Nanotechnology最新文献

{"title":"Label-free electrochemical-based biosensor for gene-phosphatidylinositol mannosides detection in urine for the determination of multidrug-resistant tuberculosis.","authors":"Dinesh R Rotake, Jitendra B Zalke, Arpita Parakh, Shubham C Anjankar, Shiv Govind Singh, Ranjana Singh","doi":"10.1088/1361-6528/ae0b79","DOIUrl":"10.1088/1361-6528/ae0b79","url":null,"abstract":"<p><p>Tuberculosis (TB) is a significant public health issue, and the existing diagnostic tests have shortcomings that cause delays in initiating treatment. In this study, we designed a<i>Gene-pimB</i>-based biosensor for the determination of TB and tested it using an electrochemical technique. The<i>Gene-pimB</i>has been reported to be upregulated in mannose-capped lipoarabinomannan (manLAM) in multidrug-resistant TB (MDR-TB). Due to its link with drug resistance,<i>Gene-pimB</i>holds promise as a biomarker for identifying MDR-TB strains. In this work, the biosensor is fabricated using graphite-zinc oxide nanofibers (GPH-ZnO NFs), which are generated using electrospinning and deposited on glassy carbon electrodes. The GPH-ZnO functionalized electrode were further functionalized with MSA/EDC/NHS protocol to provide efficient immobilization which enable the effective binding of pimB-sequences to the nanofibers on the electrodes. In addition, the<i>Gene-pimB</i>hybridization on biosensors immobilized with<i>Gene-pimB</i>probe sequences was quantified using cyclic voltammetry (CV), differential pulse voltammetry (DPV), and electrochemical impedance spectroscopy (EIS) techniques. The experimental tests revealed that the limit of detection (LoD) for CV is 0.1482 pM ml^-1, for DPV it is 0.196 pM ml^-1, and for EIS it is 0.302 pM ml^-1. Our findings suggest that<i>Gene-pimB</i>may prove to be a useful technique in the creation of novel tests for TB prognosis. The efficacy of the developed biosensor was confirmed by a hybridization sensing assay including targeted short oligonucleotide sequences (probe) and<i>Gene-pimB</i>(target) isolated from the urine sample. To assess its potential for clinical detection, urine samples were artificially spiked with the gene to simulate conditions encountered in clinical diagnostics. This approach allows for evaluating the feasibility of detecting<i>Gene-pimB</i>in a non-invasive manner, which could aid in the early identification of drug-resistant TB cases and improve diagnostic strategies for effective disease management.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145150215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of nitrogen-vacancy defects in graphitic carbon nitride on hydrogen adsorption in quartz-crystal microbalance sensor for hydrogen gas.","authors":"Yasushi Ishiguro, Osuke Uemura, Kazuya Kanasugi, Takashi Tachiki, Kenji Hirakuri","doi":"10.1088/1361-6528/ae0b77","DOIUrl":"10.1088/1361-6528/ae0b77","url":null,"abstract":"<p><p>A graphitic carbon nitride (g-C3N4) with nitrogen-vacancy defects was synthesized by calcination of a mixture of melamine and potassium hydroxide (KOH). The nitrogen/carbon ratio (N/C) of the g-C3N4 film decreased with the addition of KOH, indicating that the KOH addition could control the nitrogen-vacancy defects in the g-C3N4. The g-C3N4 films with nitrogen-vacancy defects were formed on a quartz crystal substrate. The change in the resonant frequency of the crystal was measured before and after the introduction of hydrogen gas, utilizing the quartz crystal microbalance (QCM) method. This approach was employed to characterize the hydrogen sensor effectively. The QCM-type sensor with the defective g-C3N4 film had a different frequency response to the hydrogen than the sensor with pristine g-C3N4 film synthesized without KOH addition. That is, the resonant frequency of the defective g-C3N4 decreased with the introduction of hydrogen, while that of pristine g-C3N4 was observed to increase. The reduced frequency of the defective g-C3N4 is probably due to the formation of chemical bonds with hydrogen (C-H) as observed in the FT-IR measurements. Our findings show that the introduction of nitrogen-vacancy defects into the g-C3N4 significantly impacts the characteristics of QCM-type hydrogen sensors. Moreover, controlling the amount of nitrogen vacancies introduced has a significant effect on the frequency response to the hydrogen gas. The QCM-type sensor utilizing g-C3N4 is anticipated to find applications in a range of gas sensors in the future, contingent upon the progress of research focused on controlling the precise number of nitrogen-vacancy defects.