{"title":"用傅里叶变换反演法分析薄膜和不可见衬底中的原子畸变分布。","authors":"Qingcui Huang, Qinghua Wang, Fumio Komori","doi":"10.1088/1361-6528/ae09b6","DOIUrl":null,"url":null,"abstract":"<p><p>This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe<sub>2</sub>N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of atomic distortion distributions in thin film and invisible substrate by FT-moiré inversion method.\",\"authors\":\"Qingcui Huang, Qinghua Wang, Fumio Komori\",\"doi\":\"10.1088/1361-6528/ae09b6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe<sub>2</sub>N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.</p>\",\"PeriodicalId\":19035,\"journal\":{\"name\":\"Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6528/ae09b6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae09b6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Analysis of atomic distortion distributions in thin film and invisible substrate by FT-moiré inversion method.
This study proposes the FT-moiré inversion method for accurately measuring and analyzing the atomic arrays in thin films and invisible substrates. The atomic arrays at the bottom of the structure cannot be directly observed in a scanning tunneling microscope (STM), but only the moiré pattern generated by their interference is visible. To overcome this limitation, the FT-moiré inversion method retrieves the characteristic parameters and compares the possibilities of all the interference combinations of moiré patterns in multilayer atomic structures, identifies the correct two atomic species, and then analyzes them to obtain the periodic characteristics of the potentially invisible atomic arrangements. The validity and accuracy of the FT-moiré inversion method are verified. Moreover, the FT-moiré inversion method is successfully applied to analyze the distortion distributions of thin-film atoms and invisible substrate atoms in the Fe2N-Cu(111) atomic structure. This method can probe underlying atomic features in structures that are not visible with STM and can be generalized to other atomic structure studies of thin films and substrates to achieve improved optoelectronic and mechanical properties through precise detection of lattice defects and tuning of strain fields.
期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.