Nanotechnology最新文献_第2页

Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization. 稀磁半导体（Ga, Mn）As 薄膜中的室温铁磁性 MnGa 纳米粒子：制备与表征。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad8e6d

Juanmei Duan, Zichao Li, Viktor Begeza, Shuangchen Ruan, Yujia Zeng, Wei Tang, Hsu-Sheng Tsai

{"title":"Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization.","authors":"Juanmei Duan, Zichao Li, Viktor Begeza, Shuangchen Ruan, Yujia Zeng, Wei Tang, Hsu-Sheng Tsai","doi":"10.1088/1361-6528/ad8e6d","DOIUrl":"https://doi.org/10.1088/1361-6528/ad8e6d","url":null,"abstract":"The diluted magnetic semiconductor, (Ga, Mn) As, with the unique advantage of manipulating the spin and charge was widely investigated in the scientific community and considered as a potential material for the spintronic devices. However, its Curie temperature (Tc), which is limited to around 200 K, hinders the research progress of diluted magnetic semiconductors for potential device applications. Herein, we propose an approach to prepare the MnGa nanoparticles embedded in (Ga, Mn)As matrix using the magnetron sputtering deposition of Mn on GaAs surface, followed by the nano-second pulsed laser annealing, which gives a Tc above 400 K. We demonstrate that the MnGa nanoparticles are only formed in (Ga, Mn)As during the nano-second pulsed laser annealing under a critical range of energy density (0.4-0.5 J/cm2). This method for preparing the hybrid system of ferromagnetic metal/dilute magnetic semiconductor builds a platform for exploring the interesting spin transport phenomenon and is promising for the application of spintronic devices.&#xD.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142576474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CRISPR-based strategies for sample-to-answer monkeypox detection: current status and emerging opportunities. 基于 CRISPR 的猴痘样本检测策略：现状与新机遇》。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad892b

Md Ahasan Ahamed, Anthony J Politza, Tianyi Liu, Muhammad Asad Ullah Khalid, Huanshu Zhang, Weihua Guan

{"title":"CRISPR-based strategies for sample-to-answer monkeypox detection: current status and emerging opportunities.","authors":"Md Ahasan Ahamed, Anthony J Politza, Tianyi Liu, Muhammad Asad Ullah Khalid, Huanshu Zhang, Weihua Guan","doi":"10.1088/1361-6528/ad892b","DOIUrl":"10.1088/1361-6528/ad892b","url":null,"abstract":"The global health threat posed by the Monkeypox virus (Mpox) requires swift, simple, and accurate detection methods for effective management, emphasizing the growing necessity for decentralized point-of-care (POC) diagnostic solutions. The clustered regularly interspaced short palindromic repeats (CRISPR), initially known for its effective nucleic acid detection abilities, presents itself as an attractive diagnostic strategy. CRISPR offers exceptional sensitivity, single-base specificity, and programmability. Here, we reviewed the latest developments in CRISPR-based POC devices and testing strategies for Mpox detection. We explored the crucial role of genetic sequencing in designing crRNA for CRISPR reaction and understanding Mpox transmission and mutations. Additionally, we showed the integration of CRISPR-Cas12 strategy with pre-amplification and amplification-free methods. Our study also focused on the significant role of Cas12 proteins and the effectiveness of Cas12 coupled with recombinase polymerase amplification (RPA) for Mpox detection. We envision the future prospects and challenges, positioning CRISPR-Cas12-based POC devices as a frontrunner in the next generation of molecular biosensing technologies.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11533882/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142470508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NiO/MnO₂coated on carbon felt as an electrode material for supercapacitor applications. 碳毡上包覆的 NiO/MnO2 作为超级电容器应用的电极材料。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad87fa

Sadegh Azizi, Mohammad Bagher Askari, Seyed Mohammad Rozati, Mojtaba Masoumnezhad

{"title":"NiO/MnO2coated on carbon felt as an electrode material for supercapacitor applications.","authors":"Sadegh Azizi, Mohammad Bagher Askari, Seyed Mohammad Rozati, Mojtaba Masoumnezhad","doi":"10.1088/1361-6528/ad87fa","DOIUrl":"10.1088/1361-6528/ad87fa","url":null,"abstract":"Transition metal oxides have demonstrated excellent capability for charge storage when used in supercapacitor electrodes. This study undertook the hydrothermal synthesis of bimetallic nickel and manganese oxide (NiO/MnO2) on a carbon-felt (CF) substrate. NiO/MnO2/CF electrode was characterized and examined in a three-electrode system in a potassium hydroxide electrolyte. Cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge analyses revealed Faradaic behavior during charge storage, a specific capacity of 1627 F g-1, and a stability of 96.8% after 5000 consecutive charge-discharge cycles. Subsequent investigations were conducted in a two-electrode system for constructing a symmetrical supercapacitor using the NiO/MnO2/CF electrode. The energy and power densities were determined as 43Wh kg-1and 559 W kg-1. Additionally, the stability of the constructed supercapacitor device was examined over 5000 consecutive cycles, verifying a 92% stability through charge-discharge cycles. Finally, the fabricated supercapacitor was utilized to power an LED lamp, successfully maintaining the illumination for 53 s.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142470515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In situRaman investigation to electrochemical synthesis of ammonia on Pd nanocrystals. 在钯纳米晶体上电化学合成氨的原位拉曼研究。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad8164