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145150157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga₂O₃induced by native defects.","authors":"H Zeng, C Ma, L J Hu, Y R Xue, M Wu","doi":"10.1088/1361-6528/ae0941","DOIUrl":"10.1088/1361-6528/ae0941","url":null,"abstract":"<p><p>Understanding the effects of native oxygen vacancy (V_O) and gallium vacancy (V_Ga) in two-dimensional (2D) Ga₂O₃semiconductors is critical for optimizing device efficiency and developing innovative applications. In this work, the structural stability, electronic structure, carrier mobility and conductivity of thickness-dependent 2D Ga₂O₃induced by native V_Oand V_Gaare systematically studied. In Ga₂O₃V_Oconfiguration, the newly occupied mid-gap states primarily composed of O-2p, Ga-3p, and Ga-3d orbitals are formed, demonstrating a deep donor feature. The created impurity levels lower the bandgaps of monolayer, bilayer, and trilayer Ga₂O₃V_Oto 1.60, 1.64, and 1.53 eV, respectively. The electron mobility exhibits a high value up to ∼12 154.89 cm²V^-1s^-1in bilayer Ga₂O₃V_O. Shallow acceptor states primarily composed of O-2p and Ga-3d orbitals are introduced for Ga₂O₃V_Gaconfiguration, suggesting the effective p-type doping behavior. The bandgaps of monolayer, bilayer, and trilayer Ga₂O₃V_Gaare of respectively 2.31, 1.90, and 1.84 eV, accompanying with the monotonous decreasing of hole mobilities from 261.46-85.75 cm²V^-1s^-1along<i>x</i>-direction. Meanwhile, the thickness dependent n-type and p-type conductivities are endowed with the similar trends as those of carrier mobilities. Distinct dimensional induced band features and transport properties have been resolved in V_Oand V_Gacases. The high carrier mobility and strong anisotropic observed in vacancy-deficient 2D Ga₂O₃highlight the insights into defect engineering strategies for next-generation wide-bandgap semiconductors.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145092286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultraviolet saturable absorption behavior of black phosphorus.","authors":"Yan Sun, Zhenyu Zhao, Zihan Ren, Fang Zhang, Fei Xing, Dan Yu","doi":"10.1088/1361-6528/ae0f21","DOIUrl":"https://doi.org/10.1088/1361-6528/ae0f21","url":null,"abstract":"<p><p>Black phosphorus (BP) has attracted much attention due to its distinctive band-gap properties and strong light-matter interaction, which make it a promising nonlinear optical material. In this study, BP nanosheets were exfoliated successfully utilizing the liquid phase exfoliation technique. Using an open-aperture Z-scan method, the broadband nonlinear absorption characteristics of BP nanosheets were studied. Under 355 nm excitation, the BP nanosheets demonstrated pronounced saturation absorption properties, with the maximum normalized transmittance of the wave peaks reaching 149% at an excitation energy of 7 μJ. Moreover, the threshold for nonlinear absorption behavior in BP nanosheets at 355 nm was approximately 0.023 GW/cm².The results showed that BP nanosheets possess strong saturable absorption properties in ultraviolet waveband. The saturable absorption characteristics of BP nanosheets make it possible to apply it in ultraviolet laser as saturable absorber, which can broaden its application in ultraviolet nonlinear optics.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145225571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring niobium pentoxide nanoparticles via distinct chemical routes: structural characterization and antibacterial evaluation.","authors":"Muhammad Usman Khalid, Vidas Pakštas, Arunas Stirke, Monika Kirsnytė, Wanessa de Cássia Martins Antunes de Melo","doi":"10.1088/1361-6528/ae0f20","DOIUrl":"https://doi.org/10.1088/1361-6528/ae0f20","url":null,"abstract":"<p><p>Niobium pentoxide (Nb₂O₅) nanoparticles hold promise for biomedical applications owing to their tunable physicochemical properties. Here, Nb₂O₅ nanoparticles were synthesized via two chemical routes: (i) direct dissolution of Nb₂O₅ in hydrofluoric acid (HF), and (ii) reaction of ammonium niobate(V) oxalate hydrate