⁺in NBG Sn-Pb perovskite absorbers is remarkably inhibited. As a result, the optimized Sn-Pb perovskite devices deliver a power conversion efficiency of 20.50%. In addition, the unencapsulated devices with synergistic modification of additive engineering and MeO-2PACz interfacial treatment exhibit exceptional long-term durability. Specifically, the devices maintain 95% of the original efficiency after 1000 h of ambient exposure, and retain 93% of their initial efficiency after 20 h thermal aging at 85 °C in a nitrogen atmosphere.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149299137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of switching characteristics in protonic ECRAM through density-controlled ZrO₂electrolyte via low-temperature atomic layer deposition.","authors":"Minwoo Jeon, Youngdong Kim, Daeseok Lee, Chuljun Lee","doi":"10.1088/1361-6528/aeb9e6","DOIUrl":"10.1088/1361-6528/aeb9e6","url":null,"abstract":"<p><p>Proton-based electrochemical random-access memory (H-ECRAM) has attracted attention as a promising emerging memory for neuromorphic computing due to its analog conductance modulation and high energy efficiency. Atomic layer deposition (ALD) is attractive due to its excellent conformality and scalability. However, the inherently high density of ALD-grown electrolyte films limits ionic transport, leading to degraded switching performance of H-ECRAM. In this work, we address this issue by engineering the density of ZrO₂electrolytes through low-temperature ALD. By reducing the deposition temperature, the film density is effectively decreased and density-controlled ZrO₂electrolyte exhibits significantly improved ionic mobility. It contributes to a substantial enhancement in switching characteristics, such as larger conductance modulation, an improved on/off ratio, and enhanced weight update linearity. These results show a feasibility that density-controlled ALD electrolyte can offer potential for scalable and high-performance neuromorphic hardware.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149287931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoporous gold with tunable morphology by electrochemical dealloying of ordered Cu 3 Au in low concentration acids.","authors":"Yaning Li, Guangzhong Li, Wenbin Gao, Jintao Zhang, Hao Wang","doi":"10.1088/1361-6528/aebe37","DOIUrl":"https://doi.org/10.1088/1361-6528/aebe37","url":null,"abstract":"<p><p>Nanoporous gold has been produced by the electrochemical dealloying of ordered Cu 3 Au ribbons with a thickness of 50 μm ribbons. Potentiostatic and Galvanostatical methods were used to control the dealloying process in 0.2M HNO 3 , 0.2 M HClO 4 and 0.2 M H 2 SO 4 solutions, respectively. The average ligament sizes of nanoporous gold by Potentiostatic method in sulfuric acid and nitric acid solutions, were 10±5 nm and 22±7 nm, respectively. The nanopores etched by perchloric acid had a typical two kinds of nanoporous structures l30 ± 10 nm and 42 ± 10 nm.The results indicate that the dealloying provides a convenient route to convert Cu₃Au into functional catalytic materials. By finely tuning the dealloying conditions applied current density, the porosity, ligament size, residual Cu content, and surface chemical state of the product can be tailored at the nanoscale, enabling systematic optimization of the catalytic performance.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149343028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical reinforcement of 3D-printed polymer-derived ceramics with boron nitride nanotubes.","authors":"Md Asif Iqbal, Dingli Wang, Nasim Anjum, Anisul Islam Suva, Changhong Ke","doi":"10.1088/1361-6528/aeb812","DOIUrl":"https://doi.org/10.1088/1361-6528/aeb812","url":null,"abstract":"<p><p>Additive manufacturing (AM), or three-dimensional (3D) printing, has the potential to transform the high-resolution fabrication of polymer-derived ceramics (PDCs) and broaden their applications. However, the inherently porous microstructure of PDCs, often exacerbated by AM, significantly degrades their mechanical performance, posing a major scientific and technological challenge. In this work, we investigate the mechanical reinforcement of 3D-printed PDCs using boron nitride nanotubes (BNNTs). Incorporating a small amount of BNNTs (up to 0.3 wt.%) into polymer-derived silicon oxycarbide (SiOC) fabricated by digital light processing substantially improves bulk mechanical properties. Compared with pure PDC pyrolyzed at 1000 °C, the 0.3 wt.% BNNT-PDC annealed at 1400 °C exhibits approximately 106% higher flexural modulus, 120% higher flexural strength, and 272% higher hardness. The maximum toughness is obtained for the 0.3 wt.% BNNT-PDC pyrolyzed at 1000 °C, representing an approximately 148% improvement over pure PDC processed at the same temperature. These enhancements are attributed to the synergistic effects of direct BNNT reinforcement, nanotube-matrix interactions, BNNT-mediated microstructural evolution, and high-temperature-induced evolution of the ceramic matrix. Collectively, these findings provide new insights into the interplay among processing, microstructure, interfacial interactions, and mechanical performance in BNNT-reinforced PDCs, establishing a foundation for the rational design and AM of next-generation ceramic components with enhanced strength, toughness, and reliability.