Xiaoxia Bai, Jingying Luo, Keming Wu, Congcong Sun, Haili Pang, Hui Zhang, Ajit Khosla

引用次数: 0

Application of NiS modified WS₂/TiO₂heterostructure in photocathodic protection. NiS 修饰的 WS2/TiO2 异质结构在光阴极保护中的应用。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad8b53

Hanbing Wu, Zhiming Bai, Hongmei Cheng, Zhengqing Zhou, Zhibo Zhang

{"title":"Application of NiS modified WS2/TiO2heterostructure in photocathodic protection.","authors":"Hanbing Wu, Zhiming Bai, Hongmei Cheng, Zhengqing Zhou, Zhibo Zhang","doi":"10.1088/1361-6528/ad8b53","DOIUrl":"10.1088/1361-6528/ad8b53","url":null,"abstract":"Stainless steel, as a popular corrosion resistant material, is still vulnerable to pitting corrosion in the marine environment. Therefore, in order to ensure the safety of stainless steel in the marine environment, it is necessary to implement corresponding protective measures. Titanium dioxide (TiO2), as an N-type semiconductor with excellent photoelectric properties, is widely used in the field of cathodic protection. However, as a photogenerated cathodic corrosion protection material, TiO2has the disadvantages of low conductivity and high carrier recombination rate. Therefore, WS2and NIS were introduced in this paper to modify it. TiO2/WS2/NiS (TWN) composites with Type-Ⅱ heterojunction structure were prepared by hydrothermal method and titration method. The results reveal TWN5 showed the best photoelectrochemical (PEC) performance, and the photocurrent density was 69% higher than that of a pure TiO2photoanode, and the photochemical and photocathodic protection performance was significantly better than that of pure TiO2. Under simulated ocean conditions, the self-corrosion potential of 304ss combined with TW5 and TWN5 photoanodes is reduced to -0.64 V and -0.7 V, respectively. The main reason is that the contact surfaces of WS2and TiO2formed a Type II heterostructure, which accelerates the separation and diffusion processes of photoinduced carriers. In addition, the plasmon resonance effect of NiS improves the ability to absorb visible light, and the metallic-like feature of NiS also promotes charge separation.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142504568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable P-type doping and improved conductance of few-layer WSe2 via Lewis acid. 通过路易斯酸实现可控 P 型掺杂并提高少层 WSe2 的电导率。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad8e45

Tianjian Ou, Cong Xiao, Zhanjie Qiu, Yuan Zheng, Hancheng Yang, Yewu Wang, Mengge Li, Xiaoxiang Wu, Wenxuan Guo

引用次数: 0

Exploring nonlinear correlations among transition metal nanocluster properties using deep learning: a comparative analysis with LOO-CV method and cosine similarity. 利用深度学习探索过渡金属纳米簇特性之间的非线性相关性：与 LOO-CV 方法和余弦相似性的比较分析。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-04 DOI: 10.1088/1361-6528/ad892c