with hydrogen peroxide (H₂O₂). Characterization by X-ray diffraction, electron microscopy, and dynamic light scattering confirmed route-dependent differences in crystallinity, size, and dispersion. Antibacterial assays against Escherichia coli revealed highest efficacy for H₂O₂-derived nanoparticles (12 g/L), attributed to their ultra-small crystallites (~4.5 nm), monodispersity (PDI = 0.118), and good colloidal stability. In the HF route, the 5 g/L sample also showed strong antibacterial activity, likely due to increased particle concentration despite larger size distribution. Mechanistic studies demonstrated that bactericidal effects correlated with enhanced reactive oxygen species (ROS) generation, particularly in H₂O₂-synthesized nanoparticles with oxygen-defect structures. ICP-MS confirmed low but detectable Nb ion release, indicating that ROS production, rather than ion leaching, was the dominant antibacterial mechanism. These findings highlight the importance of synthesis route and precursor concentration in tailoring the antibacterial performance of Nb₂O₅ nanoparticles, supporting their potential as effective nanomaterials for biomedical applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145225663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of atomic distortion distributions in thin film and invisible substrate by FT-moiré inversion method.","authors":"Qingcui Huang, Qinghua Wang, Fumio Komori","doi":"10.1088/1361-6528/ae09b6","DOIUrl":"10.1088/1361-6528/ae09b6","url":null,"abstract":"<p><p>This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe₂N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145125342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable alleviation of cadmium toxicity in soybean through biochar and silicon oxide nanoparticles: Insights into photosynthesis and physiological responses.","authors":"Ferhat Ozturk, Vishnu D Rajput, Mohammad Faizan","doi":"10.1088/1361-6528/ae0d96","DOIUrl":"https://doi.org/10.1088/1361-6528/ae0d96","url":null,"abstract":"<p><p>Cadmium (Cd) toxicity in soil presents a major threat to global agricultural sustainability by adversely affecting plant growth and productivity. This study aimed to evaluate the synergistic effects of silicon dioxide nanoparticles (SiO 2 NPs) and biochar nanoparticles (BC NPs) in mitigating Cd-induced stress in Glycine max (soybean). Soybean seeds were surface-sterilized and germinated in Petri plats, and then transferred to pots (five replicates per treatment). At 15 days after transplanting (DAT), Cd stress (150 µM CdCl 2 ) was applied via soil, followed by foliar applications of BC NPs (50 ppm) and SiO 2 NPs (100 ppm) from 25 to 30 DAT, while control plants received distilled water. Cadmium stress significantly reduced growth parameters, photosynthetic efficiency, protein content, osmolyte accumulation, and uptake of essential nutrient, while increasing oxidative stress biomarkers such as hydrogen peroxide (H 2 O 2 ) and malondialdehyde (MDA). In contrast, the application of BC NPs and SiO 2 NPs, both individually and in combination, markedly improved plant growth, photosynthetic performance, protein content, soluble sugar, starch, sucrose, proline levels, and antioxidant enzyme activities.Moreover, NPs treatments enhanced the uptake of essential nutrients including iron (Fe), manganese (Mn), phosphorus (P), potassium (K), nitrogen (N) while reducing Cd accumulation in the leaves. Notably, the combined application of BC NPs and SiO 2 NPs exhibited the most pronounced protective effects across all measured physiological, biochemical, and nutritional parameters.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145200367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reversing the doping paradox: graphene spatial nesting enhances intergranular connectivity while inducing minimal transition temperature degradation in MgB₂superconductors.","authors":"Wenbin Jin, Fang Cheng, Nan Liu, Ruxin Song, Qingwen Meng, Zongqing Ma, Qiong Wu, Hongliang Ge","doi":"10.1088/1361-6528/ae0d97","DOIUrl":"https://doi.org/10.1088/1361-6528/ae0d97","url":null,"abstract":"<p><p>This study systematically investigates the influence of graphene (Gr) doping, pre-treatment, Cu co-doping, and sintering temperature on the microstructure and superconducting properties of MgB₂. Key findings reveal that Gr pre-treatment enhances dispersion homogeneity but only minimally affects coated boron powders. Low-temperature sintering with trace Cu facilitates finer grain control; however, Gr shifts the dominant reaction mechanism to the solid-solid (Mg-B) pathway, hindering Mg diffusion and causing incomplete reactions, even at elevated temperatures. System equilibrium necessitates prolonged low-temperature treatment or optimized doping. Crucially, the sample with 5 wt.