Hyunseok Son, Kyumin Sim, Hae Chul Hwang, Hamin Park
{"title":"基于ono的闪存电容器中温度诱导的界面混频和陷阱调制。","authors":"Hyunseok Son, Kyumin Sim, Hae Chul Hwang, Hamin Park","doi":"10.1088/1361-6528/ae08bf","DOIUrl":null,"url":null,"abstract":"<p><p>We investigated the effects of hydrogen annealing on the electrical properties and reliability of NAND flash memory capacitors featuring an oxide-nitride-oxide charge-trap dielectric stack. A thin interfacial SiO<i><sub>x</sub></i>N<i><sub>y</sub></i>transition layer, inherently formed between SiO<sub>2</sub>and Si<sub>3</sub>N<sub>4</sub>during processing, was analyzed for compositional and structural changes across annealing temperatures ranging from 300 °C to 500 °C. Key electrical characteristics, including capacitance-voltage behavior, programming speed, data retention, and endurance, were evaluated as a function of annealing temperature. The results demonstrate that annealing in forming gas at temperatures between 400 °C-450 °C optimally enhances device performance by increasing charge injection, reducing interface trap density, and stabilizing the memory window. Structural analysis by transmission electron microscopy and electron energy-loss spectroscopy revealed improved passivation of interface traps and the formation of deep trap states in the nitride, which together contribute to improved charge retention and reduced charge loss through trap-assisted tunneling.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.\",\"authors\":\"Hyunseok Son, Kyumin Sim, Hae Chul Hwang, Hamin Park\",\"doi\":\"10.1088/1361-6528/ae08bf\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>We investigated the effects of hydrogen annealing on the electrical properties and reliability of NAND flash memory capacitors featuring an oxide-nitride-oxide charge-trap dielectric stack. A thin interfacial SiO<i><sub>x</sub></i>N<i><sub>y</sub></i>transition layer, inherently formed between SiO<sub>2</sub>and Si<sub>3</sub>N<sub>4</sub>during processing, was analyzed for compositional and structural changes across annealing temperatures ranging from 300 °C to 500 °C. Key electrical characteristics, including capacitance-voltage behavior, programming speed, data retention, and endurance, were evaluated as a function of annealing temperature. The results demonstrate that annealing in forming gas at temperatures between 400 °C-450 °C optimally enhances device performance by increasing charge injection, reducing interface trap density, and stabilizing the memory window. Structural analysis by transmission electron microscopy and electron energy-loss spectroscopy revealed improved passivation of interface traps and the formation of deep trap states in the nitride, which together contribute to improved charge retention and reduced charge loss through trap-assisted tunneling.</p>\",\"PeriodicalId\":19035,\"journal\":{\"name\":\"Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6528/ae08bf\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae08bf","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.
We investigated the effects of hydrogen annealing on the electrical properties and reliability of NAND flash memory capacitors featuring an oxide-nitride-oxide charge-trap dielectric stack. A thin interfacial SiOxNytransition layer, inherently formed between SiO2and Si3N4during processing, was analyzed for compositional and structural changes across annealing temperatures ranging from 300 °C to 500 °C. Key electrical characteristics, including capacitance-voltage behavior, programming speed, data retention, and endurance, were evaluated as a function of annealing temperature. The results demonstrate that annealing in forming gas at temperatures between 400 °C-450 °C optimally enhances device performance by increasing charge injection, reducing interface trap density, and stabilizing the memory window. Structural analysis by transmission electron microscopy and electron energy-loss spectroscopy revealed improved passivation of interface traps and the formation of deep trap states in the nitride, which together contribute to improved charge retention and reduced charge loss through trap-assisted tunneling.
期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.