Zahra Nasiri Mahd, Alireza Kokabi, Maryam Fallahzadeh, Zohreh Naghibi

{"title":"Exploring nonlinear correlations among transition metal nanocluster properties using deep learning: a comparative analysis with LOO-CV method and cosine similarity.","authors":"Zahra Nasiri Mahd, Alireza Kokabi, Maryam Fallahzadeh, Zohreh Naghibi","doi":"10.1088/1361-6528/ad892c","DOIUrl":"10.1088/1361-6528/ad892c","url":null,"abstract":"A novel approach is introduced for the rapid and accurate correlation analysis of nonlinear properties in Transition Metal (TM) clusters utilizing the Deep Leave-One-Out Cross-Validation technique. This investigation demonstrates that the Deep Neural Network (DNN)-based approach offers a more efficient predictive method for various properties of fourth-row TM nanoclusters compared to conventional Density Functional Theory methods, which are computationally intensive and time-consuming. The feature space, also known as descriptors, is established based on a broad spectrum of electronic and physical characteristics. Leveraging the similarities among these clusters, the DNN-based model is employed to explore the correlations among TM cluster properties. The proposed method, in conjunction with cosine similarity, achieves remarkable accuracy up to 10-9 for predicting total energy, lowest vibrational mode, binding energy, and HOMO-LUMO energy gap of TM2, TM3, and TM4nanoclusters. By analyzing correlation errors, the most closely coupled TM clusters are identified. Notably, Mn and Ni clusters exhibit the highest and lowest levels of energy coupling with other TMs, respectively. Generally, energy prediction for TM2, TM3, and TM4clusters exhibit similar trends, while an alternating behavior is observed for vibrational modes and binding energies. Furthermore, Ti, V, and Co demonstrate the highest binding energy correlations with TM2, TM3, and TM4sets, respectively. Regarding energy gap predictions, Ni exhibits the strongest correlation in the smallest TM2clusters, while Cr shows the highest dependence in TM3and TM4sets. Lastly, Zn displays the largest error in HOMO-LUMO energy gap across all sets, indicating distinctive independent energy gap characteristics.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142470510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm. 基于扫描电子显微镜成像和阈值分割算法的电子束光刻残留抗蚀剂定量评估。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-11-01 DOI: 10.1088/1361-6528/ad8a6a

Qingyuan Mao, Jingyuan Zhu, Zhanshan Wang

{"title":"Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm.","authors":"Qingyuan Mao, Jingyuan Zhu, Zhanshan Wang","doi":"10.1088/1361-6528/ad8a6a","DOIUrl":"10.1088/1361-6528/ad8a6a","url":null,"abstract":"Electron beam lithography is a critical technology for achieving high-precision nanoscale patterning. The presence of resist residues in the structures can significantly affect subsequent processes such as etching and lift-off. However, the evaluation and optimization of resist residues currently relies on qualitative observations like scanning electron microscopy (SEM), necessitating multiple experiments to iteratively optimize exposure parameters, which is not only labor-intensive but also costly. Here, we propose a quantitative method to evaluate resist residues. By processing the obtained SEM images using a threshold segmentation algorithm, we segmented the resist structure region and the residual resist region in the images. The grayscale values of these two regions are identified, and the residues are quantified based on the ratio of these values. Furthermore, a relationship curve between the residue amount and the exposure dose is plotted to predict the optimal exposure dose. To validate this method, we fabricated hydrogen silsesquioxane annular grating structures with 30 nm linewidth and analyzed the residue levels over an exposure dose range of 2000-2500μC cm-2, predicting the optimal dose to be 1800μC cm-2and confirming this through experiments. Additionally, we applied the method to polymethyl methacrylate and ZEP-520A structures, achieving similarly accurate results, further confirming the method's general applicability. This method has the potential to reduce experimental costs and improve yield and production efficiency in nano fabrication.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142504569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate. 图案化衬底上 In(Ga)As/GaAs 量子点的场控生长。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-31 DOI: 10.1088/1361-6528/ad8d61

Xiaoyang Zhao, 雯刘, Yidi Bao, Xiaoling Chen, Chunxue Ji, Guiqiang Yang, Bo Wei, Fuhua Yang, Xiaodong Wang

引用次数: 0

Effect of hydrogen sulfide concentration on two-dimensional SnS₂film by atomic layer deposition in annealing process. 退火过程中原子层沉积硫化氢浓度对二维 SnS2 薄膜的影响

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-30 DOI: 10.1088/1361-6528/ad89b7

Heejun Yoon, Hyeongtag Jeon

{"title":"Effect of hydrogen sulfide concentration on two-dimensional SnS2film by atomic layer deposition in annealing process.","authors":"Heejun Yoon, Hyeongtag Jeon","doi":"10.1088/1361-6528/ad89b7","DOIUrl":"10.1088/1361-6528/ad89b7","url":null,"abstract":"Two-dimensional materials are widely studied due to its unique physical, optical, electrical properties, and good compatibility with various synthesis methods. And among the many fabrication methods, tin disulfide (SnS2) material, a two-dimensional (2D) material that can be achieved with accurate thickness control using atomic layer deposition (ALD), high uniformity and conformality even at low process temperatures is attracting attention. However, since the crystallinity of the thin film is low at a low process temperature, various post-annealing methods are being studied to compensate for film quality. In this work, we compared the crystal structures, chemical binding energies, and electrical properties of the thin films by post-annealing SnS2thin films according to the hydrogen sulfide concentrations of 4.00% and 99.99% in the hydrogen sulfide atmospheres. The crystallinity, grain size, and carrier concentrations of the SnS2thin film were the highest at a post-annealing temperature of 350 °C at a hydrogen sulfide concentration of 99.99%, and the chemical binding energies also corresponded with the standard Sn4+states, forming a pure 2D-hexagonal SnS2phase. In addition, SnS2thin films deposited via ALD showed high uniformity and conformality in large-scale wafers and trench structure wafers.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142470509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0