% Gr + 5 wt.% Cu sintered at 800 °C shows a reduction in the full width at half maximum (FWHM) of the phonon density of states (PDOS) peak. This reduction arises from tensile strain induced by high-quality Gr, which counteracts residual stress and lattice distortion caused by carbon substitution, as indicated by mitigated Tc degradation in Raman and Tc measurements. Contrary to conventional understanding, we propose a primary enhancement mechanism involving the co-growth of MgB₂, Mg-Cu alloy, and amorphous phases on Gr micro-substrates. This co-growth fosters a dense, interconnected, and spatially nested architecture within the MgB₂ matrix, overcoming doping-induced poor intergranular connectivity and preventing low-field performance suppression.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145200377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.","authors":"Hyunseok Son, Kyumin Sim, Hae Chul Hwang, Hamin Park","doi":"10.1088/1361-6528/ae08bf","DOIUrl":"10.1088/1361-6528/ae08bf","url":null,"abstract":"<p><p>We investigated the effects of hydrogen annealing on the electrical properties and reliability of NAND flash memory capacitors featuring an oxide-nitride-oxide charge-trap dielectric stack. A thin interfacial SiO<i>_x</i>N<i>_y</i>transition layer, inherently formed between SiO₂and Si₃N₄during processing, was analyzed for compositional and structural changes across annealing temperatures ranging from 300 °C to 500 °C. Key electrical characteristics, including capacitance-voltage behavior, programming speed, data retention, and endurance, were evaluated as a function of annealing temperature. The results demonstrate that annealing in forming gas at temperatures between 400 °C-450 °C optimally enhances device performance by increasing charge injection, reducing interface trap density, and stabilizing the memory window. Structural analysis by transmission electron microscopy and electron energy-loss spectroscopy revealed improved passivation of interface traps and the formation of deep trap states in the nitride, which together contribute to improved charge retention and reduced charge loss through trap-assisted tunneling.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145086497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The characteristics of graphene-based photoelectric device under extreme conditions.","authors":"Shuai Huang, Jiapeng Zhen, Kehong Lv, Jing Qiu, Guanjun Liu","doi":"10.1088/1361-6528/ae08be","DOIUrl":"10.1088/1361-6528/ae08be","url":null,"abstract":"<p><p>In the face of the urgent need for ultra-sensitive detection in the new generation of complex photoelectric environment, traditional silicon-based detectors cannot achieve high-sensitivity detection in micro-size and extreme environments. Carbon-based materials are expected to achieve high-sensitivity detection in complex environments due to their high electron mobility and temperature stability. Based on the above problems, this paper studies the photoelectric working mechanism by analyzing the photoelectron distribution of carbon-based detectors. Subsequently, it was verified by experiments. The graphene band gap was opened under high pressure conditions (6.4 Gpa), and<i>in-situ</i>detection was carried out by Raman and ultraviolet absorption spectra. Thereafter, a stable wide band gap carbon-based semiconductor photodetector was successfully fabricated. Eventually, its photoelectric detection performance was tested under various temperature conditions (420-80 K). This process confirmed the operational stability of the carbon-based photodetector in extreme temperature environments and provided a valuable reference for the development of a new generation of detectors suitable for extreme conditions.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145086549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}