基于ono的闪存电容器中温度诱导的界面混频和陷阱调制。

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Hyunseok Son, Kyumin Sim, Hae Chul Hwang, Hamin Park
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引用次数: 0

摘要

我们研究了氢退火对具有氧化物-氮化物-氧化物电荷阱电介质堆叠的NAND闪存电容器的电学性能和可靠性的影响。在加工过程中,SiO2和Si3N4之间形成了一层薄薄的界面SiOxNy过渡层,分析了在300-500℃退火温度下的成分和结构变化。关键的电气特性-包括电容电压行为,编程速度,数据保留和耐久性-被评估为退火温度的函数。结果表明,在400-450 °C形成气体中退火可以通过增加电荷注入、降低界面陷阱密度和稳定记忆窗口来最佳地提高器件性能。通过透射电子显微镜和电子能量损失能谱分析发现,界面阱钝化和深阱态的形成改善了氮化物中电荷的保留(抑制热辐射),并通过阱辅助隧道效应降低了电荷损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.

We investigated the effects of hydrogen annealing on the electrical properties and reliability of NAND flash memory capacitors featuring an oxide-nitride-oxide charge-trap dielectric stack. A thin interfacial SiOxNytransition layer, inherently formed between SiO2and Si3N4during processing, was analyzed for compositional and structural changes across annealing temperatures ranging from 300 °C to 500 °C. Key electrical characteristics, including capacitance-voltage behavior, programming speed, data retention, and endurance, were evaluated as a function of annealing temperature. The results demonstrate that annealing in forming gas at temperatures between 400 °C-450 °C optimally enhances device performance by increasing charge injection, reducing interface trap density, and stabilizing the memory window. Structural analysis by transmission electron microscopy and electron energy-loss spectroscopy revealed improved passivation of interface traps and the formation of deep trap states in the nitride, which together contribute to improved charge retention and reduced charge loss through trap-assisted tunneling.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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