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"37 44","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149334585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Energy-band alignment of stacked single-crystalline Si/<i>α</i>-Ga₂O₃p-n heterojunctions.","authors":"Eungyeol Shin, Yujin Lee, Sola Woo, Jaewon Jang, Kwangeun Kim","doi":"10.1088/1361-6528/aeb80f","DOIUrl":"https://doi.org/10.1088/1361-6528/aeb80f","url":null,"abstract":"<p><p>A stacked single-crystalline Si/<i>α</i>-Ga₂O₃p-n heterojunction was formed by transferring a 100 nm p-Si nanomembrane onto an<i>α</i>-Ga₂O₃epiwafer. The<i>α</i>-Ga₂O₃layer exhibited a (110) x-ray diffraction reflection, and the epi-layer at the Si/<i>α</i>-Ga₂O₃interface had a valence-band maximum located 4.29 ± 0.10 eV below the Fermi-level. X-ray photoelectron spectroscopy depth profiling revealed decreases of 0.11 eV in the Si 2p binding energy and 0.35 eV in the Ga 3d binding energy from the bulk-like regions to the interface, consistent with upward band bending on both sides at the junction interface. Applying the Kraut method with the valence-band offset defined as<i>E</i>_V(Si) -<i>E</i>_V(<i>α</i>-Ga₂O₃) gave 3.93 eV; the corresponding conduction-band offset was 0.25 eV. The enhanced Si-O and Ga-O components indicate an ultrathin oxide-containing bonding region formed during heterojunction integration. Rather than being treated as a thick parasitic oxide, this region is interpreted as a thin passivating interlayer that does not preclude reliable extraction of the effective band alignment of the as-fabricated junction. Energy band profiles in equilibrium and under forward and reverse bias were calculated using technology-computer-aided design. The fabricated p-n heterojunction diode exhibited rectifying current density-voltage characteristics with an ideality factor of 1.47. These results provide an experimentally constrained band alignment for stacked Si/<i>α</i>-Ga₂O₃p-n heterojunctions and support their development for bipolar electronic devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"37 44","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149323102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantitative determination of external and spontaneous quantum efficiencies in SiGeSn/GeSn quantum wells using Lambertian-referenced photoluminescence.","authors":"Enbo Yang, Xuehuan Ma, Baohua Li, Wei Du, Shui-Qing Yu","doi":"10.1088/1361-6528/aeb897","DOIUrl":"10.1088/1361-6528/aeb897","url":null,"abstract":"<p><p>GeSn quantum wells (QWs) are promising active regions for monolithically integrated group-IV mid-infrared light emitters, yet their radiative efficiency has not been quantitatively established because of the lack of a reproducible, system-independent measurement methodology. Here, we systematically determine the external quantum efficiency (EQE) and spontaneous emission quantum efficiency (SQE) of SiGeSn/GeSn single- and double-QW (SQW and DQW) structures using a Lambertian-referenced photoluminescence (PL) technique. By combining calibrated EQE measurements with a photon extraction and recycling model, the intrinsic SQE is quantitatively extracted, enabling direct comparison across different material systems and experimental platforms. Temperature- and excitation-dependent measurements (10-300 K, 5-200 mW) reveal peak EQE/SQE values of 14.7%/85.9% for the SQW and 19.8%/89.7% for the DQW at 10 K, representing a substantial improvement over a previously reported GeSn QW reference sample measured under identical calibration conditions. The consistently high efficiencies obtained from independently fabricated SQW and DQW structures confirm the reproducibility of the optimized epitaxial growth process and indicate significantly improved material quality.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149245360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights into the exciton- tryptophan coupling and corona formation of the serum albumin with cerium oxide nanoparticle along with temperature dependent denaturation and unfolding of protein.","authors":"Amit Kumar Bhunia, Souradeep Roy, Satyajit Saha, Prasanta Kumar Guha","doi":"10.1088/1361-6528/aeb429","DOIUrl":"10.1088/1361-6528/aeb429","url":null,"abstract":"<p><p>In this report, the coupling of the excitonic peak of the grown semiconducting cerium oxide (CeO₂) nanoparticles (NPs) (∼350 nm) with tryptophan (∼278 nm) along with biophysical study of interaction have been studied through UV-Vis, photoluminescence, and circular dichroism spectroscopy, Time correlated Single Photon Counting, dynamic light scattering, and high resolution transmission electron microscopy (HRTEM), Atomic force microscopy (AFM) imaging. The interaction of small sizes CeO2 NPs with serum albumin protein (SAP) showed formation of ground state complex with association constant (<i>k</i>) varied from 8.7×10³(<i>μ</i>M)^-1-4.8×10³(<i>μ</i>M)^-1. The kinetics of the interaction study showed that the initial corona formation binding time was ∼9 min, and the binding induced albumin reorganization time was ∼248.5 min and unfolding was much prominent than binding. Dynamic quenching was found to be the major mechanism for albumin, with an exothermic nature observed during the interaction study across the temperature range from room temperature to human body temperature (298 K-312 K). The energy transfer efficiency varied from ∼75.9% to ∼87.4% with temperature. The visualized images of HRTEM and AFM showed formation of albumin corona and protein fibrillation. At body temperature the probability of soft corona formation was more prominent than room temperature. The hydrodynamic sizes of the nano-protein corona were changes from 33.5 nm to 80.5 nm and ultrafast life time of the corona changes from 6.1 ns to 4.05 ns with increment of temperature. The percentage change in the ratio of<i>β</i>strand to<i>α</i>-helix of the SAP has been occurred from ∼15% to ∼26.03% with change in the corona temperature from 298 K to 312 K.