用傅里叶变换反演法分析薄膜和不可见衬底中的原子畸变分布。

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Qingcui Huang, Qinghua Wang, Fumio Komori
{"title":"用傅里叶变换反演法分析薄膜和不可见衬底中的原子畸变分布。","authors":"Qingcui Huang, Qinghua Wang, Fumio Komori","doi":"10.1088/1361-6528/ae09b6","DOIUrl":null,"url":null,"abstract":"<p><p>This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe<sub>2</sub>N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of atomic distortion distributions in thin film and invisible substrate by FT-moiré inversion method.\",\"authors\":\"Qingcui Huang, Qinghua Wang, Fumio Komori\",\"doi\":\"10.1088/1361-6528/ae09b6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe<sub>2</sub>N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.</p>\",\"PeriodicalId\":19035,\"journal\":{\"name\":\"Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6528/ae09b6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae09b6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本研究提出了傅里叶变换反演方法,用于精确测量和分析薄膜和不可见衬底中的原子阵列。在扫描隧道显微镜下,不能直接观察到结构底部的原子阵列,只能看到它们干涉产生的波纹图案。为了克服这一限制,傅里叶变换反演方法检索了特征参数,并比较了多层原子结构中所有莫尔条纹干涉组合的可能性,识别出正确的两个原子种类,然后对它们进行分析,从而获得潜在不可见原子排列的周期特征。验证了傅里叶变换反演方法的有效性和准确性。此外,成功地应用ft - moir反演方法分析了Fe2N-Cu(111)原子结构中薄膜原子和不可见衬底原子的畸变分布。该方法可以探测到STM无法看到的结构中的潜在原子特征,并可以推广到薄膜和衬底的其他原子结构研究中,通过精确检测晶格缺陷和调整应变场来改善光电和力学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of atomic distortion distributions in thin film and invisible substrate by FT-moiré inversion method.

This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe2N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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