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149182584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Year-long aqueous colloidal stability and enhanced AC magnetic heating of N,N-Dimethyl dodecyl amine N-Oxide (DDAO) functionalized magnetite ferrofluids.","authors":"Kowshika Vijayan, Niroj Kumar Sahu, Ashutosh Mahajan","doi":"10.1088/1361-6528/aeb130","DOIUrl":"10.1088/1361-6528/aeb130","url":null,"abstract":"<p><p>Combining durable colloidal stability with strong magnetic heating in a single aqueous ferrofluid (FF) is a long-standing obstacle in biomedical hyperthermia, because the coating that disperses the nanoparticles typically weakens their magnetic response. Aqueous magnetite FFs must therefore satisfy three requirements that are mediated by one nanoparticle surface and are consequently difficult to reconcile such as durable colloidal stability, retention of the magnetic response and efficient field-driven heating. Here, magnetite (Fe₃O₄) nanoparticles were synthesized by alkaline co-precipitation and capped<i>in situ</i>with N,N-Dimethyl dodecyl amine N-Oxide (DDAO), an inexpensive zwitterionic amine-oxide surfactant. X-ray diffraction and HRTEM confirm a phase-pure, monocrystalline core of approximately 10.43 nm (particle size). FTIR and XPS verify the presence of DDAO and support coordination anchored through itshead-group oxygen to surface iron. The functionalized particles show markedly improved hydrophilicity and colloidal stabilization, with the water contact angle decreasing from 30.2° for the uncoated reference to 16.6° for DDAO-Fe₃O₄and the zeta potential becoming strongly negative at approximately -56.5 mV. The DDAO FF remains visually stable in water for one year, whereas the uncoated reference rapidly sediments. Although the non-magnetic organic shell and surface-spin perturbation moderately reduce the saturation magnetization from 63.62 to 53.81 emu g^-1, superparamagnetic behaviour is retained. DDAO-Fe₃O₄exhibits a higher SAR than the uncoated reference at every concentration, reaching 222.5 W g^-1at 0.5 mg ml^-1, about 40% above the reference at 443 Oe and 313 kHz. With closely matched magnetic cores, the heating enhancement is attributed primarily to improved dispersion, reduced aggregation-driven dipolar coupling and retention of active Néel and Brownian relaxation channels. MTT assays showed IC₅₀= 68.52<i>µ</i>g ml^-1in HeLa cells, while L929 cells retained 79% viability at 100<i>µ</i>g ml^-1, indicating comparatively lower normal-cell cytotoxicity. This work demonstrates that a single amine-oxide surfactant can integrate surface hydrophilicity, year-long aqueous stability and enhanced magnetic heating from one interfacial coordination in one practical FF formulation.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149128048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterisation of vertical gate-all-around tunnel FET using modulation-doped InGaAs nanowire/Si junction on SOI wafer.","authors":"Kai Fujimoto, Keita Taniyama, Yuki Azuma, Katsuhiro Tomioka","doi":"10.1088/1361-6528/aebbc4","DOIUrl":"https://doi.org/10.1088/1361-6528/aebbc4","url":null,"abstract":"<p><p>Tunnel field-effect transistors (TFETs) utilising quantum tunnel transport are expected as promising candidates for low-power switching applications, primarily due to their potential to overcome the thermionic limit of 60 mV/dec in subthreshold slope (SS) of conventional FETs. Despite this potential for low-voltage switching operation, TFETs face serious challenges for practical circuit integration, most notably low on-state currents and a narrow gate voltage window for maintaining steep SS characteristics. In this report, we characterised selective-area growth of modulation-doped core-multishell (CMS) nanowires (NWs) consisting of an InGaAs/InP/AlInAs/δ-doped AlInAs/AlInAs/InGaAs heterostructure on InGaAs NW sidewalls on silicon-on-insulator (SOI) substrates and vertical gate-all-around (VGAA) TFETs using the CMS NW-channels on SOI. The TFET devices exhibited robust gate modulation of the tunnelling current at the n-InGaAs/p-SOI junction, achieving a minimum SS of 35 mV/dec at a low drain-source voltage. While the TFETs are promising, the enhancement of the on-state current was constrained by an unintentionally thick InP barrier layer and over-etching to reveal the contact layer, both of which induce a non-ideal distribution of the internal electrical field. These findings underscored that precise dimensional control of the CMS architecture and moderate junction engineering at the InGaAs/Si heterointerface were critical for achieving high-performance VGAA-TFETs in practical applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149299145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}